KR970004078A - 반도체소자 및 그 제조방법 - Google Patents

반도체소자 및 그 제조방법 Download PDF

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KR970004078A
KR970004078A KR1019950018864A KR19950018864A KR970004078A KR 970004078 A KR970004078 A KR 970004078A KR 1019950018864 A KR1019950018864 A KR 1019950018864A KR 19950018864 A KR19950018864 A KR 19950018864A KR 970004078 A KR970004078 A KR 970004078A
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silicon substrate
forming
oxide film
sidewall
silicon
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KR1019950018864A
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KR0164079B1 (ko
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박찬광
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김주용
현대전자산업 주식회사
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Priority to US08/670,167 priority patent/US5773330A/en
Priority to CN96106746A priority patent/CN1047872C/zh
Priority to JP8171234A priority patent/JPH0923010A/ja
Publication of KR970004078A publication Critical patent/KR970004078A/ko
Priority to US09/028,865 priority patent/US6104065A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 실리콘 기판위에 절연 역활을 하는 실리콘 산화막을 형성하고, 그 위에 실제 사용되는 실리콘기판 예를들어 단결정 실리콘층을 형성하고, 여기에 MOSFET를 제조하는 방법으로 소자의 분리 기술이 용이하고, 소자의 전기적인 특성이 우수한(SOI(silicon on insulator)구조를 갖는 반도체 소자 및 그 제조방법에 관한 것이다.

Description

반도체소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3A도 및 제3B도는 본 발명에 의해 제조된 SOI MOSFET 구조를 도시한 단면도, 제4도 내지 제7도는 본 발명의 제1실시예에 따라 SOI MOSFET를 제조하는 단계는 도시한 단면도.

Claims (11)

  1. SOI 구조를 갖는 MOSFET 소자에 있어서, 제1 실리콘기판의 상부에 제1실리콘 산화막이 형성되고, 제1 실리콘 산화막 상부의 액티브 지역에 단면의 형상이 사다리꼴 형태로 이루어진 제2 실리콘 기판이 형성되고, 제2 실리콘기판의 측면에 측벽 절연막이 형성되고, 제2 실리콘기판의 상부에 게이트 산화막과 게이트 전극이 일정 폭을 가지고 일정방향으로 형성되고, 상기 게이트 전극이 오버랩 되지 않은 지역의 제2 실리콘기판에는 오소스/드레인 확산영역이 형성되는 것을 특징으로 하는 반도체소자.
  2. 제1항에 있어서, 상기 측벽 절연막은 제2 실리콘 기판과는 반대 타입의 불순물이 도프된 것을 특징으로 하는 반도체 소자.
  3. 제1항에 있어서, 상기 측벽 절연막과 제2 실리콘기판 사이에 도핑영역이 구비된 것을 특징으로 하는 반도체 소자.
  4. 제1항에 있어서, 제2 실리콘 기판의 측벽에는 측벽 절연막과 측벽 다결정실리콘층이 구비된 것을 특징으로 하는 반도체 소자.
  5. SOI 구조를 갖는 MOSFET 제조방법에 있어서, 제1 실리콘기판 상부에 제1 실리콘 산화막과 제2 실리콘 기판층을 증착하는 단계와, 제1 실리콘 산화막 상부의 액티브 지역에 단면의 형상이 사다리꼴 형태로 이루어진 제2 실리콘 기판을 형성하는 단계와, 제2 실리콘기판을 측벽에 측벽 실리콘 산화막을 형성하는 단계와, 노출된 제2 실리콘 기판 상부에게이트 산화막과 게이트 전극을 형성하는 단계와, 고농고 불순물을 노출되는 제2 실리콘 기판으로 이온주입하여 소오스/드레인 확산영역을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자 제조방법.
  6. SOI 구조를 갖는 MOSFET 제조방법에 있어서, 제1 실리콘기판 상부에 제1 실리콘 산화막과 제2 실리콘 기판층을 증착하는 단계와, 제1 실리콘 산화막 상부의 액티브 지역에 단면의 형상이 사다리꼴 형태로 이루어진 제2 실리콘 기판을 형성하는 단계와, 제2 실리콘기판의 측벽에 제2 실리콘 기판과는 다른 타입의 불순물이 도프된 측벽 절연막을 형성하는 단계와, 열처리 공정으로 상기 측벽 절연막에 도프된 불순물을 상기 제2 실리콘기판의 측벽으로 확산시켜 도핑영역을 형성하는 단계와, 노출된 제2 실리콘 기판 상부에 게이트 산화막과 게이트 전극을 형성하는 단계와, 고농도 불순물을노출된 제2 실리콘 기판으로 이온주입하여 소오스/드레인 확산영역을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
  7. 제6항에 있어서, 상기 열처리공정을 800 내지 1100℃에서 진행하는 것을 특징으로 하는 반도체 소자의 제조방법.
  8. 제6항에 있어서, 상기 열처리 공정은 생략하고, 후속공정의 고온공정에서 측벽 절연막에 도프된 불순물을제2 실리콘 기판의 측벽으로 확산시켜 도핑영역을 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
  9. SOI 구조를 갖는 MOSFET 제조방법에 있어서, 제1 실리콘기판 상부에 제1 실리콘 산화막과 제2 실리콘 기판층을 증착하는 단계와, 제1 실리콘 산화막 상부의 액티브 지역에 단면의 형상이 사다리꼴 형태로 이루어진 제2 실리콘 기판을 형성하는 단계와, 제2 실리콘기판의 상부에 절연막과 불순물이 도핑된 다결정실리콘층을 증착하는 단계와, 상기 다결정실리콘층과 그 하부의 절연막을 이방성 식각하여 상기 제2 실리콘기판의 측면에 측벽 산화막과 측벽 다결정실리콘층을 형성하는 단계와, 노출된 제2 실리콘 기판 상부에 게이트 산화막과 게이트 전극을 형성하는 단계와, 고농도 불순물을이온주입하여 소오스/드레인 확산영역을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
  10. 제9항에 있어서, 상기 측벽 다결정실리콘층은 제2 실리콘 기판과는 반대 타입의 불순물이 도핑되는 것을 특징으로 하는 반도체 소자의 제조방법.
  11. 제9항에 있어서, 도핑된 다결정실리콘층을 증착하는 대신에 다결정실리콘층을 증착한 후 이온주입하는 것을 특징으로 하는 반도체 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950018864A 1995-06-30 1995-06-30 반도체 소자 및 그 제조방법 KR0164079B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019950018864A KR0164079B1 (ko) 1995-06-30 1995-06-30 반도체 소자 및 그 제조방법
US08/670,167 US5773330A (en) 1995-06-30 1996-06-27 Semiconductor device and method for fabricating the same
CN96106746A CN1047872C (zh) 1995-06-30 1996-07-01 半导体器件及其制造方法
JP8171234A JPH0923010A (ja) 1995-06-30 1996-07-01 半導体素子及びその製造方法
US09/028,865 US6104065A (en) 1995-06-30 1998-02-03 Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure

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KR1019950018864A KR0164079B1 (ko) 1995-06-30 1995-06-30 반도체 소자 및 그 제조방법

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KR0164079B1 KR0164079B1 (ko) 1998-12-01

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KR100331559B1 (ko) * 1999-10-22 2002-04-06 윤종용 소이 구조의 반도체 소자 및 그 제조방법

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US6777254B1 (en) 1999-07-06 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6562671B2 (en) * 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
TWI418036B (zh) * 2006-12-05 2013-12-01 Semiconductor Energy Lab 半導體裝置及其製造方法
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US5773330A (en) 1998-06-30
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KR0164079B1 (ko) 1998-12-01
US6104065A (en) 2000-08-15

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