MX2016016024A - Metodo apra refrescar memoria de acceso aleatorio, dinamica y un sistema de computadora. - Google Patents
Metodo apra refrescar memoria de acceso aleatorio, dinamica y un sistema de computadora.Info
- Publication number
- MX2016016024A MX2016016024A MX2016016024A MX2016016024A MX2016016024A MX 2016016024 A MX2016016024 A MX 2016016024A MX 2016016024 A MX2016016024 A MX 2016016024A MX 2016016024 A MX2016016024 A MX 2016016024A MX 2016016024 A MX2016016024 A MX 2016016024A
- Authority
- MX
- Mexico
- Prior art keywords
- refreshing
- unit
- dram
- information
- payment
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 8
- 241000700605 Viruses Species 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/10—Address translation
- G06F12/1009—Address translation using page tables, e.g. page table structures
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
- G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
- G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0662—Virtualisation aspects
- G06F3/0665—Virtualisation aspects at area level, e.g. provisioning of virtual or logical volumes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40622—Partial refresh of memory arrays
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/15—Use in a specific computing environment
- G06F2212/152—Virtualized environment, e.g. logically partitioned system
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/65—Details of virtual memory and virtual address translation
- G06F2212/657—Virtual address space management
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Mobile Radio Communication Systems (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Se proporciona un método para refrescar una memoria de acceso aleatorio, dinámica DRAM y un sistema de computadora. Cuando se adquiere una dirección de una unidad de refresco en una DRAM y la información de refresco de la unidad de refresco, la dirección de la unidad de refresco y la información de refresco de la unidad de refresco se encapsulan como una solicitud de acceso DRAM, donde la unidad de refresco es espacio de almacenamiento en el cual se lleva a cabo una vez el refresco en la DRAM, y la información de refresco de la unidad de refresco incluye un ciclo de refresco de la unidad de refresco. Entonces, la dirección y la información de refresco de la unidad de refresco se escriben en espacio de datos de refresco utilizando la solicitud de acceso DRAM, donde el espacio de datos de refresco es espacio de almacenamiento que se pre-establece en la DRAM y que se utiliza para almacenar una dirección de al menos una unidad de refresco e información de refresco de al menos una unidad de refresco.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410253514.8A CN105280215B (zh) | 2014-06-09 | 2014-06-09 | 动态随机存取存储器dram的刷新方法、设备以及系统 |
PCT/CN2015/080989 WO2015188732A1 (zh) | 2014-06-09 | 2015-06-08 | 动态随机存取存储器dram的刷新方法、设备以及系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2016016024A true MX2016016024A (es) | 2017-03-28 |
MX357812B MX357812B (es) | 2018-07-25 |
Family
ID=54832906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2016016024A MX357812B (es) | 2014-06-09 | 2015-06-08 | Metodo apra refrescar memoria de acceso aleatorio, dinamica y un sistema de computadora. |
Country Status (10)
Country | Link |
---|---|
US (1) | US10007599B2 (es) |
EP (1) | EP3142120B1 (es) |
JP (1) | JP6429258B2 (es) |
KR (2) | KR20160148700A (es) |
CN (2) | CN105280215B (es) |
CA (1) | CA2949282C (es) |
MX (1) | MX357812B (es) |
RU (1) | RU2665883C2 (es) |
SG (1) | SG11201609766RA (es) |
WO (1) | WO2015188732A1 (es) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105552735A (zh) * | 2016-01-29 | 2016-05-04 | 成都绿迪科技有限公司 | 一种开关柜 |
CN106297890A (zh) * | 2016-07-21 | 2017-01-04 | 浪潮电子信息产业股份有限公司 | 一种内存目标刷新参数的确定方法及装置 |
GB2560968B (en) * | 2017-03-30 | 2020-07-29 | Advanced Risc Mach Ltd | Control of refresh operation for memory regions |
SG11201908904TA (en) | 2017-04-14 | 2019-10-30 | Huawei Tech Co Ltd | Memory refresh technology and computer system |
BR112019021554B1 (pt) * | 2017-04-14 | 2024-02-27 | Huawei Technologies Co., Ltd | Método de renovação de memória, controlador de memória, aparelho de renovação de memória, sistema de computador e meio de armazenamento legível por computador |
TWI639920B (zh) * | 2017-11-17 | 2018-11-01 | 財團法人工業技術研究院 | 記憶體控制器及其控制方法以及記憶體及其控制方法 |
CN108710584B (zh) * | 2018-05-22 | 2021-08-31 | 郑州云海信息技术有限公司 | 一种提高tlb刷新效率的方法 |
US10878880B2 (en) * | 2018-09-20 | 2020-12-29 | Qualcomm Incorporated | Selective volatile memory refresh via memory-side data valid indication |
WO2020097868A1 (zh) * | 2018-11-15 | 2020-05-22 | 华为技术有限公司 | 控制从动态随机存储器中预取数据的方法、装置及系统 |
KR20200079885A (ko) | 2018-12-26 | 2020-07-06 | 한양대학교 산학협력단 | 리플레시 오버헤드를 줄일 수 있는 메모리 장치 및 이의 리플레시 방법 |
CN110187835B (zh) * | 2019-05-24 | 2023-02-03 | 北京百度网讯科技有限公司 | 用于管理访问请求的方法、装置、设备和存储介质 |
CN111880732A (zh) * | 2020-07-18 | 2020-11-03 | Oppo广东移动通信有限公司 | 一种闪存数据刷新方法及装置 |
CN115148248B (zh) * | 2022-09-06 | 2022-11-08 | 北京奎芯集成电路设计有限公司 | 基于深度学习的dram刷新方法和装置 |
CN117806809A (zh) * | 2022-09-26 | 2024-04-02 | 华为技术有限公司 | 内存刷新方法和装置 |
CN117935874A (zh) * | 2022-10-17 | 2024-04-26 | 长鑫存储技术有限公司 | 内存刷新参数确定、内存刷新方法、装置、介质和设备 |
KR102631193B1 (ko) * | 2023-10-23 | 2024-01-31 | 주식회사 뷰웍스 | 방사선 검출기의 리프레시 장치 및 방법 |
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2014
- 2014-06-09 CN CN201410253514.8A patent/CN105280215B/zh active Active
- 2014-06-09 CN CN201711433354.5A patent/CN108231109B/zh active Active
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2015
- 2015-06-08 SG SG11201609766RA patent/SG11201609766RA/en unknown
- 2015-06-08 WO PCT/CN2015/080989 patent/WO2015188732A1/zh active Application Filing
- 2015-06-08 MX MX2016016024A patent/MX357812B/es active IP Right Grant
- 2015-06-08 RU RU2016151308A patent/RU2665883C2/ru active
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- 2015-06-08 JP JP2016572231A patent/JP6429258B2/ja active Active
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Also Published As
Publication number | Publication date |
---|---|
CN105280215B (zh) | 2018-01-23 |
KR102048762B1 (ko) | 2019-11-26 |
US10007599B2 (en) | 2018-06-26 |
KR20180137613A (ko) | 2018-12-27 |
CA2949282A1 (en) | 2015-12-17 |
RU2016151308A (ru) | 2018-07-17 |
RU2016151308A3 (es) | 2018-07-17 |
CN108231109A (zh) | 2018-06-29 |
MX357812B (es) | 2018-07-25 |
RU2665883C2 (ru) | 2018-09-04 |
WO2015188732A1 (zh) | 2015-12-17 |
EP3142120B1 (en) | 2019-09-11 |
JP6429258B2 (ja) | 2018-11-28 |
CN105280215A (zh) | 2016-01-27 |
SG11201609766RA (en) | 2016-12-29 |
JP2017521808A (ja) | 2017-08-03 |
EP3142120A4 (en) | 2017-04-26 |
CN108231109B (zh) | 2021-01-29 |
US20170091087A1 (en) | 2017-03-30 |
EP3142120A1 (en) | 2017-03-15 |
CA2949282C (en) | 2018-10-23 |
KR20160148700A (ko) | 2016-12-26 |
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