KR970059802A - 액정표시장치의 제조방법 - Google Patents

액정표시장치의 제조방법 Download PDF

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KR970059802A
KR970059802A KR1019970000955A KR19970000955A KR970059802A KR 970059802 A KR970059802 A KR 970059802A KR 1019970000955 A KR1019970000955 A KR 1019970000955A KR 19970000955 A KR19970000955 A KR 19970000955A KR 970059802 A KR970059802 A KR 970059802A
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energy beam
linear energy
liquid crystal
linear
scanning
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KR1019970000955A
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KR100356424B1 (ko
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신이치 가와무라
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니시무로 다이조
가부시키가이샤 도시바
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/091—Laser beam processing of fets

Abstract

본 발명은 액정표시장치의 제조방법에 관한 것으로, 박막트랜지스터의 특성에 기인한 표시얼룩을 시각적으로 포착하기 어렵게 하기 위해, 비정질실리콘에 선형상의 레이저를 여러번 주사하여 조사하고, 다결정화하는 경우에 있어서 복수회 주사할 때의 중복영역과 비중복영역의 경계를 비직선 형상으로 하는 것을 특징으로 한다.

Description

액정표시장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6a도 및 제6b도는 본 발명의 실시예에 있어서, n열째와 n+1열째의 선 형상 에너지 빔 조사의 중복영역을 나타낸 확대도.

Claims (10)

  1. 기판상에 비정질실리콘층을 형성하는 공정과, 상기 비정질실리콘층에 선 형상 빔을 조사 및 주사하여 비정질실리콘을 다결정실리콘층으로 변환하고 상기 선 형상 에너지 빔의 조사 및 주사는 다결정실리콘층에 변환된 영역전체를 덮도록 그 위치를 이동하여 여러번 실행하는 공정을 구비한 어레이기판을 형성하는 공정; 및 상기 어레이기판과 대향기판을 접착라여 그 간격에 액정을 봉입하는 공정을 구비한 액정표시장치의 제조방법에 있어서, 인접한 각 회수의 단부조사영역이 중복되게 여러번 선 형상 에너지 빔의 주사를 조사하여 중복영역과 비중복영역의 경계가 비직선 형상이 되도록 상기 에너지 빔이 주사되는 것을 특징으로 하는 액정표시장치의 제조방법.
  2. 제2항에 있어서, 상기 선 형상 에너지 밤의 주사는 주사방향에 대해 수직으로 진동시피면서 실행되는 것을 특징으로 하는 액정표시장치의 제조방법.
  3. 제1항에 있어서, 상기 여러번의 주사 가운데, n회째와 n+1회째중 적어도 한쪽이 주사방향에 대해 수직으로 진동하면서 주사, 조사하는 것을 특징으로 하는 액정표시장치의 제조방법.
  4. 제1항에 있어서, 상기 선 형상 에너지 빔은 일정한 방향으로 주사되고, 상기 기판은 주사방향에 대해 수직인 방향으로 진동되는 것을 특징으로 하는 액정표시 장치의 제조방법.
  5. 제1항에 있어서, 선 형상 에너지 빔이 조사된 상기 기판은 기판의주변부에 장축방향으로 대강 평행한 X구동회로부 및 단축방향으로 대강 평행한 Y구동회로부를 갖고, 선 형상 에너지 빔의 주사방향은 적이도 한쪽의 구동회로부에 대강 평행한 것을 특징으로 하는 액정표시장치의 제조방법.
  6. 제5항에 있어서, 적어도 한쪽의 구동회로부에는 선 형상 에너지 빔이 한 번의 주사만으로 조사된 것을 특징으로 하는 액정표시장치의 제조방법.
  7. 제5항에 있어서, 선 형상 에너지 빔의 주사방향은 X구동회로부에 대강 평행한 것을 특징으로 하는 액정표시장치의 제조방법.
  8. 제1항에 있어서, 상기 중복영역과 비중복영역의 경계의 형상은 주기함수곡선에 근사한 것을 특징으로 하는 액정표시장치의 제조방법.
  9. 제1항에 있어서, 상기 선 형상 에너지 빔은 엑시머레이저빔인 것을 특징으로 하는 액정표시장치의 제조방법.
  10. 제1항에 있어서, 상기 선 형상 에너지 빔의 경로에 굴절률 또는 투과율이 변화가능한 복수개의 광변조소자로 이루어진 광변조소자어레이를 배치하고, 선 형상 에너지 빔의 단부에 대응되는 위치에 있는 광변조소자의 굴절률 또는 투과율을 변화시키는 것에 의해 상기 중복영역과 비중복영역의 경계를 비직선적으로 하는 것을 특징으로 하는 액정표시장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970000955A 1996-01-17 1997-01-15 액정표시장치의제조방법 KR100356424B1 (ko)

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JP533596 1996-01-17
JP8-005335 1996-01-17

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KR970059802A true KR970059802A (ko) 1997-08-12
KR100356424B1 KR100356424B1 (ko) 2002-11-18

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