WO2008117742A1 - 酸化亜鉛系半導体の製造方法及び酸化亜鉛系半導体の製造装置 - Google Patents

酸化亜鉛系半導体の製造方法及び酸化亜鉛系半導体の製造装置 Download PDF

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Publication number
WO2008117742A1
WO2008117742A1 PCT/JP2008/055237 JP2008055237W WO2008117742A1 WO 2008117742 A1 WO2008117742 A1 WO 2008117742A1 JP 2008055237 W JP2008055237 W JP 2008055237W WO 2008117742 A1 WO2008117742 A1 WO 2008117742A1
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WO
WIPO (PCT)
Prior art keywords
oxide semiconductor
zinc oxide
semiconductor manufacturing
supplying means
zone
Prior art date
Application number
PCT/JP2008/055237
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English (en)
French (fr)
Inventor
Akinori Koukitsu
Yoshinao Kumagai
Tetsuo Fujii
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Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008117742A1 publication Critical patent/WO2008117742A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

高品質の酸化亜鉛系半導体を容易に製造できる酸化亜鉛系半導体の製造方法及びその製造装置を提供する。る酸化亜鉛半導体の製造装置１は、塩素ガス供給手段２と、キャリアガス供給手段３と、原料ゾーン４と、加熱手段５と、水供給手段６と、キャリアガス供給手段７と、成長ゾーン８と、加熱手段９と、基板保持手段１０と、水素供給手段１１とを備えている。原料ゾーン４では、塩素ガス供給手段２から供給される塩素ガスと亜鉛とを反応させて塩化亜鉛ガスを生成する。成長ゾーン８では、原料ゾーン４から供給される塩化亜鉛と、酸素材料として水供給手段６から供給される水とを反応させて、基板保持手段１０に保持された成長基板１６上に酸化亜鉛半導体を成長させる。
PCT/JP2008/055237 2007-03-26 2008-03-21 酸化亜鉛系半導体の製造方法及び酸化亜鉛系半導体の製造装置 WO2008117742A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-079938 2007-03-26
JP2007079938A JP5052174B2 (ja) 2007-03-26 2007-03-26 酸化亜鉛系半導体の製造方法及び酸化亜鉛系半導体の製造装置

Publications (1)

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WO2008117742A1 true WO2008117742A1 (ja) 2008-10-02

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PCT/JP2008/055237 WO2008117742A1 (ja) 2007-03-26 2008-03-21 酸化亜鉛系半導体の製造方法及び酸化亜鉛系半導体の製造装置

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JP (1) JP5052174B2 (ja)
TW (1) TW200849341A (ja)
WO (1) WO2008117742A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822263B2 (en) 2008-06-30 2014-09-02 National University Corporation Tokyo University Of Agriculture And Technology Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
JP2010157574A (ja) * 2008-12-26 2010-07-15 Tokyo Univ Of Agriculture & Technology 酸化亜鉛系半導体、酸化亜鉛系半導体の製造方法および製造装置
EP2641996A1 (en) 2012-03-23 2013-09-25 Stanley Electric Co., Ltd. Method for growing magnesium-zinc-oxide-based crystal
JP2012236761A (ja) * 2012-07-06 2012-12-06 Tokyo Univ Of Agriculture & Technology ホモエピタキシャル結晶成長装置および半導体装置
JP5943345B2 (ja) * 2012-07-27 2016-07-05 東京エレクトロン株式会社 ＺｎＯ膜の製造装置及び製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05294768A (ja) * 1992-04-18 1993-11-09 Taiyo Yuden Co Ltd 透明導電膜のエッチング方法
JPH107497A (ja) * 1996-06-26 1998-01-13 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体結晶の成長方法
JP2001270799A (ja) * 2000-03-27 2001-10-02 Toyo Ink Mfg Co Ltd 酸化亜鉛薄膜およびその製造方法
JP2003243695A (ja) * 2002-02-21 2003-08-29 Sony Corp 発光素子およびその製造方法並びに表示装置
JP2004200560A (ja) * 2002-12-20 2004-07-15 Mitsubishi Heavy Ind Ltd 金属膜作製装置及び金属膜作製方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004075428A (ja) * 2002-08-13 2004-03-11 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体結晶の育成方法
JP2007016119A (ja) * 2005-07-07 2007-01-25 Tokyo Univ Of Agriculture & Technology 酸化亜鉛蛍光体の製造方法およびその利用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05294768A (ja) * 1992-04-18 1993-11-09 Taiyo Yuden Co Ltd 透明導電膜のエッチング方法
JPH107497A (ja) * 1996-06-26 1998-01-13 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体結晶の成長方法
JP2001270799A (ja) * 2000-03-27 2001-10-02 Toyo Ink Mfg Co Ltd 酸化亜鉛薄膜およびその製造方法
JP2003243695A (ja) * 2002-02-21 2003-08-29 Sony Corp 発光素子およびその製造方法並びに表示装置
JP2004200560A (ja) * 2002-12-20 2004-07-15 Mitsubishi Heavy Ind Ltd 金属膜作製装置及び金属膜作製方法

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Publication number Publication date
JP2008243987A (ja) 2008-10-09
JP5052174B2 (ja) 2012-10-17
TW200849341A (en) 2008-12-16

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