KR970024326A - 급속열처리 방법을 이용한 CdTe박막 및 CdTe/CdS 태양전지 제조방법 - Google Patents
급속열처리 방법을 이용한 CdTe박막 및 CdTe/CdS 태양전지 제조방법 Download PDFInfo
- Publication number
- KR970024326A KR970024326A KR1019950034275A KR19950034275A KR970024326A KR 970024326 A KR970024326 A KR 970024326A KR 1019950034275 A KR1019950034275 A KR 1019950034275A KR 19950034275 A KR19950034275 A KR 19950034275A KR 970024326 A KR970024326 A KR 970024326A
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- Prior art keywords
- cdte
- thin film
- solar cell
- heat treatment
- cdte thin
- Prior art date
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title claims abstract 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract 10
- 238000010438 heat treatment Methods 0.000 title claims abstract 9
- 238000000034 method Methods 0.000 claims abstract description 15
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims abstract 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims abstract 2
- 239000003638 chemical reducing agent Substances 0.000 claims abstract 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 3
- 238000007669 thermal treatment Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000000427 thin-film deposition Methods 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000012153 distilled water Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical class [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 230000000704 physical effect Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
본 발명은 급속열처리를 한 CdTe박막을 이용하는 ITO(또는 SnO2: F)/CdS/CdTe/Au 태양전지의 제조방법에 관한 것이다.
또한 본 발명은 CdTe박막형 태양전지의 제조시에 CdTe박막층을 급속열처리 방법으로 처리하여 박막의 물성을 개선시키고 효율이 높은 태양전지를 제조하는 방법을 제공한다.
본발명의 방법에 의해, CdS박막위에 제조된 CdTe 박막층을 크롬산염의 부식용액에 의한 식각, 히드라진 수화물의 환원제에 의해 산화층을 제거한 CdTe박막형 태양전지가 제조된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 방법에 의한 CdTe/CdS태양전지의 구조를 나타내는 개략도이다.
Claims (6)
- ITO(In2O3-SnO2)투명전도성 유리 및 실리콘 산화막으로된 200℃∼300℃의 기판상에 CdS 및 CdTe 박막을 증착시키는 CdS 및 CdTe 박막 증착과정과; 상기과정에 의해 증착한다음 아르곤 가스의 분위기하에 400℃∼600℃로 1∼2분간 급속열처리하는 급속열처리과정과, 상기과정에 의하여 열처리한후 상기 박막의 표면상의 불순물을 제거하고 표면성 분비를 변화시키기 위해 2∼20%의 크롬산 용액으로 화학적 식각처리를 행하고 환원제로서 히드라진 수화물로 산화막을 제거하는 산화막 제거과정과; 상기과정에서 산화막을 제거한다음 증류수로 세정한후 N2건으로 건조시키는 건조과정과; 상기 과정을 거친후 배선금속으로 Au를 사용하여 증착시킨후 건조기에서 열처리하는 열처리과정을 갖는것을특징으로 하는 급속열처리한 CdTe박막을 이용하는 CdTe/CdS 태양전지의 제조방법.
- 제 1 항에 있어서, 급속 열처리과정은 질소가스 분위기하에서 열처리함을 더포함 한것을 특징으로하는 급속열처리한 CdTe박막은 이용하는 CdTe/CdS 태양전지의 제조방법.
- 제 1 항에 있어서, 상기 CdTe 박막의 증착공정은 가열증착법으로 증착한것을 특징으로 하는 급속열처리를 한 CdTe박막을 이용하는 CdTe/CdS 태양전지의 제조방법.
- 제 1 항에 있어서, 상기 CdTe 박막의 증착공정은 전자빔증착법으로 증착한것을 특징으로 하는 급속열처리를 한 CdTe박막을 이용하는 CdTe/CdS 태양전지의 제조방법.
- 제 1 항에 있어서, 상기 CdTe 박막의 증착공정은 스퍼터링법으로 증착한것을 특징으로 하는 급속열처리를 한 CdTe박막을 이용하는 CdTe/CdS 태양전지의 제조방법.
- 제 1 항에 있어서, 상기 CdTe 박막의 증착공정이외의 전착법으로 제조한 것을 특징으로 하는 급속열처리를 한 CdTe박막을 이용하는 CdTe/CdS 태양전지와 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950034275A KR0179332B1 (ko) | 1995-10-06 | 1995-10-06 | 급속 열처리를 한 CdTe 박막을 이용하는 CdTe/CdS 태양전지의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950034275A KR0179332B1 (ko) | 1995-10-06 | 1995-10-06 | 급속 열처리를 한 CdTe 박막을 이용하는 CdTe/CdS 태양전지의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970024326A true KR970024326A (ko) | 1997-05-30 |
| KR0179332B1 KR0179332B1 (ko) | 1999-03-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950034275A KR0179332B1 (ko) | 1995-10-06 | 1995-10-06 | 급속 열처리를 한 CdTe 박막을 이용하는 CdTe/CdS 태양전지의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0179332B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100348702B1 (ko) * | 1999-12-28 | 2002-08-13 | 주식회사 루밴틱스 | 급속 열처리 방법에 의한 도전성 투명 박막의 제조방법 및 그 방법에 의해 제조된 도전성 투명 박막 |
-
1995
- 1995-10-06 KR KR1019950034275A patent/KR0179332B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0179332B1 (ko) | 1999-03-20 |
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