KR100796544B1 - 웨이퍼의 매엽식 에칭 방법 - Google Patents
웨이퍼의 매엽식 에칭 방법 Download PDFInfo
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- KR100796544B1 KR100796544B1 KR1020060065832A KR20060065832A KR100796544B1 KR 100796544 B1 KR100796544 B1 KR 100796544B1 KR 1020060065832 A KR1020060065832 A KR 1020060065832A KR 20060065832 A KR20060065832 A KR 20060065832A KR 100796544 B1 KR100796544 B1 KR 100796544B1
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- Prior art keywords
- wafer
- etchant
- supplied
- etching
- end portion
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000005530 etching Methods 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 192
- 230000000052 comparative effect Effects 0.000 description 20
- 239000007789 gas Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000035611 feeding Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 101100441413 Caenorhabditis elegans cup-15 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
Description
Claims (5)
- 웨이퍼가 홀딩된 상태에서 평탄화된 정면 및 배면을 갖는 단일 웨이퍼의 정면에 에천트를 공급하고, 상기 웨이퍼를 수평으로 회전시킴으로써 생성된 원심력에 의해 웨이퍼 정면 및 웨이퍼 정면측 말단부를 에칭하는 웨이퍼의 매엽식 에칭 방법으로서,웨이퍼의 정면 상에 에천트를 2회 이상 간헐적으로 공급하는 단계를 포함하고,상기 간헐적으로 공급하는 단계는 하나의 프로세스를 위한 에천트가 공급된 후 에천트의 공급을 중단하는 단계; 및 상기 공급된 에천트가 웨이퍼 말단부로부터 흘러내린 후 다음 프로세스를 위한 에천트를 공급하는 단계를 포함하고,에칭 동안 상기 웨이퍼 배면과 상기 배면측 말단부 사이의 위치로부터 배면측 말단부를 향해서 가스가 공급됨으로써 상기 에천트가 상기 웨이퍼 배면으로 흐르는 것을 방지하는, 웨이퍼의 매엽식 에칭 방법.
- 제 1 항에 있어서,상기 웨이퍼는 챔퍼링된 말단부를 갖는 실리콘 웨이퍼인, 웨이퍼의 매엽식 에칭 방법.
- 제 1 항에 있어서,상기 웨이퍼는 척을 이용하여 웨이퍼 배면을 진공 흡인함으로써 홀딩되는, 웨이퍼의 매엽식 에칭 방법.
- 삭제
- 제 1 항에 있어서,상기 에천트는 산성 에칭 액체인, 웨이퍼의 매엽식 에칭 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005208803A JP4438709B2 (ja) | 2005-07-19 | 2005-07-19 | ウェーハの枚葉式エッチング方法 |
JPJP-P-2005-00208803 | 2005-07-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070011111A KR20070011111A (ko) | 2007-01-24 |
KR100796544B1 true KR100796544B1 (ko) | 2008-01-21 |
Family
ID=37192630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060065832A KR100796544B1 (ko) | 2005-07-19 | 2006-07-13 | 웨이퍼의 매엽식 에칭 방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20070161247A1 (ko) |
EP (1) | EP1746639A1 (ko) |
JP (1) | JP4438709B2 (ko) |
KR (1) | KR100796544B1 (ko) |
CN (1) | CN100530557C (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102527582A (zh) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | 一种用于清洗圆片的喷头及其方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115728A (ja) * | 2005-10-18 | 2007-05-10 | Sumco Corp | ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法 |
JP2008218545A (ja) * | 2007-03-01 | 2008-09-18 | Sumco Corp | ウェーハの枚葉式エッチング装置 |
TWI430348B (zh) * | 2008-03-31 | 2014-03-11 | Memc Electronic Materials | 蝕刻矽晶圓邊緣的方法 |
DE102008037404A1 (de) * | 2008-09-30 | 2010-04-01 | Schott Solar Ag | Verfahren zur chemischen Behandlung eines Substrats |
WO2010059556A1 (en) * | 2008-11-19 | 2010-05-27 | Memc Electronic Materials, Inc. | Method and system for stripping the edge of a semiconductor wafer |
CN103187242B (zh) * | 2011-12-31 | 2016-08-24 | 中芯国际集成电路制造(上海)有限公司 | 提高晶圆的刻蚀cd均匀度的装置和方法 |
US9246043B2 (en) | 2012-02-01 | 2016-01-26 | Mitsubishi Electric Corporation | Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device |
JPWO2013114589A1 (ja) * | 2012-02-01 | 2015-05-11 | 三菱電機株式会社 | 光起電力装置の製造方法および光起電力装置の製造装置 |
US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
CN103805997B (zh) * | 2012-11-12 | 2016-04-06 | 茂迪股份有限公司 | 湿式蚀刻方法与基板承载装置 |
JP2015213189A (ja) * | 2015-07-09 | 2015-11-26 | 三菱電機株式会社 | 光起電力装置の製造方法 |
CN106971958A (zh) * | 2016-01-14 | 2017-07-21 | 弘塑科技股份有限公司 | 单晶圆湿式处理装置 |
US10872788B2 (en) * | 2018-11-26 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet etch apparatus and method for using the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001284315A (ja) * | 2000-03-30 | 2001-10-12 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748484B2 (ja) * | 1987-11-18 | 1995-05-24 | 富士通株式会社 | エッチング方法 |
JPH0810686B2 (ja) * | 1990-09-14 | 1996-01-31 | 株式会社東芝 | 半導体基板エッチング処理装置 |
JPH1092712A (ja) * | 1996-09-10 | 1998-04-10 | Sharp Corp | 半導体製造装置 |
JPH11289002A (ja) | 1998-04-03 | 1999-10-19 | Toshiba Microelectronics Corp | 枚葉処理機構 |
JP3869566B2 (ja) * | 1998-11-13 | 2007-01-17 | 三菱電機株式会社 | フォトレジスト膜除去方法および装置 |
US6951221B2 (en) * | 2000-09-22 | 2005-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
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2005
- 2005-07-19 JP JP2005208803A patent/JP4438709B2/ja not_active Expired - Fee Related
-
2006
- 2006-07-13 KR KR1020060065832A patent/KR100796544B1/ko active IP Right Grant
- 2006-07-13 EP EP06014582A patent/EP1746639A1/en not_active Withdrawn
- 2006-07-19 US US11/458,489 patent/US20070161247A1/en not_active Abandoned
- 2006-07-19 CN CNB2006101061258A patent/CN100530557C/zh active Active
-
2008
- 2008-10-28 US US12/259,940 patent/US20090117749A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001284315A (ja) * | 2000-03-30 | 2001-10-12 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102527582A (zh) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | 一种用于清洗圆片的喷头及其方法 |
CN102527582B (zh) * | 2010-12-08 | 2016-06-15 | 无锡华润上华科技有限公司 | 一种用于清洗圆片的喷头及其方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4438709B2 (ja) | 2010-03-24 |
US20070161247A1 (en) | 2007-07-12 |
KR20070011111A (ko) | 2007-01-24 |
CN100530557C (zh) | 2009-08-19 |
US20090117749A1 (en) | 2009-05-07 |
CN1937179A (zh) | 2007-03-28 |
JP2007027492A (ja) | 2007-02-01 |
EP1746639A1 (en) | 2007-01-24 |
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