KR970067697A - 다층 구조의 어블레이션 패턴화 방법 - Google Patents
다층 구조의 어블레이션 패턴화 방법 Download PDFInfo
- Publication number
- KR970067697A KR970067697A KR1019960007290A KR19960007290A KR970067697A KR 970067697 A KR970067697 A KR 970067697A KR 1019960007290 A KR1019960007290 A KR 1019960007290A KR 19960007290 A KR19960007290 A KR 19960007290A KR 970067697 A KR970067697 A KR 970067697A
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- South Korea
- Prior art keywords
- layer
- ablation
- providing
- process product
- etch
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- 238000002679 ablation Methods 0.000 title claims abstract 8
- 238000000059 patterning Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract 5
- 239000004020 conductor Substances 0.000 claims abstract 3
- 238000010521 absorption reaction Methods 0.000 claims abstract 2
- 230000005855 radiation Effects 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract 2
- 238000002835 absorbance Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laser Beam Processing (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Abstract
아래에 놓인 전도층을 에칭하지 않을 지라도 1개 이상의 유전층을 통과하는 어블레이션 에칭을 위한 방법은 전도성 물질에 도달할 때 이것에 의해 자동적으로 어블레이션 공정이 중단하는 변수들을 선택하는 단계, 또는 원하는 어블레이션 정도의 종말점 감지를 위해 상기의 공정을 측정하는 단계를 포함한다. 선택된 변수들은 전도층의 흡수도에 대한 유전층의 흡수도이다. 종말점 감지단계는 공정 제품으로부터 반사된 복사 에너지 또는 공정 제품으로부터 어블레이션 물질의 함량을 측정하는 단계를 포함한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명이 이용되는 다층의 공정 제품에 대한 단면도이다.
Claims (5)
- 전기 전도체의 표면상에 유전 물질의 제1층을 제공하는 단계, 상기의 제1층 위에 놓이는 중합체 물질의 제2층을 제공하는 단계, 및 오프닝을 통해 상기 물체의 표면 일부를 노출시키기 위해 상기의 제1층 및 제2층 모두를 통하는 오프닝의 패턴을 어블레이션 에칭시키는 단계를 포함하는 다층의 공정 제품을 패턴화하는 방법.
- 제1항에 있어서, 상기의 제2층이 이산화규소 및 질화 규소로 이루어지는 그룹중 1개임을 특징으로 하는 방법.
- 제1항에 있어서, 상기의 전도체에 의해 하기의 에너지에 대한 흡수도를 초과하여 상기의 어블레이션 단계에서 사용된 복사 에너지에 대한 흡수도를 상기의 제2층에 제공하기 위해 상기의 제2층을 도우핑하는 단계를 포함함을 특징으로 하는 방법.
- 제1항에 있어서, 상기의 어블레이션 에칭을 수행하기 위해 상기의 공정 제품에 복사 에너지를 조사하는 단계, 상기 공정 제품으로부터 반사된 복사선을 감지하여 측정하는 단계, 상기의 전도체에 도달한 어블레이션 공정을 나타내는 상기의 감지된 복사선의 변화시에 상기 어블레이션 에칭을 중단시키는 단계를 포함함을 특징으로 하는 방법.
- 제1항에 있어서, 상기의 어블레이션 공정동안 상기의 공정 제품으로부터 어블레이션되는 물질의 함량을 모니터하고, 상기의 전도체에 도달한 어블레이팅하는 공정을 나타내는 상기의 모니터된 함량의 변화시에 상기의 공정을 중단시키는 단계를 포함함을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/414,241 | 1995-03-31 | ||
US08/414,241 US5843363A (en) | 1995-03-31 | 1995-03-31 | Ablation patterning of multi-layered structures |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970067697A true KR970067697A (ko) | 1997-10-13 |
KR100432773B1 KR100432773B1 (ko) | 2004-08-04 |
Family
ID=23640583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960007290A KR100432773B1 (ko) | 1995-03-31 | 1996-03-19 | 다층구조의어블레이션패턴화방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5843363A (ko) |
EP (1) | EP0735578A1 (ko) |
JP (1) | JPH08274064A (ko) |
KR (1) | KR100432773B1 (ko) |
TW (1) | TW373267B (ko) |
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US5236551A (en) * | 1990-05-10 | 1993-08-17 | Microelectronics And Computer Technology Corporation | Rework of polymeric dielectric electrical interconnect by laser photoablation |
JPH0464234A (ja) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | 配線パターンの形成方法 |
GB9015820D0 (en) * | 1990-07-18 | 1990-09-05 | Raychem Ltd | Processing microchips |
FR2675309A1 (fr) * | 1991-03-22 | 1992-10-16 | Siemens Ag | Procede pour eliminer localement des couches isolantes transparentes aux ultraviolets, situees sur un substrat semiconducteur. |
DE4203804C2 (de) * | 1991-03-22 | 1994-02-10 | Siemens Ag | Verfahren zur Herstellung von Kontakten auf einer mit einer UV-transparenten Isolationsschicht bedeckten leitenden Struktur in höchstintegrierten Schaltkreisen |
US5227013A (en) * | 1991-07-25 | 1993-07-13 | Microelectronics And Computer Technology Corporation | Forming via holes in a multilevel substrate in a single step |
US5281798A (en) * | 1991-12-24 | 1994-01-25 | Maxwell Laboratories, Inc. | Method and system for selective removal of material coating from a substrate using a flashlamp |
JP3212405B2 (ja) * | 1992-07-20 | 2001-09-25 | 富士通株式会社 | エキシマレーザ加工方法及び装置 |
US5302547A (en) * | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
US5505320A (en) * | 1994-11-22 | 1996-04-09 | International Business Machines Corporation | Method employing laser ablating for providing a pattern on a substrate |
-
1995
- 1995-03-31 US US08/414,241 patent/US5843363A/en not_active Expired - Lifetime
-
1996
- 1996-02-28 TW TW085102319A patent/TW373267B/zh active
- 1996-03-14 EP EP96104068A patent/EP0735578A1/en not_active Withdrawn
- 1996-03-19 KR KR1019960007290A patent/KR100432773B1/ko not_active IP Right Cessation
- 1996-04-01 JP JP8079239A patent/JPH08274064A/ja not_active Abandoned
-
1997
- 1997-03-31 US US08/829,370 patent/US5766497A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0735578A1 (en) | 1996-10-02 |
KR100432773B1 (ko) | 2004-08-04 |
US5843363A (en) | 1998-12-01 |
JPH08274064A (ja) | 1996-10-18 |
US5766497A (en) | 1998-06-16 |
TW373267B (en) | 1999-11-01 |
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