KR970705186A - 호일매트릭스에 구를 부착하기 위한 방법 및 장치 - Google Patents

호일매트릭스에 구를 부착하기 위한 방법 및 장치 Download PDF

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KR970705186A
KR970705186A KR1019970700377A KR19970700377A KR970705186A KR 970705186 A KR970705186 A KR 970705186A KR 1019970700377 A KR1019970700377 A KR 1019970700377A KR 19970700377 A KR19970700377 A KR 19970700377A KR 970705186 A KR970705186 A KR 970705186A
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그레고리 호치키스
줄스 대비드 리바인
바울 레이 샤록
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마조리 엘리자베스 그레빌리
온타리오 하이드로
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Abstract

본 발명은 구(4)를 호일 매트릭스(2)에 부착하는 방법으로, 먼저 상부 및 하부압착패드(34), (36) 사이에 놓여지는 호일 매트릭스(2)에 장착된 구(4)를 포함하는 셀 샌드위치(32)를 마련한다. 이후 셀 샌드위치(32)를 온도 약 350℃로 가열하고, 가열된 셀 샌드위치(32)를 롤프레스(48)에 통과시켜 압착함으로써 호일 매트릭스(2)에 구(4)를 부착시킨다.

Description

호일매트릭스에 구를 부착하기 위한 방법 및 장치.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4a도 및 제 4b도는 본 발명의 롤링공정을 나타낸 도면.

Claims (21)

  1. 다수의 열로 형성된 다수의 개구를 포함하며, 상기 각각의 개구에 구가 배열되어 있는 호일을 제공하는 단계: 상부 및 하부 압착패드 사이에 호일매트릭스를 위치시켜 셀 샌드위치를 마련하는 단계: 상기 셀 샌드위치를 가열하는 단계: 및 상기 가열된 셀 샌드위치내에서 상기 다수의 구열내의 각 열을 압착하는 단계로 구성되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  2. 청구항 1에 있어서, 상기 각 열은 연속적으로 압착되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  3. 청구항 1 또는 청구항 2에 있어서, 상기 셀 샌드위치가 롤프레스를 통과하는 단계를 포함함으로써 상기 셀 샌드위치를 압착하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  4. 전기 항중 어느 한 항에 있어서, 상기 상부 및 하부 압착패드는 유연성 시이트를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  5. 청구항 4에 있어서, 상기 유연성 시이트는 이형막층으로 도포되어 있는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  6. 전기 항중 어느 한 항 1에 있어서, 상기 상부 압착패드는 스테인레스스틸 시이트: 그 위에 산화층을 갖는 제1알루미늄 시이트: 제1석고층: 제2알루미늄 시이트: 및 제2석고층으로 구성된 다수의 층으로 되어 있으며, 상기 하부압착 패드는 스테일레스스틸 시이트: 그 위에 형성된 산화층을 갖는 알루미늄 시이트: 및 석고층으로 구성된 다수의 층으로 되어 있는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  7. 청구항 1 내지 청구항 5중 어느 한 항에 있어서, 상기 상부 압착패드 및 하부 압착패드는 각각 석고이형막을 갖는 산화 알루미늄 시이트를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  8. 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치를 가열하는 단계는 온도 500~540°C에서 셀 샌드위치를 가열하는 단계를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  9. 전기 항중 어느 한 항에 있어서, 상기 가열단계는 상기 압착단계 이전에 실행되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  10. 청구항 1 내지 청구항 8중 어느 한 항에 있어서, 상기 가열단계는 상기 압착단계 이후에 실행되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  11. 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치를 클램셀내에 위치시키는 단계를 또한 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  12. 청구항 11에 있어서, 상기 셀 샌드위치를 상기 클램셀내에 위치시키기 전에 상기 클램셀을 가열하는 단계를 또한 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  13. 청구항 11 또는 청구항 12에 있어서, 상기 클램셀은 상기 클램셀의 두께가 균일하지 않도록 단부를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
  14. 청구항 11 내지 청구항 13중 어느 한 항에 있어서, 상기 클램셀의 표면은 상기 셀 샌드위치에 다른 재료가 부착되지 않도록 조절되는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
  15. 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치를 냉각하는 단계를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  16. 전기 항중 어느 한 항에 있어서, 상기 개구는 6각 구조로 형성되어 있는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
  17. 청구항 3에 종속되는 전기 항중 어느 한 항에 있어서, 상기 롤프레스는 하나의 직경을 갖는 제1롤러와 상기 직경을 갖는 제2롤러를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
  18. 청구항 3에 종속되는 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치가 위로 움직이게 하는 단계를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
  19. 전기 항중 어느 한 항의 방법에 의하여 형성되는 것을 특징으로 하는 구의 조립체.
  20. 청구항 19에 있어서, 구는 반도체 재료인 것을 특징으로 하는 조립체.
  21. 청구항 20에 있어서, 구는 실리콘인 것을 특징으로 하는 조립체.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970700377A 1994-07-22 1995-07-20 호일매트릭스에 구를 부착하기 위한 방법 및 장치 KR100386785B1 (ko)

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Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620927A (en) * 1995-05-25 1997-04-15 National Semiconductor Corporation Solder ball attachment machine for semiconductor packages
US6066509A (en) * 1998-03-12 2000-05-23 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
US5766982A (en) * 1996-03-07 1998-06-16 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
US5744759A (en) * 1996-05-29 1998-04-28 International Business Machines Corporation Circuit boards that can accept a pluggable tab module that can be attached or removed without solder
EP0866506B1 (en) 1996-10-09 2008-12-03 Josuke Nakata Semiconductor device
DE69725601T2 (de) * 1997-08-27 2004-04-15 Nakata, Josuke, Joyo Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial
US6284568B1 (en) * 1998-07-31 2001-09-04 Kabushiki Kaisha Toshiba Method and system for producing semiconductor device
JP2001210843A (ja) * 1999-11-17 2001-08-03 Fuji Mach Mfg Co Ltd 光発電パネルおよびその製造方法
KR100324333B1 (ko) * 2000-01-04 2002-02-16 박종섭 적층형 패키지 및 그 제조 방법
US7547579B1 (en) * 2000-04-06 2009-06-16 Micron Technology, Inc. Underfill process
US6736942B2 (en) * 2000-05-02 2004-05-18 Johns Hopkins University Freestanding reactive multilayer foils
JP3922868B2 (ja) * 2000-06-23 2007-05-30 株式会社三井ハイテック 太陽電池の製造方法および太陽電池
US6441298B1 (en) * 2000-08-15 2002-08-27 Nec Research Institute, Inc Surface-plasmon enhanced photovoltaic device
JP2002104819A (ja) * 2000-09-28 2002-04-10 Kyocera Corp 結晶質シリコン粒子およびその製造方法および結晶質シリコン粒子を用いた光電変換装置
DE10052914A1 (de) * 2000-10-25 2002-05-16 Steffen Jaeger Halbleitereinrichtung und Verfahren zu deren Herstellung
WO2003017382A1 (fr) * 2001-08-13 2003-02-27 Josuke Nakata Module a semi-conducteur emetteur de lumiere ou recepteur de lumiere et procede de fabrication correspondant
AU2001277779B2 (en) * 2001-08-13 2005-04-07 Sphelar Power Corporation Semiconductor device and method of its manufacture
US7602035B2 (en) * 2001-10-19 2009-10-13 Josuke Nakata Light emitting or light receiving semiconductor module and method for manufacturing same
US6649901B2 (en) 2002-03-14 2003-11-18 Nec Laboratories America, Inc. Enhanced optical transmission apparatus with improved aperture geometry
AU2002255303B2 (en) * 2002-05-02 2006-07-06 Sphelar Power Corporation Light-Receiving panel or light-emitting panel, and manufacturing method thereof
JP4021441B2 (ja) * 2002-06-21 2007-12-12 仗祐 中田 受光又は発光用デバイスおよびその製造方法
US6897085B2 (en) * 2003-01-21 2005-05-24 Spheral Solar Power, Inc. Method of fabricating an optical concentrator for a photovoltaic solar cell
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
ES2307944T3 (es) * 2003-06-09 2008-12-01 Kyosemi Corporation Sistema generador.
US20060185715A1 (en) * 2003-07-25 2006-08-24 Hammerbacher Milfred D Photovoltaic apparatus including spherical semiconducting particles
US8570373B2 (en) * 2007-06-08 2013-10-29 Cisco Technology, Inc. Tracking an object utilizing location information associated with a wireless device
US8355041B2 (en) * 2008-02-14 2013-01-15 Cisco Technology, Inc. Telepresence system for 360 degree video conferencing
US8797377B2 (en) * 2008-02-14 2014-08-05 Cisco Technology, Inc. Method and system for videoconference configuration
US8319819B2 (en) * 2008-03-26 2012-11-27 Cisco Technology, Inc. Virtual round-table videoconference
US8390667B2 (en) * 2008-04-15 2013-03-05 Cisco Technology, Inc. Pop-up PIP for people not in picture
US8694658B2 (en) * 2008-09-19 2014-04-08 Cisco Technology, Inc. System and method for enabling communication sessions in a network environment
US8659637B2 (en) * 2009-03-09 2014-02-25 Cisco Technology, Inc. System and method for providing three dimensional video conferencing in a network environment
US20100283829A1 (en) * 2009-05-11 2010-11-11 Cisco Technology, Inc. System and method for translating communications between participants in a conferencing environment
US9082297B2 (en) * 2009-08-11 2015-07-14 Cisco Technology, Inc. System and method for verifying parameters in an audiovisual environment
US9225916B2 (en) * 2010-03-18 2015-12-29 Cisco Technology, Inc. System and method for enhancing video images in a conferencing environment
USD682294S1 (en) 2010-12-16 2013-05-14 Cisco Technology, Inc. Display screen with graphical user interface
JP6024529B2 (ja) * 2013-03-11 2016-11-16 株式会社豊田自動織機 太陽電池モジュール、および太陽電池モジュールの製造方法
US10351953B2 (en) * 2017-03-16 2019-07-16 Lam Research Corporation Systems and methods for flow monitoring in a precursor vapor supply system of a substrate processing system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451968A (en) * 1981-09-08 1984-06-05 Texas Instruments Incorporated Method and device for providing an ohmic contact of high resistance on a semiconductor at low temperatures
US4407320A (en) * 1981-09-08 1983-10-04 Texas Instruments Incorporated Large area, fault tolerant solar energy converter
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US4917752A (en) * 1984-09-04 1990-04-17 Texas Instruments Incorporated Method of forming contacts on semiconductor members
US4691076A (en) * 1984-09-04 1987-09-01 Texas Instruments Incorporated Solar array with aluminum foil matrix
US4581103A (en) * 1984-09-04 1986-04-08 Texas Instruments Incorporated Method of etching semiconductor material
US4872607A (en) * 1988-02-04 1989-10-10 Texas Instruments Incorporated Method of bonding semiconductor material to an aluminum foil
US4992138A (en) * 1989-07-31 1991-02-12 Texas Instruments Incorporated Method and apparatus for constructing a foil matrix for a solar cell
US5091319A (en) * 1989-07-31 1992-02-25 Hotchkiss Gregory B Method of affixing silicon spheres to a foil matrix
US5028546A (en) * 1989-07-31 1991-07-02 Texas Instruments Incorporated Method for manufacture of solar cell with foil contact point
US5258331A (en) * 1989-10-20 1993-11-02 Texas Instruments Incorporated Method of manufacturing resin-encapsulated semiconductor device package using photoresist or pre-peg lead frame dam bars
JP2828318B2 (ja) * 1990-05-18 1998-11-25 新光電気工業株式会社 多層リードフレームの製造方法

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EP0772890A1 (en) 1997-05-14
CA2195098A1 (en) 1996-02-08
US5498576A (en) 1996-03-12
CA2195098C (en) 2004-10-12
EP0772890B1 (en) 2001-01-17
WO1996003775A1 (en) 1996-02-08
DE69519930T2 (de) 2001-08-02
JP3865773B2 (ja) 2007-01-10
DE69519930D1 (de) 2001-02-22
KR100386785B1 (ko) 2003-08-25
JPH10503058A (ja) 1998-03-17

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