MX2019001200A - Una capa absorbente de luz y un dispositivo fotovoltaico que incluye una capa absorbente de luz. - Google Patents
Una capa absorbente de luz y un dispositivo fotovoltaico que incluye una capa absorbente de luz.Info
- Publication number
- MX2019001200A MX2019001200A MX2019001200A MX2019001200A MX2019001200A MX 2019001200 A MX2019001200 A MX 2019001200A MX 2019001200 A MX2019001200 A MX 2019001200A MX 2019001200 A MX2019001200 A MX 2019001200A MX 2019001200 A MX2019001200 A MX 2019001200A
- Authority
- MX
- Mexico
- Prior art keywords
- absorbing layer
- light absorbing
- photovoltaic device
- grains
- device including
- Prior art date
Links
- 239000004020 conductor Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 1
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic System (C, Si, Ge, Sn, Pb) with or without impurities, e.g. doping materials
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- H01L31/0264—Inorganic materials
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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Abstract
La presente invención se refiere a una capa absorbente de luz (1a) para un dispositivo fotovoltaico, que comprende una pluralidad de granos (2) de un material semiconductor dopado y un conductor de carga (3) hecho de un material conductor de carga en contacto físico con los granos; los granos están parcialmente cubiertos con el conductor de carga (3), de modo que se forma una pluralidad de uniones (4) entre los granos y el conductor de carga; la presente invención también se refiere a un dispositivo fotovoltaico que comprende la capa absorbente de luz (1a).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1651090 | 2016-07-29 | ||
SE1651521A SE540184C2 (en) | 2016-07-29 | 2016-11-21 | A light absorbing layer and a photovoltaic device including a light absorbing layer |
PCT/SE2017/050016 WO2018021952A1 (en) | 2016-07-29 | 2017-01-10 | A light absorbing layer and a photovoltaic device including a light absorbing layer |
Publications (1)
Publication Number | Publication Date |
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MX2019001200A true MX2019001200A (es) | 2019-06-10 |
Family
ID=61236531
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2019001200A MX2019001200A (es) | 2016-07-29 | 2017-01-10 | Una capa absorbente de luz y un dispositivo fotovoltaico que incluye una capa absorbente de luz. |
MX2019001203A MX2019001203A (es) | 2016-07-29 | 2017-07-12 | Un metodo para producir un dispositivo fotovoltaico. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2019001203A MX2019001203A (es) | 2016-07-29 | 2017-07-12 | Un metodo para producir un dispositivo fotovoltaico. |
Country Status (14)
Country | Link |
---|---|
US (3) | US10998459B2 (es) |
EP (2) | EP3491680B1 (es) |
JP (3) | JP6635357B2 (es) |
KR (3) | KR102033273B1 (es) |
CN (3) | CN109496370B (es) |
AU (2) | AU2017302388B2 (es) |
BR (1) | BR112019001351B1 (es) |
CA (2) | CA3022237C (es) |
ES (3) | ES2884324T3 (es) |
MX (2) | MX2019001200A (es) |
SA (2) | SA518400512B1 (es) |
SE (2) | SE540184C2 (es) |
TW (1) | TWI715698B (es) |
ZA (2) | ZA201808012B (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2901323T3 (es) * | 2019-07-26 | 2022-03-22 | Meyer Burger Germany Gmbh | Dispositivo fotovoltaico y método para fabricar el mismo |
CN116998239A (zh) * | 2021-12-23 | 2023-11-03 | 宁德时代新能源科技股份有限公司 | A/m/x晶体材料、光伏器件及其制备方法 |
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