SG47194A1 - Member for production device of semiconductor - Google Patents

Member for production device of semiconductor

Info

Publication number
SG47194A1
SG47194A1 SG1996011103A SG1996011103A SG47194A1 SG 47194 A1 SG47194 A1 SG 47194A1 SG 1996011103 A SG1996011103 A SG 1996011103A SG 1996011103 A SG1996011103 A SG 1996011103A SG 47194 A1 SG47194 A1 SG 47194A1
Authority
SG
Singapore
Prior art keywords
semiconductor
production device
production
Prior art date
Application number
SG1996011103A
Other languages
English (en)
Inventor
Yasushi Iyechika
Toshihisa Katamime
Yoshinobu Ono
Tomoyuki Takada
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG47194A1 publication Critical patent/SG47194A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Led Devices (AREA)
SG1996011103A 1995-11-14 1996-11-13 Member for production device of semiconductor SG47194A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29543395 1995-11-14

Publications (1)

Publication Number Publication Date
SG47194A1 true SG47194A1 (en) 1998-03-20

Family

ID=17820543

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996011103A SG47194A1 (en) 1995-11-14 1996-11-13 Member for production device of semiconductor

Country Status (7)

Country Link
US (1) US5980632A (ko)
JP (1) JPH09199434A (ko)
KR (1) KR100413709B1 (ko)
DE (1) DE19646976A1 (ko)
GB (1) GB2307337B (ko)
SG (1) SG47194A1 (ko)
TW (1) TW456052B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058462A (ja) * 1998-08-13 2000-02-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
JP4211201B2 (ja) * 1999-05-10 2009-01-21 住友化学株式会社 半導体製造装置用摺動部材および半導体製造装置
TW589396B (en) * 2003-01-07 2004-06-01 Arima Optoelectronics Corp Chemical vapor deposition reactor
GB2415707A (en) 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
JP5099576B2 (ja) * 2006-02-23 2012-12-19 株式会社Ｉｈｉ 化合物半導体の活性化方法及び装置
GB0702560D0 (en) 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
GB2460898B (en) 2008-06-19 2012-10-10 Wang Nang Wang Production of semiconductor material and devices using oblique angle etched templates
KR101118268B1 (ko) * 2009-08-27 2012-03-20 한국산업기술대학교산학협력단 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
JP2013187366A (ja) * 2012-03-08 2013-09-19 Hitachi Cable Ltd 窒化物半導体の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816166A (en) * 1970-03-11 1974-06-11 Philips Corp Vapor depositing method
FR2601008B1 (fr) * 1986-07-03 1990-03-30 Sanofi Sa Procede de synthese stereospecifique de derives de l'indole
JPS63225591A (ja) * 1987-03-12 1988-09-20 住友金属工業株式会社 炭化珪素被覆黒鉛材料の製造方法
JPH01145400A (ja) * 1987-11-30 1989-06-07 Toshiba Ceramics Co Ltd シリコンウェハー加熱用治具
US4986215A (en) * 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
JPH03225591A (ja) * 1990-01-31 1991-10-04 Kubota Corp 自動販売機の商品払い出し装置
NL9000973A (nl) * 1990-04-24 1991-11-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5121531A (en) * 1990-07-06 1992-06-16 Applied Materials, Inc. Refractory susceptors for epitaxial deposition apparatus
JPH05175317A (ja) * 1991-12-24 1993-07-13 Ibiden Co Ltd プラズマｃｖｄ用のサセプタ
JP3482480B2 (ja) * 1993-01-25 2003-12-22 東洋炭素株式会社 耐酸化性に優れた黒鉛−炭化珪素複合体及びその製造方法
KR970004500B1 (ko) * 1993-10-30 1997-03-28 삼성전자 주식회사 반도체 레이저 장치

Also Published As

Publication number Publication date
KR970030680A (ko) 1997-06-26
DE19646976A1 (de) 1997-05-15
KR100413709B1 (ko) 2004-04-13
GB2307337B (en) 2000-10-18
JPH09199434A (ja) 1997-07-31
GB9623538D0 (en) 1997-01-08
GB2307337A (en) 1997-05-21
US5980632A (en) 1999-11-09
TW456052B (en) 2001-09-21

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