KR970030680A - 반도체 제조장치용 부재 - Google Patents

반도체 제조장치용 부재 Download PDF

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Publication number
KR970030680A
KR970030680A KR1019960053706A KR19960053706A KR970030680A KR 970030680 A KR970030680 A KR 970030680A KR 1019960053706 A KR1019960053706 A KR 1019960053706A KR 19960053706 A KR19960053706 A KR 19960053706A KR 970030680 A KR970030680 A KR 970030680A
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South Korea
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group
sic
compound semiconductor
manufacturing
compound
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KR1019960053706A
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English (en)
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KR100413709B1 (ko
Inventor
킬로스카 모한
미찌오 호리우찌
신지 이이노
노보루 하야카와
야스시 이에치카
도시히사 가타미메
요시노부 오노
도모유키 다카다
Original Assignee
모기 쥰이찌
신꼬오덴기 고오교오 가부시끼가이샤
히가시 데츠로
도쿄 일렉트론 가부시키가이샤
고사이 아키오
스미토모가가쿠고교가부시키가이샤
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Application filed by 모기 쥰이찌, 신꼬오덴기 고오교오 가부시끼가이샤, 히가시 데츠로, 도쿄 일렉트론 가부시키가이샤, 고사이 아키오, 스미토모가가쿠고교가부시키가이샤 filed Critical 모기 쥰이찌
Publication of KR970030680A publication Critical patent/KR970030680A/ko
Application granted granted Critical
Publication of KR100413709B1 publication Critical patent/KR100413709B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Led Devices (AREA)

Abstract

본 발명은 화학적 안정성과 기계적 안정성이 우수하기 때문에 화합물 반도체에 적합한 고생산성 제조장치를 제공하는 3족 내지 5족 화합물 반도체의 제조장치용 부재에 관한 것이다.
(1) 화학식 InxGayAlzN의 3족 내지 5족 화합물 반도체(여기서, x+y+z=1, 0≤x≤1, 0≤y≤1 및 0≤z≤1)의 제조장치용 부재에 있어서, 흑연계 물질을 SiC로 전환시켜 수득한 SiC를 포함함을 특징으로 하는 부재.
(2) 화학식 InxGayAlzN의 3족 내지 5족 화합물 반도체(여기서, x+y+z=1, 0≤x≤1, 0≤y≤1 및 0≤z≤1)의 제조장치용 부재에 있어서, 흑연기판의 적어도 표면층 부분이 SiC 로 전환되는 흑연-SiC복합체를 사용함을 특징으로 하는 부재.
(3) (1) 또는 (2)의 3족 내지 5족 화합물 반도체의 제조장치용 부재를 사용함을 특징으로 하는 3족 내지 5족 화합물 반도체의 제조장치.

Description

반도체 제조장치용 부재
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 1은 비교실시예 1 및 실시예 1에서 사용하는 반응기를 설명하는 다이아그램이다.

Claims (5)

  1. 흑연 기재를 SiC로 전환시켜 수득한 SiC를 포함하는, 화학식 InxGayAlzN의 3족 내지 5족 화합물 반도체(여기서, x+y+z=1, 0≤x≤1, 0≤y≤1 및 0≤z≤1)의 제조장치용 부재.
  2. 흑연 기재의 적어도 표면층 부분을 SiC로 전환시켜 수득한 흑연-SiC복합체를 포함하는, 화학식 InxGayAlzN의 3족 내지 5족 화합물 반도체(여기서, x+y+z=1, 0≤x≤1, 0≤y≤1 및 0≤z≤1)의 제조장치용 부재.
  3. 제 1항 또는 제 2항에 있어서, 제 1항 또는 제 2항에 따르는 3족 내지 5족 화합물 반도체 제조장치용 부재와 기타 부재 사이의 접측 부분의 표면 조도가 20㎛ 이하인 3족 내지 5족 화합물 반도체의 제조장치용 부재.
  4. 제 1항 내지 제 2항에 있어서, SiC로 전환된 층의 두께가 표면으로부터 500㎛ 이상인 3족 내지 5족 화합물 반도체의 제조장치용 부재.
  5. 제 1항 내지 제 4항 중 어느 한 항에 따르는 3족 내지 5족 화합물 반도체의 제조장치용 부재를 사용함을 특징으로 하는 3족 내지 5족 화합물 반도체의 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960053706A 1995-11-14 1996-11-13 반도체제조장치용부재 KR100413709B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-295433 1995-11-14
JP29543395 1995-11-14
JP300973 1995-11-20
JP95-331153 1995-11-27

Publications (2)

Publication Number Publication Date
KR970030680A true KR970030680A (ko) 1997-06-26
KR100413709B1 KR100413709B1 (ko) 2004-04-13

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Country Status (7)

Country Link
US (1) US5980632A (ko)
JP (1) JPH09199434A (ko)
KR (1) KR100413709B1 (ko)
DE (1) DE19646976A1 (ko)
GB (1) GB2307337B (ko)
SG (1) SG47194A1 (ko)
TW (1) TW456052B (ko)

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JP2000058462A (ja) * 1998-08-13 2000-02-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
JP4211201B2 (ja) * 1999-05-10 2009-01-21 住友化学株式会社 半導体製造装置用摺動部材および半導体製造装置
TW589396B (en) * 2003-01-07 2004-06-01 Arima Optoelectronics Corp Chemical vapor deposition reactor
GB2415707A (en) 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
JP5099576B2 (ja) * 2006-02-23 2012-12-19 株式会社Ｉｈｉ 化合物半導体の活性化方法及び装置
GB0702560D0 (en) 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
GB2460898B (en) 2008-06-19 2012-10-10 Wang Nang Wang Production of semiconductor material and devices using oblique angle etched templates
KR101118268B1 (ko) * 2009-08-27 2012-03-20 한국산업기술대학교산학협력단 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
JP2013187366A (ja) * 2012-03-08 2013-09-19 Hitachi Cable Ltd 窒化物半導体の製造方法

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Publication number Publication date
GB9623538D0 (en) 1997-01-08
DE19646976A1 (de) 1997-05-15
GB2307337B (en) 2000-10-18
GB2307337A (en) 1997-05-21
SG47194A1 (en) 1998-03-20
US5980632A (en) 1999-11-09
TW456052B (en) 2001-09-21
KR100413709B1 (ko) 2004-04-13
JPH09199434A (ja) 1997-07-31

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