KR970054528A - 에스램(sram) 박막 트랜지스터 제조 방법 - Google Patents

에스램(sram) 박막 트랜지스터 제조 방법 Download PDF

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Publication number
KR970054528A
KR970054528A KR1019950072221A KR19950072221A KR970054528A KR 970054528 A KR970054528 A KR 970054528A KR 1019950072221 A KR1019950072221 A KR 1019950072221A KR 19950072221 A KR19950072221 A KR 19950072221A KR 970054528 A KR970054528 A KR 970054528A
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South Korea
Prior art keywords
thin film
sram
source
film transistor
drain
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KR1019950072221A
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English (en)
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KR100197532B1 (ko
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김진하
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김주용
현대전자산업 주식회사
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Priority to KR1019950072221A priority Critical patent/KR100197532B1/ko
Publication of KR970054528A publication Critical patent/KR970054528A/ko
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Publication of KR100197532B1 publication Critical patent/KR100197532B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야
반도체 소자 제조 방법
2. 발명이 해결하려고 하는 기술적 과제
평판형태의 채널을 가진 종래의 에스램(SRAM) 박막 트랜지스터는 on/off 전류가 모두 큰 값을 가지므로 스탠드 바이 전류의 소모도 크다는 문제점과 박막 트랜지스터의 얇은 평판 모양의 채널의 두께를 조절하기 어렵다는 문제점을 해결하고자 함.
3. 발명의 해결방법의 요지
종래의 풀업 소자로 사용되는 박막 트랜지스터의 평판 모양의 채널을 사각형의 질화막 둘레에 띠 모양으로 형성함으로써 채널의 폭을 줄여 off 전류를 1pA이하의 작은 값으로 유지시켜 on/off 전류비를 향상시킨 에스램(SRAM) 박막 트랜지스터를 제조하고자 함.
4. 발명의 중요한 용도
에스램(SRAM) 박막 트랜지스터를 제조하는데 이용됨.

Description

에스램(SRAM) 박막 트랜지스터 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 내지 제2e도는 본 발명의 에스램(SRAM) 박막 트랜지스터 제조 방법에 따른 공정도.
제3도는 본 발명의 에스램(SRAM) 박막 트랜지스터 제조 방법에 따라 형성된 반도체 소자의 평면도.

Claims (3)

  1. 에스램(SRAM) 박막 트랜지스터를 제조하는 방법에 있어서, 반도체 기판 상에 빌크형 트랜지스터가 형성된 구조상에 제1 테트라-에틸-오소-실리게이트막과 질화막 및 제2 테트라-에틸-오소-실리케이트막을 상기 벌크형 트랜지스터의 게이트 전극과 같은 크기로 형성하는 단계와, 상기 질화막의 일부를 습식식각하고 어닐링을 실시하는 단계와, 소스/드레인용 폴리실리콘을 증착하고 소스/드레인 영역 형성을 위한 이온주입을 블랭킷으로 실시하는 단계와, 소스/드레인이 형성될 영역만 덮인 포토레지스트 패턴을 형성하고 상기 포토레지스트 패턴을 식각 배리어로 이용하여 상기 소스/드레인용 폴리실리콘을 식각한 후, 잔류 포토레지스트를 제거하는 단계와, 게이트 산화막을 형성하고 게이트 전극을 형성한 후 어닐링을 실시하는 단계를 포함하여 이루어진 에스램(SRAM) 박막 트랜지스터 제조 방법.
  2. 제1항에 있어서, 상기 소스/드레인용 폴리실리콘을 증착하는 두께는 약 1500Å인 것을 특징으로 하는 에스램(SRAM) 박막 트랜지스터 제조 방법.
  3. 제1항에 있어서, 상기 게이트 전극 형성시 소스 오버랩 영역과 드레인 오프셋 영역을 형성하는 것을 특징으로 하는 에스램(SRAM) 박막 트랜지스터 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950072221A 1995-12-29 1995-12-29 에스램 박막 트랜지스터 제조 방법 KR100197532B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950072221A KR100197532B1 (ko) 1995-12-29 1995-12-29 에스램 박막 트랜지스터 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950072221A KR100197532B1 (ko) 1995-12-29 1995-12-29 에스램 박막 트랜지스터 제조 방법

Publications (2)

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KR970054528A true KR970054528A (ko) 1997-07-31
KR100197532B1 KR100197532B1 (ko) 1999-07-01

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