KR970030297A - 세로형 확산 및 기상 성장로용의 웨이퍼 보트 - Google Patents

세로형 확산 및 기상 성장로용의 웨이퍼 보트 Download PDF

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KR970030297A
KR970030297A KR1019960053631A KR19960053631A KR970030297A KR 970030297 A KR970030297 A KR 970030297A KR 1019960053631 A KR1019960053631 A KR 1019960053631A KR 19960053631 A KR19960053631 A KR 19960053631A KR 970030297 A KR970030297 A KR 970030297A
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South Korea
Prior art keywords
wafers
wafer
supporting
support
wafer boat
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KR1019960053631A
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KR100235078B1 (ko
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도모히사 기따노
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

본 발명은 다수의 웨이퍼(8)를 상하로 간격을 두고 서로 지지하는 구조를 갖는 웨이퍼 보트(6)를 개시한다. 이 구조는 웨이퍼들의 둘레 위치들에서 웨이퍼들의 주면들에 대해 거의 수직하게 적합하여 배치된 다수의 지주(9)와, 각각의 지주로부터 각각 횡방향으로 연장하며, 웨이퍼의 이면(11)을 웨이퍼 반경의 2/3에 해당하는 거리만큼 웨이퍼의 중심으로부터 떨어진 그의 위치들에서 지지하는 다수의 지지봉(10)을 포함한다. 웨이퍼들은 (001)-웨이퍼들일 수 있으며, 지지봉들(10)은 웨이퍼 이면(11)을 <100> 또는 <110> 결정 방위에 대응하는 그의 위치들에서 지지할 수 있다. 이러한 구조는 웨이퍼의 자중으로 인해 발생된 응력의 감소를 가능케 한다.

Description

세로형 확산 및 기상 성장로용의 웨이퍼 보트
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제8도는 본 발명의 실시예1을 설명하기 위한 웨이퍼 보느를 나타내는 평면도.

Claims (5)

  1. 다수의 웨이퍼(8)를 상하로 간격을 두고 서로 지지하는 구조를 갖는 세로형로용 웨이퍼 보트(6)로서, 상기 웨이퍼들의 둘레 위치들에서 상기 웨이퍼들이 주면들에 대해 거의 수직하게 직립하여 배치된 다수의 지주(9)와, 각각의 상기 지주로부터 각각 횡방향으로 연장하며, 각각의 상기 웨이퍼의 이면(11)을 웨이퍼 반경의 2/3에 해당하는 거리만큼 웨이퍼의 중심으로부터 떨어진 그의 위치들에서 지지하는 다수의 지지봉(10)을 구비하는 것을 특징으로 하는 세로형로용의 웨이퍼 보트
  2. 제1항에 있어서, 상기 웨이퍼들은 (001)-웨이퍼들이고, 상기 지지봉들은 상기 웨이퍼들의 상기 이면들을 <100> 및 <110> 결정 방위들중 하나에 대응하는 그의 위치들에서 지지하는 것을 특징으로 하는 웨이퍼 보트.
  3. 제2항에 있어서, 상기 지지봉들은 상기 웨이퍼들의 상기 이면들을 점접촉하여 지지하는 둥근 돌출부들(12)을 갖는 것을 특징으로 하는 웨이퍼 보트.
  4. 제2항에 있어서, 상기 지지봉들은 상기 웨이퍼들의 상기 이면들을 선접촉하여 지지하는 돌출 호선부들(13)을 갖는 것을 특징으로 하는 웨이퍼 보트.
  5. 제2항에 있어서, 상기 지지봉들은 상기 웨이퍼들의 상기 이면들을 면접촉하여 지지하는 링들(14)을 갖는 것을 특징으로 하는 웨이퍼 보트.
KR1019960053631A 1995-11-15 1996-11-13 세로형 확산 및 기상 성장로용의 웨이퍼 보트 KR100235078B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-297004 1995-11-15
JP29700495A JPH09139352A (ja) 1995-11-15 1995-11-15 縦型炉用ウェーハボート

Publications (2)

Publication Number Publication Date
KR970030297A true KR970030297A (ko) 1997-06-26
KR100235078B1 KR100235078B1 (ko) 1999-12-15

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KR1019960053631A KR100235078B1 (ko) 1995-11-15 1996-11-13 세로형 확산 및 기상 성장로용의 웨이퍼 보트

Country Status (3)

Country Link
US (1) US5779797A (ko)
JP (1) JPH09139352A (ko)
KR (1) KR100235078B1 (ko)

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KR100424428B1 (ko) * 1998-09-28 2004-03-24 가부시키가이샤 히타치세이사쿠쇼 종형로 및 종형로용 웨이퍼보트

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JP6303592B2 (ja) * 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424428B1 (ko) * 1998-09-28 2004-03-24 가부시키가이샤 히타치세이사쿠쇼 종형로 및 종형로용 웨이퍼보트

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Publication number Publication date
KR100235078B1 (ko) 1999-12-15
JPH09139352A (ja) 1997-05-27
US5779797A (en) 1998-07-14

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