KR970703046A - 랩-어라운드 플랜지 인터페이스를 위한 콘택트 프로세싱을 갖춘 반도체 제조방법 및 장치(semiconductor fabrication with contact processing for wrap-around flange interface) - Google Patents

랩-어라운드 플랜지 인터페이스를 위한 콘택트 프로세싱을 갖춘 반도체 제조방법 및 장치(semiconductor fabrication with contact processing for wrap-around flange interface)

Info

Publication number
KR970703046A
KR970703046A KR1019960706370A KR19960706370A KR970703046A KR 970703046 A KR970703046 A KR 970703046A KR 1019960706370 A KR1019960706370 A KR 1019960706370A KR 19960706370 A KR19960706370 A KR 19960706370A KR 970703046 A KR970703046 A KR 970703046A
Authority
KR
South Korea
Prior art keywords
wrap
contact processing
flange interface
around flange
semiconductor
Prior art date
Application number
KR1019960706370A
Other languages
English (en)
Other versions
KR100343030B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970703046A publication Critical patent/KR970703046A/ko
Application granted granted Critical
Publication of KR100343030B1 publication Critical patent/KR100343030B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13062Junction field-effect transistor [JFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019960706370A 1994-05-11 1995-04-27 랩-어라운드플랜지인터페이스를위한콘택트프로세싱을갖춘반도체제조방법및장치 KR100343030B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/241,602 1994-05-11
US08/241,602 US5656547A (en) 1994-05-11 1994-05-11 Method for making a leadless surface mounted device with wrap-around flange interface contacts
PCT/US1995/005189 WO1995031829A1 (en) 1994-05-11 1995-04-27 Semiconductor fabrication with contact processing for wrap-around flange interface

Publications (2)

Publication Number Publication Date
KR970703046A true KR970703046A (ko) 1997-06-10
KR100343030B1 KR100343030B1 (ko) 2002-12-05

Family

ID=22911374

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960706370A KR100343030B1 (ko) 1994-05-11 1995-04-27 랩-어라운드플랜지인터페이스를위한콘택트프로세싱을갖춘반도체제조방법및장치

Country Status (8)

Country Link
US (2) US5656547A (ko)
JP (2) JP4159599B2 (ko)
KR (1) KR100343030B1 (ko)
AU (1) AU2366795A (ko)
DE (1) DE19580514B4 (ko)
GB (1) GB2302210B (ko)
HK (1) HK1012776A1 (ko)
WO (1) WO1995031829A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100726059B1 (ko) * 2002-01-23 2007-06-08 피닉스 프리시젼 테크날로지 코포레이션 플립칩 조인트 및 보드대면형 솔더 조인트를 위한유기회로보드 상의 전기도금 솔더 형성

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3263288B2 (ja) * 1995-09-13 2002-03-04 株式会社東芝 半導体装置
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
US6284563B1 (en) * 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
US5903059A (en) * 1995-11-21 1999-05-11 International Business Machines Corporation Microconnectors
US5789278A (en) * 1996-07-30 1998-08-04 Micron Technology, Inc. Method for fabricating chip modules
TW335595B (en) * 1996-09-09 1998-07-01 Philips Electronics Nv Electric component which can be mounted on the surface of a printed circuit board as well as a method of manufacturiing such components
US5910687A (en) 1997-01-24 1999-06-08 Chipscale, Inc. Wafer fabrication of die-bottom contacts for electronic devices
US5904496A (en) * 1997-01-24 1999-05-18 Chipscale, Inc. Wafer fabrication of inside-wrapped contacts for electronic devices
US5770477A (en) * 1997-02-10 1998-06-23 Delco Electronics Corporation Flip chip-on-flip chip multi-chip module
EP0860876A3 (de) * 1997-02-21 1999-09-22 DaimlerChrysler AG Anordnung und Verfahren zur Herstellung von CSP-Gehäusen für elektrische Bauteile
US6414585B1 (en) * 1997-05-13 2002-07-02 Chipscale, Inc. Integrated passive components and package with posts
US6051489A (en) * 1997-05-13 2000-04-18 Chipscale, Inc. Electronic component package with posts on the active side of the substrate
DE19756325A1 (de) * 1997-12-18 1999-07-01 Daimler Chrysler Ag Halbleiterscheibe mit integrierten Einzelbauelementen, Verfahren und Vorrichtung zur Herstellung einer Halbleiterscheibe
US6294407B1 (en) 1998-05-06 2001-09-25 Virtual Integration, Inc. Microelectronic packages including thin film decal and dielectric adhesive layer having conductive vias therein, and methods of fabricating the same
US6093583A (en) * 1998-06-01 2000-07-25 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
US6655022B1 (en) 1998-09-24 2003-12-02 Intel Corporation Implementing micro BGA assembly techniques for small die
US6187611B1 (en) * 1998-10-23 2001-02-13 Microsemi Microwave Products, Inc. Monolithic surface mount semiconductor device and method for fabricating same
US6489557B2 (en) 1999-08-30 2002-12-03 Intel Corporation Implementing micro BGA™ assembly techniques for small die
US6521513B1 (en) * 2000-07-05 2003-02-18 Eastman Kodak Company Silicon wafer configuration and method for forming same
DE10042931A1 (de) * 2000-08-31 2002-03-28 Infineon Technologies Ag Verfahren zum Befestigen eines Halbleiterchips auf einem Substrat und entsprechende Vorrichtung
GB2371922B (en) * 2000-09-21 2004-12-15 Cambridge Semiconductor Ltd Semiconductor device and method of forming a semiconductor device
US6501166B2 (en) 2000-12-29 2002-12-31 Intel Corporation Stitched plane structure and process for package power delivery and dual referenced stripline I/O performance
US8846149B2 (en) * 2006-02-21 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Delamination resistant semiconductor film and method for forming the same
US8501612B2 (en) * 2007-09-20 2013-08-06 Semiconductor Components Industries, Llc Flip chip structure and method of manufacture
US7830022B2 (en) * 2007-10-22 2010-11-09 Infineon Technologies Ag Semiconductor package
KR101695846B1 (ko) 2010-03-02 2017-01-16 삼성전자 주식회사 적층형 반도체 패키지
DE102011018295B4 (de) 2011-04-20 2021-06-24 Austriamicrosystems Ag Verfahren zum Schneiden eines Trägers für elektrische Bauelemente
US8890247B2 (en) * 2012-10-15 2014-11-18 International Business Machines Corporation Extremely thin semiconductor-on-insulator with back gate contact
US10468363B2 (en) 2015-08-10 2019-11-05 X-Celeprint Limited Chiplets with connection posts
US10103069B2 (en) 2016-04-01 2018-10-16 X-Celeprint Limited Pressure-activated electrical interconnection by micro-transfer printing
US10222698B2 (en) 2016-07-28 2019-03-05 X-Celeprint Limited Chiplets with wicking posts
US11064609B2 (en) 2016-08-04 2021-07-13 X Display Company Technology Limited Printable 3D electronic structure

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL276298A (ko) * 1961-04-03 1900-01-01
US3139678A (en) * 1961-08-30 1964-07-07 Scully Anthony Corp Method of cold pressure welding electrical enclosure members
US3280019A (en) * 1963-07-03 1966-10-18 Ibm Method of selectively coating semiconductor chips
JPS5144391B1 (ko) * 1967-04-19 1976-11-27
US3445925A (en) * 1967-04-25 1969-05-27 Motorola Inc Method for making thin semiconductor dice
NL6706735A (ko) * 1967-05-13 1968-11-14
US3594619A (en) * 1967-09-30 1971-07-20 Nippon Electric Co Face-bonded semiconductor device having improved heat dissipation
US3462655A (en) * 1967-12-01 1969-08-19 Int Rectifier Corp Semiconductor wafer forming a plurality of rectifiers
US3483308A (en) * 1968-10-24 1969-12-09 Texas Instruments Inc Modular packages for semiconductor devices
US3573516A (en) * 1969-04-23 1971-04-06 Gen Electric Rectifier bridge for use with an alternator
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array
US3666588A (en) * 1970-01-26 1972-05-30 Western Electric Co Method of retaining and bonding articles
US3680205A (en) * 1970-03-03 1972-08-01 Dionics Inc Method of producing air-isolated integrated circuits
US3686748A (en) * 1970-04-13 1972-08-29 William E Engeler Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
US3761782A (en) * 1971-05-19 1973-09-25 Signetics Corp Semiconductor structure, assembly and method
US3746945A (en) * 1971-10-27 1973-07-17 Motorola Inc Schottky diode clipper device
BE790652A (fr) * 1971-10-28 1973-02-15 Siemens Ag Composant a semi-conducteurs a connexions portantes
US3905094A (en) * 1972-01-10 1975-09-16 Displaytek Corp Thermal display module
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices
US3886578A (en) * 1973-02-26 1975-05-27 Multi State Devices Ltd Low ohmic resistance platinum contacts for vanadium oxide thin film devices
FR2220877A1 (en) * 1973-03-09 1974-10-04 Thomson Csf PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US3820235A (en) * 1973-05-21 1974-06-28 Philco Ford Corp Guard ring structure for microwave schottky diode
US4033027A (en) * 1975-09-26 1977-07-05 Bell Telephone Laboratories, Incorporated Dividing metal plated semiconductor wafers
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
US4063176A (en) * 1976-07-29 1977-12-13 Vari-L Company, Inc. Broadband high frequency mixer
JPS5419384A (en) * 1977-07-14 1979-02-14 Oki Electric Ind Co Ltd Production of semiconductor light emitting devices
JPS54136176A (en) * 1978-04-13 1979-10-23 Nec Corp Manufacture of beam lead type semiconductor device
US4250520A (en) * 1979-03-14 1981-02-10 Rca Corporation Flip chip mounted diode
JPS5651829A (en) * 1979-10-02 1981-05-09 Sanyo Electric Co Ltd Glassivating method for bevel-type semiconductor element
DE3067381D1 (en) * 1979-11-15 1984-05-10 Secr Defence Brit Series-connected combination of two-terminal semiconductor devices and their fabrication
GB2067354B (en) * 1980-01-09 1984-04-18 Aei Semiconductors Ltd Mounting for a sc device
US4278985A (en) * 1980-04-14 1981-07-14 Gte Laboratories Incorporated Monolithic integrated circuit structure incorporating Schottky contact diode bridge rectifier
JPS56148848A (en) * 1980-04-21 1981-11-18 Nec Corp Beam lead type semiconductor device
EP0057135B1 (en) * 1981-01-23 1985-09-04 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Low resistance schottky diode on polysilicon/metal-silicide
JPS5854656A (ja) * 1981-09-28 1983-03-31 Nec Home Electronics Ltd 半導体装置のキヤツプ封着方法
US4681656A (en) * 1983-02-22 1987-07-21 Byrum James E IC carrier system
US4577213A (en) * 1984-03-05 1986-03-18 Honeywell Inc. Internally matched Schottky barrier beam lead diode
JPS6148928A (ja) * 1984-08-16 1986-03-10 Fuji Photo Optical Co Ltd ハイブリッド集積回路
US4612408A (en) * 1984-10-22 1986-09-16 Sera Solar Corporation Electrically isolated semiconductor integrated photodiode circuits and method
JPS61144036A (ja) * 1984-12-18 1986-07-01 Nec Corp 半導体装置およびその製造方法
US4708060A (en) * 1985-02-19 1987-11-24 The United States Of America As Represented By The United States Department Of Energy Semiconductor bridge (SCB) igniter
US4811080A (en) * 1985-08-27 1989-03-07 Fei Microwave, Inc. Monolithic pin diode and method for its manufacture
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
JPS62203364A (ja) * 1986-03-03 1987-09-08 Nec Corp 半導体装置の製造方法
CA1269164A (en) * 1986-03-24 1990-05-15 Metin Aktik Photosensitive diode with hydrogenated amorphous silicon layer
US4733290A (en) * 1986-04-18 1988-03-22 M/A-Com, Inc. Semiconductor device and method of fabrication
US4859629A (en) * 1986-04-18 1989-08-22 M/A-Com, Inc. Method of fabricating a semiconductor beam lead device
US4855796A (en) * 1986-06-06 1989-08-08 Hughes Aircraft Company Beam lead mixer diode
JPS6347972A (ja) * 1986-08-18 1988-02-29 Sanyo Electric Co Ltd 半導体装置
JPH0629808B2 (ja) * 1987-03-03 1994-04-20 工業技術院長 圧覚センサ
JPS63288062A (ja) * 1987-05-20 1988-11-25 Nec Corp ビ−ムリ−ド型ダイオ−ド
GB8719309D0 (en) * 1987-08-14 1987-09-23 Marconi Electronic Devices Diodes
JP2631665B2 (ja) * 1987-09-24 1997-07-16 日立マクセル株式会社 積層半導体装置の製造方法
US4780424A (en) * 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
JPH01257355A (ja) * 1987-12-14 1989-10-13 Mitsubishi Electric Corp マイクロ波モノリシックic
US4905071A (en) * 1988-04-01 1990-02-27 Alpha Industries, Inc. Monolithic series-shunt diode switch
US5162258A (en) * 1988-10-17 1992-11-10 Lemnios Zachary J Three metal personalization of application specific monolithic microwave integrated circuit
WO1990005997A1 (en) * 1988-11-21 1990-05-31 M-Pulse Microwave An improved beam leads for schottky-barrier diodes in a ring quand
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
US5024966A (en) * 1988-12-21 1991-06-18 At&T Bell Laboratories Method of forming a silicon-based semiconductor optical device mount
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
US5173449A (en) * 1989-06-05 1992-12-22 Motorola, Inc. Metallization process
WO1990015438A1 (en) * 1989-06-08 1990-12-13 Unistructure, Inc. Beam lead and semiconductor device structure and method for fabricating integrated structure
JPH03129738A (ja) * 1989-07-10 1991-06-03 Nec Corp 半導体装置
US5034801A (en) * 1989-07-31 1991-07-23 W. L. Gore & Associates, Inc. Intergrated circuit element having a planar, solvent-free dielectric layer
US4991286A (en) * 1989-12-20 1991-02-12 Microelectronics And Computer Technology Corporation Method for replacing defective electronic components
FR2665574B1 (fr) * 1990-08-03 1997-05-30 Thomson Composants Microondes Procede d'interconnexion entre un circuit integre et un circuit support, et circuit integre adapte a ce procede.
US5063177A (en) * 1990-10-04 1991-11-05 Comsat Method of packaging microwave semiconductor components and integrated circuits
JPH04162638A (ja) * 1990-10-26 1992-06-08 Hitachi Ltd 半導体集積回路装置の製造方法
US5139972A (en) * 1991-02-28 1992-08-18 General Electric Company Batch assembly of high density hermetic packages for power semiconductor chips
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JP2836334B2 (ja) * 1992-01-23 1998-12-14 三菱電機株式会社 高出力半導体装置の製造方法
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
JPH06112236A (ja) * 1992-09-25 1994-04-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5268310A (en) * 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
JP3221114B2 (ja) * 1992-12-14 2001-10-22 昭和電工株式会社 磁電変換素子
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5340771A (en) * 1993-03-18 1994-08-23 Lsi Logic Corporation Techniques for providing high I/O count connections to semiconductor dies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100726059B1 (ko) * 2002-01-23 2007-06-08 피닉스 프리시젼 테크날로지 코포레이션 플립칩 조인트 및 보드대면형 솔더 조인트를 위한유기회로보드 상의 전기도금 솔더 형성

Also Published As

Publication number Publication date
WO1995031829A1 (en) 1995-11-23
GB2302210B (en) 1998-09-16
JP4804510B2 (ja) 2011-11-02
JP4159599B2 (ja) 2008-10-01
DE19580514B4 (de) 2010-10-07
GB2302210A (en) 1997-01-08
DE19580514T1 (de) 1997-06-19
JP2008244498A (ja) 2008-10-09
GB9623266D0 (en) 1997-01-08
US5656547A (en) 1997-08-12
US5557149A (en) 1996-09-17
JPH10504135A (ja) 1998-04-14
KR100343030B1 (ko) 2002-12-05
AU2366795A (en) 1995-12-05
HK1012776A1 (en) 1999-08-06

Similar Documents

Publication Publication Date Title
KR970703046A (ko) 랩-어라운드 플랜지 인터페이스를 위한 콘택트 프로세싱을 갖춘 반도체 제조방법 및 장치(semiconductor fabrication with contact processing for wrap-around flange interface)
KR960009110A (ko) 반도체 장치 및 그 제조방법
KR960009107A (ko) 반도체장치와 그 제조방법
EP0704895A3 (en) Method of manufacturing a semiconductor device and a semiconductor substrate
DE69414208D1 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69435205D1 (de) Dünne Halbleitervorrichtung und Herstellungsverfahren
KR960012575A (ko) 반도체 장치 제조 방법
DE69534636D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
KR960015900A (ko) 반도체 장치 및 그 제조방법
SG63810A1 (en) Wafer processing apparatus wafer processing method and semiconductor substrate fabrication method
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
KR970700933A (ko) Besoi 웨이퍼와 그 외부 에지를 스트립하는 방법(besoi wafer and process for stripping outer edge thereof)
DE69424728D1 (de) Halbleiteranordnung und zugehörige Herstellungsmethode
KR960012574A (ko) 반도체장치 제조방법
DE69325343D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69738012D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
KR970004015A (ko) 반도체장치 및 그의 제조방법
KR960012313A (ko) 반도체 장치 및 그 제조방법
EP0616371A3 (en) Semiconductor device in silicon on insulator and method for its manufacture.
EP0738004A4 (en) METHOD AND DEVICE FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE
KR960012348A (ko) 반도체 결정표면 상의 오염을 제거하기 위한 방법
FI954241A (fi) Puolijohdelaitteen valmistusmenetelmä
DE69408248D1 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
GB9500996D0 (en) Semiconductor device and method for fabrication thereof

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]
FPAY Annual fee payment

Payment date: 20120611

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee