KR970705186A - 호일매트릭스에 구를 부착하기 위한 방법 및 장치 - Google Patents
호일매트릭스에 구를 부착하기 위한 방법 및 장치 Download PDFInfo
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- KR970705186A KR970705186A KR1019970700377A KR19970700377A KR970705186A KR 970705186 A KR970705186 A KR 970705186A KR 1019970700377 A KR1019970700377 A KR 1019970700377A KR 19970700377 A KR19970700377 A KR 19970700377A KR 970705186 A KR970705186 A KR 970705186A
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- 238000000034 method Methods 0.000 title claims abstract 19
- 239000011888 foil Substances 0.000 title claims abstract 7
- 239000011159 matrix material Substances 0.000 title claims abstract 5
- 238000010438 heat treatment Methods 0.000 claims 6
- 229910052602 gypsum Inorganic materials 0.000 claims 4
- 239000010440 gypsum Substances 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 230000006835 compression Effects 0.000 claims 3
- 238000007906 compression Methods 0.000 claims 3
- 230000001419 dependent effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910001220 stainless steel Inorganic materials 0.000 claims 2
- 239000010935 stainless steel Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005096 rolling process Methods 0.000 description 1
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- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Microelectronics & Electronic Packaging (AREA)
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- Pressure Welding/Diffusion-Bonding (AREA)
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Abstract
본 발명은 구(4)를 호일 매트릭스(2)에 부착하는 방법으로, 먼저 상부 및 하부압착패드(34), (36) 사이에 놓여지는 호일 매트릭스(2)에 장착된 구(4)를 포함하는 셀 샌드위치(32)를 마련한다. 이후 셀 샌드위치(32)를 온도 약 350℃로 가열하고, 가열된 셀 샌드위치(32)를 롤프레스(48)에 통과시켜 압착함으로써 호일 매트릭스(2)에 구(4)를 부착시킨다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4a도 및 제 4b도는 본 발명의 롤링공정을 나타낸 도면.
Claims (21)
- 다수의 열로 형성된 다수의 개구를 포함하며, 상기 각각의 개구에 구가 배열되어 있는 호일을 제공하는 단계: 상부 및 하부 압착패드 사이에 호일매트릭스를 위치시켜 셀 샌드위치를 마련하는 단계: 상기 셀 샌드위치를 가열하는 단계: 및 상기 가열된 셀 샌드위치내에서 상기 다수의 구열내의 각 열을 압착하는 단계로 구성되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 1에 있어서, 상기 각 열은 연속적으로 압착되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 1 또는 청구항 2에 있어서, 상기 셀 샌드위치가 롤프레스를 통과하는 단계를 포함함으로써 상기 셀 샌드위치를 압착하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 전기 항중 어느 한 항에 있어서, 상기 상부 및 하부 압착패드는 유연성 시이트를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 4에 있어서, 상기 유연성 시이트는 이형막층으로 도포되어 있는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 전기 항중 어느 한 항 1에 있어서, 상기 상부 압착패드는 스테인레스스틸 시이트: 그 위에 산화층을 갖는 제1알루미늄 시이트: 제1석고층: 제2알루미늄 시이트: 및 제2석고층으로 구성된 다수의 층으로 되어 있으며, 상기 하부압착 패드는 스테일레스스틸 시이트: 그 위에 형성된 산화층을 갖는 알루미늄 시이트: 및 석고층으로 구성된 다수의 층으로 되어 있는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 1 내지 청구항 5중 어느 한 항에 있어서, 상기 상부 압착패드 및 하부 압착패드는 각각 석고이형막을 갖는 산화 알루미늄 시이트를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치를 가열하는 단계는 온도 500~540°C에서 셀 샌드위치를 가열하는 단계를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 전기 항중 어느 한 항에 있어서, 상기 가열단계는 상기 압착단계 이전에 실행되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 1 내지 청구항 8중 어느 한 항에 있어서, 상기 가열단계는 상기 압착단계 이후에 실행되는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치를 클램셀내에 위치시키는 단계를 또한 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 11에 있어서, 상기 셀 샌드위치를 상기 클램셀내에 위치시키기 전에 상기 클램셀을 가열하는 단계를 또한 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 11 또는 청구항 12에 있어서, 상기 클램셀은 상기 클램셀의 두께가 균일하지 않도록 단부를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
- 청구항 11 내지 청구항 13중 어느 한 항에 있어서, 상기 클램셀의 표면은 상기 셀 샌드위치에 다른 재료가 부착되지 않도록 조절되는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
- 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치를 냉각하는 단계를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 전기 항중 어느 한 항에 있어서, 상기 개구는 6각 구조로 형성되어 있는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
- 청구항 3에 종속되는 전기 항중 어느 한 항에 있어서, 상기 롤프레스는 하나의 직경을 갖는 제1롤러와 상기 직경을 갖는 제2롤러를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트릭스에 부착하는 방법.
- 청구항 3에 종속되는 전기 항중 어느 한 항에 있어서, 상기 셀 샌드위치가 위로 움직이게 하는 단계를 포함하는 것을 특징으로 하는 다수의 구를 호일 매트리스에 부착하는 방법.
- 전기 항중 어느 한 항의 방법에 의하여 형성되는 것을 특징으로 하는 구의 조립체.
- 청구항 19에 있어서, 구는 반도체 재료인 것을 특징으로 하는 조립체.
- 청구항 20에 있어서, 구는 실리콘인 것을 특징으로 하는 조립체.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/279,320 | 1994-07-22 | ||
US08/279,320 US5498576A (en) | 1994-07-22 | 1994-07-22 | Method and apparatus for affixing spheres to a foil matrix |
Publications (2)
Publication Number | Publication Date |
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KR970705186A true KR970705186A (ko) | 1997-09-06 |
KR100386785B1 KR100386785B1 (ko) | 2003-08-25 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019970700377A KR100386785B1 (ko) | 1994-07-22 | 1995-07-20 | 호일매트릭스에 구를 부착하기 위한 방법 및 장치 |
Country Status (7)
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US (1) | US5498576A (ko) |
EP (1) | EP0772890B1 (ko) |
JP (1) | JP3865773B2 (ko) |
KR (1) | KR100386785B1 (ko) |
CA (1) | CA2195098C (ko) |
DE (1) | DE69519930T2 (ko) |
WO (1) | WO1996003775A1 (ko) |
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US5744759A (en) * | 1996-05-29 | 1998-04-28 | International Business Machines Corporation | Circuit boards that can accept a pluggable tab module that can be attached or removed without solder |
EP0866506B1 (en) | 1996-10-09 | 2008-12-03 | Josuke Nakata | Semiconductor device |
DE69725601T2 (de) * | 1997-08-27 | 2004-04-15 | Nakata, Josuke, Joyo | Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial |
US6284568B1 (en) * | 1998-07-31 | 2001-09-04 | Kabushiki Kaisha Toshiba | Method and system for producing semiconductor device |
JP2001210843A (ja) * | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | 光発電パネルおよびその製造方法 |
KR100324333B1 (ko) * | 2000-01-04 | 2002-02-16 | 박종섭 | 적층형 패키지 및 그 제조 방법 |
US7547579B1 (en) * | 2000-04-06 | 2009-06-16 | Micron Technology, Inc. | Underfill process |
US6736942B2 (en) * | 2000-05-02 | 2004-05-18 | Johns Hopkins University | Freestanding reactive multilayer foils |
JP3922868B2 (ja) * | 2000-06-23 | 2007-05-30 | 株式会社三井ハイテック | 太陽電池の製造方法および太陽電池 |
US6441298B1 (en) * | 2000-08-15 | 2002-08-27 | Nec Research Institute, Inc | Surface-plasmon enhanced photovoltaic device |
JP2002104819A (ja) * | 2000-09-28 | 2002-04-10 | Kyocera Corp | 結晶質シリコン粒子およびその製造方法および結晶質シリコン粒子を用いた光電変換装置 |
DE10052914A1 (de) * | 2000-10-25 | 2002-05-16 | Steffen Jaeger | Halbleitereinrichtung und Verfahren zu deren Herstellung |
WO2003017382A1 (fr) * | 2001-08-13 | 2003-02-27 | Josuke Nakata | Module a semi-conducteur emetteur de lumiere ou recepteur de lumiere et procede de fabrication correspondant |
AU2001277779B2 (en) * | 2001-08-13 | 2005-04-07 | Sphelar Power Corporation | Semiconductor device and method of its manufacture |
US7602035B2 (en) * | 2001-10-19 | 2009-10-13 | Josuke Nakata | Light emitting or light receiving semiconductor module and method for manufacturing same |
US6649901B2 (en) | 2002-03-14 | 2003-11-18 | Nec Laboratories America, Inc. | Enhanced optical transmission apparatus with improved aperture geometry |
AU2002255303B2 (en) * | 2002-05-02 | 2006-07-06 | Sphelar Power Corporation | Light-Receiving panel or light-emitting panel, and manufacturing method thereof |
JP4021441B2 (ja) * | 2002-06-21 | 2007-12-12 | 仗祐 中田 | 受光又は発光用デバイスおよびその製造方法 |
US6897085B2 (en) * | 2003-01-21 | 2005-05-24 | Spheral Solar Power, Inc. | Method of fabricating an optical concentrator for a photovoltaic solar cell |
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ES2307944T3 (es) * | 2003-06-09 | 2008-12-01 | Kyosemi Corporation | Sistema generador. |
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US4451968A (en) * | 1981-09-08 | 1984-06-05 | Texas Instruments Incorporated | Method and device for providing an ohmic contact of high resistance on a semiconductor at low temperatures |
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US4614835A (en) * | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
US4917752A (en) * | 1984-09-04 | 1990-04-17 | Texas Instruments Incorporated | Method of forming contacts on semiconductor members |
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US4872607A (en) * | 1988-02-04 | 1989-10-10 | Texas Instruments Incorporated | Method of bonding semiconductor material to an aluminum foil |
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US5028546A (en) * | 1989-07-31 | 1991-07-02 | Texas Instruments Incorporated | Method for manufacture of solar cell with foil contact point |
US5258331A (en) * | 1989-10-20 | 1993-11-02 | Texas Instruments Incorporated | Method of manufacturing resin-encapsulated semiconductor device package using photoresist or pre-peg lead frame dam bars |
JP2828318B2 (ja) * | 1990-05-18 | 1998-11-25 | 新光電気工業株式会社 | 多層リードフレームの製造方法 |
-
1994
- 1994-07-22 US US08/279,320 patent/US5498576A/en not_active Expired - Lifetime
-
1995
- 1995-07-20 CA CA002195098A patent/CA2195098C/en not_active Expired - Fee Related
- 1995-07-20 DE DE69519930T patent/DE69519930T2/de not_active Expired - Lifetime
- 1995-07-20 JP JP50556696A patent/JP3865773B2/ja not_active Expired - Fee Related
- 1995-07-20 EP EP95925925A patent/EP0772890B1/en not_active Expired - Lifetime
- 1995-07-20 WO PCT/GB1995/001710 patent/WO1996003775A1/en active IP Right Grant
- 1995-07-20 KR KR1019970700377A patent/KR100386785B1/ko not_active IP Right Cessation
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EP0772890A1 (en) | 1997-05-14 |
CA2195098A1 (en) | 1996-02-08 |
US5498576A (en) | 1996-03-12 |
CA2195098C (en) | 2004-10-12 |
EP0772890B1 (en) | 2001-01-17 |
WO1996003775A1 (en) | 1996-02-08 |
DE69519930T2 (de) | 2001-08-02 |
JP3865773B2 (ja) | 2007-01-10 |
DE69519930D1 (de) | 2001-02-22 |
KR100386785B1 (ko) | 2003-08-25 |
JPH10503058A (ja) | 1998-03-17 |
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