MX171541B - Dispositivo semiconductor, metodo de fabricacion del mismo, y aparato para llevar a cabo el metodo - Google Patents

Dispositivo semiconductor, metodo de fabricacion del mismo, y aparato para llevar a cabo el metodo

Info

Publication number
MX171541B
MX171541B MX014941A MX1494189A MX171541B MX 171541 B MX171541 B MX 171541B MX 014941 A MX014941 A MX 014941A MX 1494189 A MX1494189 A MX 1494189A MX 171541 B MX171541 B MX 171541B
Authority
MX
Mexico
Prior art keywords
lead wires
end portions
semiconductor device
precast
crankcase
Prior art date
Application number
MX014941A
Other languages
English (en)
Inventor
Axel Muller
Egon Seng
Siegfried Splindler
Lubomir Nicic
Gunter Gartlein
Eberhard Schmitt
Original Assignee
Itt Ind Gmbh Deutsche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt Ind Gmbh Deutsche filed Critical Itt Ind Gmbh Deutsche
Publication of MX171541B publication Critical patent/MX171541B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

La presente invención se refiere a un dispositivo semiconductor que comprende: dos cables conductores alineados a lo largo de un eje común, y que tienen porciones de extremo internas que se orientan entre sí; un cárter de plástico cilíndrico, prefabricado en forma de copa, que tiene un fondo con una abertura en el mismo en un extremo y una porción abierta en el otro extremo, pasando uno de los cables conductores a través de la abertura, y extendiéndose el otro de los cables conductores fuera de la porción superior; una matriz semiconductora prefabricada, fijada entre las porciones de extremos internos de los cables conductores, mediante lo cual un compuesto de resina fundida de plástico llena el interior del cárter y encapsula las porciones extremas internas de los cables conductores y la matriz semiconductora.
MX014941A 1988-03-05 1988-03-05 Dispositivo semiconductor, metodo de fabricacion del mismo, y aparato para llevar a cabo el metodo MX171541B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP1988/000173 WO1989008325A1 (en) 1988-03-05 1988-03-05 Semiconductor component with two connections and process and device for manufacturing it

Publications (1)

Publication Number Publication Date
MX171541B true MX171541B (es) 1993-11-04

Family

ID=8165242

Family Applications (1)

Application Number Title Priority Date Filing Date
MX014941A MX171541B (es) 1988-03-05 1988-03-05 Dispositivo semiconductor, metodo de fabricacion del mismo, y aparato para llevar a cabo el metodo

Country Status (10)

Country Link
US (1) US5023702A (es)
EP (1) EP0404760B1 (es)
KR (1) KR920005350B1 (es)
AT (1) ATE101943T1 (es)
DE (1) DE3887992D1 (es)
HK (1) HK12296A (es)
MX (1) MX171541B (es)
MY (1) MY103504A (es)
WO (1) WO1989008325A1 (es)
YU (1) YU47581B (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2747634B2 (ja) * 1992-10-09 1998-05-06 ローム株式会社 面実装型ダイオード
JP3037229B2 (ja) * 1997-10-23 2000-04-24 新潟日本電気株式会社 ベアチップ実装方法及び実装装置
WO2007056890A1 (en) * 2005-11-16 2007-05-24 Tak Cheong Electronics (Shanwei) Co., Ltd. Surface mounting plastic packaging diode and manufacture method of the same
EP2175457B1 (en) * 2008-10-09 2012-04-18 Joinset Co., Ltd Ceramic chip assembly
CN103071738B (zh) * 2013-01-07 2015-04-15 张成骏 二极管引出线校直机
EP3174088B1 (en) * 2015-11-26 2020-12-30 Siyang Grande Electronics Co., Ltd. Method of manufacturing a plastic packaged smd diode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1115824A (fr) * 1953-12-12 1956-04-30 Philips Nv Système d'électrodes, en particulier diode à cristal ou transistor
NL252939A (es) * 1959-10-19 1900-01-01
US3127285A (en) * 1961-02-21 1964-03-31 Vapor condensation doping method
NL276298A (es) * 1961-04-03 1900-01-01
US3165812A (en) * 1961-09-27 1965-01-19 Tokyo Shibaura Electric Co Method of manufacturing glass diodes
DE1815989A1 (de) * 1968-12-20 1970-07-02 Semikron Gleichrichterbau Halbleiter-Anordnung
US3763403A (en) * 1972-03-01 1973-10-02 Gen Electric Isolated heat-sink semiconductor device
LU67455A1 (es) * 1973-04-18 1973-10-23
US4599636A (en) * 1984-03-08 1986-07-08 General Semiconductor Industries, Inc. Two terminal axial lead suppressor and diode bridge device

Also Published As

Publication number Publication date
ATE101943T1 (de) 1994-03-15
YU47581B (sh) 1995-10-24
EP0404760A1 (de) 1991-01-02
EP0404760B1 (de) 1994-02-23
KR920005350B1 (ko) 1992-07-02
DE3887992D1 (de) 1994-03-31
KR900701047A (ko) 1990-08-17
US5023702A (en) 1991-06-11
HK12296A (en) 1996-02-02
YU238988A (en) 1991-04-30
MY103504A (en) 1993-06-30
WO1989008325A1 (en) 1989-09-08

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