MX2007006725A - Puerta de transistor de efecto de campo organico. - Google Patents

Puerta de transistor de efecto de campo organico.

Info

Publication number
MX2007006725A
MX2007006725A MX2007006725A MX2007006725A MX2007006725A MX 2007006725 A MX2007006725 A MX 2007006725A MX 2007006725 A MX2007006725 A MX 2007006725A MX 2007006725 A MX2007006725 A MX 2007006725A MX 2007006725 A MX2007006725 A MX 2007006725A
Authority
MX
Mexico
Prior art keywords
field effect
electronic device
effect transistors
layers
different
Prior art date
Application number
MX2007006725A
Other languages
English (en)
Spanish (es)
Inventor
Walter Fix
Jurgen Ficker
Robert Blache
Original Assignee
Polyic Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polyic Gmbh & Co Kg filed Critical Polyic Gmbh & Co Kg
Publication of MX2007006725A publication Critical patent/MX2007006725A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
MX2007006725A 2004-12-10 2005-12-06 Puerta de transistor de efecto de campo organico. MX2007006725A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004059467A DE102004059467A1 (de) 2004-12-10 2004-12-10 Gatter aus organischen Feldeffekttransistoren
PCT/DE2005/002195 WO2006061000A2 (de) 2004-12-10 2005-12-06 Gatter aus organischen feldeffekttransistoren

Publications (1)

Publication Number Publication Date
MX2007006725A true MX2007006725A (es) 2007-07-25

Family

ID=36578264

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2007006725A MX2007006725A (es) 2004-12-10 2005-12-06 Puerta de transistor de efecto de campo organico.

Country Status (11)

Country Link
US (1) US20080197343A1 (enExample)
EP (1) EP1825516A2 (enExample)
JP (1) JP2008523595A (enExample)
KR (1) KR20070085953A (enExample)
CN (1) CN101076893A (enExample)
AU (1) AU2005313714A1 (enExample)
CA (1) CA2595114A1 (enExample)
DE (1) DE102004059467A1 (enExample)
MX (1) MX2007006725A (enExample)
TW (1) TWI333701B (enExample)
WO (1) WO2006061000A2 (enExample)

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CN1735871A (zh) 2003-05-16 2006-02-15 日本波技术集团有限公司 防止数字内容的未授权使用的系统
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JP5548976B2 (ja) * 2009-06-25 2014-07-16 セイコーエプソン株式会社 半導体装置
JP5558222B2 (ja) * 2010-06-18 2014-07-23 シャープ株式会社 薄膜トランジスタ基板の製造方法
CN107104188A (zh) * 2017-04-20 2017-08-29 上海幂方电子科技有限公司 有机互补型非门器件的制备方法
CN109920922B (zh) * 2017-12-12 2020-07-17 京东方科技集团股份有限公司 有机发光器件及其制备方法、显示基板、显示驱动方法
CN113130661A (zh) * 2021-04-19 2021-07-16 湖南大学 一种无屏蔽三栅晶体管器件和基于其的电阻型全摆幅反相器

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Also Published As

Publication number Publication date
EP1825516A2 (de) 2007-08-29
AU2005313714A1 (en) 2006-06-15
WO2006061000A3 (de) 2006-08-24
TW200640050A (en) 2006-11-16
KR20070085953A (ko) 2007-08-27
WO2006061000A2 (de) 2006-06-15
JP2008523595A (ja) 2008-07-03
CN101076893A (zh) 2007-11-21
CA2595114A1 (en) 2006-06-15
US20080197343A1 (en) 2008-08-21
DE102004059467A1 (de) 2006-07-20
TWI333701B (en) 2010-11-21

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