MX2008012457A - Medio de formacion de la membrana de silicona microcristalina y celula solar. - Google Patents

Medio de formacion de la membrana de silicona microcristalina y celula solar.

Info

Publication number
MX2008012457A
MX2008012457A MX2008012457A MX2008012457A MX2008012457A MX 2008012457 A MX2008012457 A MX 2008012457A MX 2008012457 A MX2008012457 A MX 2008012457A MX 2008012457 A MX2008012457 A MX 2008012457A MX 2008012457 A MX2008012457 A MX 2008012457A
Authority
MX
Mexico
Prior art keywords
microcrystalline silicon
substrate
hydrogen gas
solar cell
silicon film
Prior art date
Application number
MX2008012457A
Other languages
English (en)
Inventor
Masashi Ueda
Tomoko Takagi
Norikazu Itou
Original Assignee
Ihi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihi Corp filed Critical Ihi Corp
Publication of MX2008012457A publication Critical patent/MX2008012457A/es

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

Esta invención proporciona un proceso PCVD, el cual puede formar silicio microcristalino usando el gas hidrógeno a una velocidad de flujo baja, y proporciona una célula solar de silicio microcristalino a bajo costo. El método para la formación de silicio microcristalino por el proceso PCVD se caracteriza porque comprende arreglar una pluralidad de antenas, ambos extremos de las cuales se conectan respectivamente a un suministro de energía de alta frecuencia y una tierra, dentro de un plano en una cámara de vacío para constituir una estructura de antena arreglada, colocando el sustrato para orientar la antena arreglada, elevar la temperatura del sustrato de 150 a 250ºC, introduciendo un gas mezclado que contiene gas hidrógeno y gas silano en el sistema, suministrar una energía eléctrica de alta frecuencia a la pluralidad de antenas para generar plasma, y regular la relación de velocidad de flujo de gas hidrógeno/gas silano en el intervalo de 1 a 10 para formar, sobre el sustrato, una película de silicio microcristalino de modo que la relación entre una intensidad de diafracción de Raman derivada de silicio cristalino a un número de onda de aproximadamente 520 cm-1, Ic, y una intensidad de difracción de Raman derivada de silicio no cristalino, a un número de onda de aproximadamente 480 cm-1, Ia, es decir, Ic/Ia, es de 2 a 6.
MX2008012457A 2006-03-29 2007-03-29 Medio de formacion de la membrana de silicona microcristalina y celula solar. MX2008012457A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006092481A JP5309426B2 (ja) 2006-03-29 2006-03-29 微結晶シリコン膜形成方法及び太陽電池
PCT/JP2007/000337 WO2007111028A1 (ja) 2006-03-29 2007-03-29 微結晶シリコン膜形成方法及び太陽電池

Publications (1)

Publication Number Publication Date
MX2008012457A true MX2008012457A (es) 2009-04-15

Family

ID=38540963

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2008012457A MX2008012457A (es) 2006-03-29 2007-03-29 Medio de formacion de la membrana de silicona microcristalina y celula solar.

Country Status (13)

Country Link
US (1) US20090314349A1 (es)
EP (1) EP2009140B1 (es)
JP (1) JP5309426B2 (es)
KR (1) KR20080113043A (es)
CN (2) CN102560440A (es)
AT (1) ATE500351T1 (es)
AU (1) AU2007230515B2 (es)
CA (1) CA2647595C (es)
DE (1) DE602007012850D1 (es)
MX (1) MX2008012457A (es)
MY (1) MY147131A (es)
TW (1) TW200807506A (es)
WO (1) WO2007111028A1 (es)

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EP2287920A1 (en) * 2008-10-30 2011-02-23 Mitsubishi Heavy Industries, Ltd. Photoelectric conversion apparatus and process for producing photoelectric conversion apparatus
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EP2219230A3 (en) 2009-02-17 2014-12-31 Korean Institute of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
KR101086074B1 (ko) * 2009-02-18 2011-11-23 한국생산기술연구원 실리콘 나노 와이어 제조 방법, 실리콘 나노 와이어를 포함하는 태양전지 및 태양전지의 제조 방법
JP2010258103A (ja) * 2009-04-22 2010-11-11 Serubakku:Kk 光電変換デバイスの製造方法および製造装置
JP5334664B2 (ja) * 2009-04-22 2013-11-06 株式会社 セルバック 光電変換デバイスの製造方法および光電変換デバイス
JP5382115B2 (ja) * 2009-05-19 2014-01-08 日新電機株式会社 プラズマ装置
JP4902779B2 (ja) * 2009-11-30 2012-03-21 三洋電機株式会社 光電変換装置及びその製造方法
KR101240422B1 (ko) 2010-04-30 2013-03-08 네스트 주식회사 실리콘 나노분말 제조장치 및 방법
CN101872685B (zh) * 2010-05-17 2012-06-27 河北工业大学 固态染料敏化纳米晶微晶硅复合薄膜太阳电池及其制备方法
JP5621606B2 (ja) * 2011-01-17 2014-11-12 株式会社Ihi アレイアンテナ式のｃｖｄプラズマ装置
JP5659808B2 (ja) * 2011-01-17 2015-01-28 株式会社Ihi アレイアンテナ式のｃｖｄプラズマ装置及びアレイアンテナユニット
JP5659809B2 (ja) * 2011-01-17 2015-01-28 株式会社Ihi 補助治具及びアレイアンテナ式のｃｖｄプラズマ装置
JP5609661B2 (ja) * 2011-01-17 2014-10-22 株式会社Ihi 誘導結合型の二重管電極及びアレイアンテナ式のｃｖｄプラズマ装置
JP5699644B2 (ja) * 2011-01-31 2015-04-15 株式会社Ihi アンテナ搬送体、アレイアンテナ式プラズマｃｖｄ装置、並びに、アレイアンテナ式プラズマｃｖｄ装置のアレイアンテナユニット取り付け方法
JP5533708B2 (ja) * 2011-01-31 2014-06-25 株式会社Ｉｈｉ アンテナ搬送体、アレイアンテナ式プラズマｃｖｄ装置、並びに、アレイアンテナ式プラズマｃｖｄ装置のアンテナおよび基板搬送方法
CN102634775A (zh) * 2011-02-09 2012-08-15 理想能源设备有限公司 等离子体增强化学气相沉积方法
JP5625991B2 (ja) * 2011-02-18 2014-11-19 株式会社Ihi アレイアンテナ式プラズマｃｖｄ装置のアンテナ搬送システムおよびアンテナ搬送方法
JP5773194B2 (ja) * 2011-07-11 2015-09-02 国立大学法人東京農工大学 太陽電池の製造方法
JP5765102B2 (ja) * 2011-07-12 2015-08-19 株式会社Ihi プラズマ処理装置のアンテナ構造
WO2013009505A2 (en) 2011-07-13 2013-01-17 Applied Materials, Inc. Methods of manufacturing thin film transistor devices
HUP1100436A2 (en) * 2011-08-15 2013-02-28 Ecosolifer Ag Gas flow system for using in reaction chamber
JP2013044044A (ja) * 2011-08-26 2013-03-04 Ihi Corp アレイアンテナ式のｃｖｄプラズマ装置
KR101912888B1 (ko) 2011-10-07 2018-12-28 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
JP6010981B2 (ja) * 2012-04-03 2016-10-19 株式会社Ihi プラズマ処理装置
JP5935461B2 (ja) * 2012-04-03 2016-06-15 株式会社Ihi プラズマ処理装置
JP6069874B2 (ja) * 2012-04-03 2017-02-01 株式会社Ihi プラズマ処理装置
WO2023174571A1 (de) * 2022-03-17 2023-09-21 Ccr Gmbh, Beschichtungstechnologie Verfahren und anlage zur plasmabeschichtung

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Also Published As

Publication number Publication date
TWI360164B (es) 2012-03-11
KR20080113043A (ko) 2008-12-26
MY147131A (en) 2012-10-31
US20090314349A1 (en) 2009-12-24
WO2007111028A1 (ja) 2007-10-04
AU2007230515B2 (en) 2010-11-11
TW200807506A (en) 2008-02-01
CN102560440A (zh) 2012-07-11
CN101415861A (zh) 2009-04-22
EP2009140B1 (en) 2011-03-02
JP5309426B2 (ja) 2013-10-09
DE602007012850D1 (de) 2011-04-14
JP2007262541A (ja) 2007-10-11
CA2647595C (en) 2011-12-20
AU2007230515A1 (en) 2007-10-04
CA2647595A1 (en) 2007-10-04
EP2009140A1 (en) 2008-12-31
EP2009140A4 (en) 2009-07-08
ATE500351T1 (de) 2011-03-15

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