KR970018235A - 반도체소자의 금속배선 형성방법 - Google Patents

반도체소자의 금속배선 형성방법 Download PDF

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Publication number
KR970018235A
KR970018235A KR1019950032741A KR19950032741A KR970018235A KR 970018235 A KR970018235 A KR 970018235A KR 1019950032741 A KR1019950032741 A KR 1019950032741A KR 19950032741 A KR19950032741 A KR 19950032741A KR 970018235 A KR970018235 A KR 970018235A
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South Korea
Prior art keywords
metal wiring
forming
semiconductor device
unevenness
etching
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KR1019950032741A
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English (en)
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KR0171945B1 (ko
Inventor
설여송
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김주용
현대전자산업 주식회사
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Priority to KR1019950032741A priority Critical patent/KR0171945B1/ko
Publication of KR970018235A publication Critical patent/KR970018235A/ko
Application granted granted Critical
Publication of KR0171945B1 publication Critical patent/KR0171945B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

본 발명은 반도체소자의 금속배선 형성방법에 관한 것으로, 하부절연층이 형성된 반도체기판 상부에 요철을 형성하고 그 상부에 금속배선재료를 형성한 다음, 금속배선마스크를 이용한 건식식각공정으로 상기 금속배선 재료와 요철을 순차적으로 식각하고 식각공정시 발생되는 식각잔유물을 습식방법으로 제거한 다음, 세척 및 건조공정을 실시하여 반도체기판과 금속배선의 접착력이 향상된 금속배선을 형성함으로써 금속배선의 손상을 방지하여 반도체소자의 수율 및 생산성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 기술이다.

Description

반도체소자의 금속배선 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A도 및 제2B도는 본 발명의 실시예에 따른 반도체소자의 금속배선 형성방법을 도시한 단면도.

Claims (2)

  1. 하부절연층이 형성된 반도체기판 상부에 요철을 형성하는 공정과, 전체표면상부에 금속배선재료를 형성하는 공정과, 금속배선마스크를 이용한 식각공정으로 상기 금속배선재료와 요철을 순차적으로 식각하되 플라즈마를 이용한 건식방법으로 식각하는 공정과, 상기 식각공정시 발생되는 식각잔유물을 습식방법으로 제거하고 세척 및 건조함으로써 금속배선을 형성하는 공정을 포함하는 반도체소자의 금속배선 형성방법.
  2. 제1항에 있어서, 상기 요철은 실리콘을 함유하는 알루미늄합금을 증착하고 습식방법으로 상기 알루미늄을 제거하여 형성되는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950032741A 1995-09-29 1995-09-29 반도체소자의 금속배선 형성방법 KR0171945B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950032741A KR0171945B1 (ko) 1995-09-29 1995-09-29 반도체소자의 금속배선 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950032741A KR0171945B1 (ko) 1995-09-29 1995-09-29 반도체소자의 금속배선 형성방법

Publications (2)

Publication Number Publication Date
KR970018235A true KR970018235A (ko) 1997-04-30
KR0171945B1 KR0171945B1 (ko) 1999-03-30

Family

ID=19428427

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032741A KR0171945B1 (ko) 1995-09-29 1995-09-29 반도체소자의 금속배선 형성방법

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KR (1) KR0171945B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689004B (zh) 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
WO2016007874A1 (en) 2014-07-11 2016-01-14 Applied Materials, Inc. Supercritical carbon dioxide process for low-k thin films
KR102314667B1 (ko) 2015-10-04 2021-10-20 어플라이드 머티어리얼스, 인코포레이티드 작은 열 질량의 가압 챔버
JP6556945B2 (ja) 2015-10-04 2019-08-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持とバッフルの装置
CN108140549B (zh) 2015-10-04 2022-12-20 应用材料公司 缩减空间的处理腔室
WO2017062135A1 (en) 2015-10-04 2017-04-13 Applied Materials, Inc. Drying process for high aspect ratio features

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Publication number Publication date
KR0171945B1 (ko) 1999-03-30

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