KR970011885A - 반도체 집적회로의 시험 방법 및 장치 - Google Patents

반도체 집적회로의 시험 방법 및 장치 Download PDF

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KR970011885A
KR970011885A KR1019960033541A KR19960033541A KR970011885A KR 970011885 A KR970011885 A KR 970011885A KR 1019960033541 A KR1019960033541 A KR 1019960033541A KR 19960033541 A KR19960033541 A KR 19960033541A KR 970011885 A KR970011885 A KR 970011885A
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integrated circuit
semiconductor integrated
power supply
supply current
test
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KR100205838B1 (ko
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마사유기 에히로
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쯔지 하루오
샤프 가부시끼가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequences
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/02—Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
    • G01R31/31924—Voltage or current aspects, e.g. driver, receiver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

본 발명은 CMOS 회로를 포함하는 반도체 직접회로의 시험 방법 및 시험 장치에 관한 것으로, CMOS를 포함하는 반도체 직법회로의 양부 판정을 단시간에 또 간단한 구성으로 행한다.
시험 장치(1)의 전원(7)으로부터 DUT(2)이 전원 전압 단자 VDD에 전원 전원 전류를 공급하는 경로의 도중에 전류 검출용 저항(11)을 삽입하고, 그 양단의 전위차로부터 전원 전류에 포함되는 DUT(2)내의 CMOS 회로의 상태 천이에 수반하는 펄스 모양의 변화를 검출한다. 펄스 모양의 변화 수는 카운터(10)에 의해 계수된다. DUT(2)에는 드라이버(5)로부터 시험 패턴이 인가되어, 시험 패턴에 대응하여 미리 설정되는 기대값과 카운터 (10)의 계수값이 비교되어 DUT(2)가 양품인지 아닌지가 판정된다. 전류 검출용 저항(11)이 검출할 펄스 모양의 천이에 수반하는 전류는, DUT(2)내의 CMOS 회로가 정지상태일 때 흐르는 전류에 비교하여 크기 때문에, 전류 검출용 저항(11)의 저항값을 작게 할 수가 있어 시험에 요하는 시간을 단축할 수 있다.

Description

반도체 직접회로의 시험 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시형태의 개략적인 전기적 구성을 도시하는 블록도,
제2도는 제1도의 구성의 동작을 도시하는 타이밍 차트,
제5도는 본 발명의 제2실시형태의 개략적인 전기적 구성을 도시하는 블록도,
제6도는 제5도의 구성의 동작을 도시하는 타이밍 차트.

Claims (7)

  1. CMOS를 포함하는 반도체 집적회로에 미리 정해진 복수의 패턴으로 이루어지는 시험 패턴을 인가하면서, 반도체 집적회로의 전원 전류중에 포함되는 미리 정한 기준을 초과하는 펄스 신호를 계수하여, 미리 설정된 기대값과 비교하는 것을 특징으로 하는 반도체 집적회로의 시험방법.
  2. 제1항에 있어서, 각 패턴 인가후의 상태변화마다, 순차적으로 실시간으로 그 계수값을 미리 시험 패턴에 대응하여 산출되는 기댓값과 비교하는 것을 특징으로 하는 반도체 집적회로의 시험 방법.
  3. 제1항에 있어서, 시험 패턴의 인가후, 그 최종 계수값을 미리 시험 패턴에 대응하여 산출되는 기대값과 비교하는 것을 특징으로 하는 반도체 집적회로의 시험 방법.
  4. 제2항에 있어서, 상기 전원 전류중의 펄스 신호의 계수는, 전원 전류 공급 경로에 전원 전류 검출용 저항을 개재시켜, 그 양단의 전위차를 레벨 변환하여 카운타에 입력하는 것에 의해 행하는 것을 특징으로 하는 반도체 집적회로의 시험방법.
  5. 제3항에 있어서, 상기 전원 전류중의 펄스 신호의 계수는, 전원 전류 공급 경로에 전원 전류 검출용 저항을 개재시켜, 그 양단의 전위차를 레벨 변환하여 카운타에 입력하는 것에 의해 행하는 것을 특징으로 하는 반도체 집적회로의 시험방법
  6. CMOS를 포함하는 반도체 집적회로에 미리 정해진 복수의 패턴으로 이루어지는 시험 패턴을 발생하여 입력시키는 패턴 발생 수단과, 상기 반도체 집적회로의 전원 전류를 검출하는 검출 수단과, 검출 수단이 검출하는 전원 전류의 미리 정한 기준을 초과하는 펄스 모양의 변화를 계수하는 계수 수단과, 계수 수단의 계수값을 상기 패턴 발생 수단이 발생하는 시험 패턴에 대응하여 미리 산출되는 기대값과 비교하는 비교 수단을 포함하는 것을 특징으로 하는 반도체 집적회로의 시험 장치.
  7. 제6항에 있어서, 상기 검출 수단은, 전원 전류가 흐르는 경로에 삽입되는 검출용 저항을 구비하고, 검출용 저항 양단의 전위차를 레벨 변환한 신호를 도출하고, 상기 계수 수단은 패턴 발생수단으로부터 시험 패턴 중의 각 패턴이 발생될 때 리셋되고 검출 수단으로부터 송출되는 신호가 미리 정한 기준 레벨을 초과할 때 세트되는 래치 회로와, 래치 회로의 리셋 상태 및 세트 상태간의 상태 천이의 회수를 계수하는 카운터를 구비하는 것을 특징으로 하는 반도체 집적회로의 시험 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960033541A 1995-08-14 1996-08-13 반도체 집적회로의 시험 방법 및 장치 Expired - Fee Related KR100205838B1 (ko)

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JP95-207101 1995-08-14
JP20710195A JP3233559B2 (ja) 1995-08-14 1995-08-14 半導体集積回路のテスト方法および装置

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US (1) US5760599A (ko)
JP (1) JP3233559B2 (ko)
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JPH0954140A (ja) 1997-02-25
TW299399B (ko) 1997-03-01
US5760599A (en) 1998-06-02
JP3233559B2 (ja) 2001-11-26
KR100205838B1 (ko) 1999-07-01

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