GB2330004B - Process of fabricating semiconductor device - Google Patents

Process of fabricating semiconductor device

Info

Publication number
GB2330004B
GB2330004B GB9900317A GB9900317A GB2330004B GB 2330004 B GB2330004 B GB 2330004B GB 9900317 A GB9900317 A GB 9900317A GB 9900317 A GB9900317 A GB 9900317A GB 2330004 B GB2330004 B GB 2330004B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9900317A
Other versions
GB9900317D0 (en
GB2330004A (en
Inventor
Toshiyuki Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7009834A external-priority patent/JP2817645B2/en
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9900317D0 publication Critical patent/GB9900317D0/en
Publication of GB2330004A publication Critical patent/GB2330004A/en
Application granted granted Critical
Publication of GB2330004B publication Critical patent/GB2330004B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
GB9900317A 1995-01-25 1996-01-25 Process of fabricating semiconductor device Expired - Lifetime GB2330004B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7009834A JP2817645B2 (en) 1995-01-25 1995-01-25 Method for manufacturing semiconductor device
GB9601519A GB2297427B (en) 1995-01-25 1996-01-25 Process of fabricating semiconductor device

Publications (3)

Publication Number Publication Date
GB9900317D0 GB9900317D0 (en) 1999-02-24
GB2330004A GB2330004A (en) 1999-04-07
GB2330004B true GB2330004B (en) 1999-08-11

Family

ID=26308527

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9900317A Expired - Lifetime GB2330004B (en) 1995-01-25 1996-01-25 Process of fabricating semiconductor device

Country Status (1)

Country Link
GB (1) GB2330004B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795313B2 (en) * 1996-05-08 1998-09-10 日本電気株式会社 Capacitive element and method of manufacturing the same
US20040201049A1 (en) * 2003-04-11 2004-10-14 Stefan Gernhardt Suppression of electrode re-crystallisation in a ferrocapacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0557590A1 (en) * 1992-02-28 1993-09-01 Samsung Electronics Co. Ltd. Method for manufacturing a capacitor of a semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0557590A1 (en) * 1992-02-28 1993-09-01 Samsung Electronics Co. Ltd. Method for manufacturing a capacitor of a semiconductor device

Also Published As

Publication number Publication date
GB9900317D0 (en) 1999-02-24
GB2330004A (en) 1999-04-07

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20141212 AND 20141217

PE20 Patent expired after termination of 20 years

Expiry date: 20160124