KR970003630A - 반도체소자의 금속배선간 절연막의 제조방법 - Google Patents

반도체소자의 금속배선간 절연막의 제조방법 Download PDF

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KR970003630A
KR970003630A KR1019950017677A KR19950017677A KR970003630A KR 970003630 A KR970003630 A KR 970003630A KR 1019950017677 A KR1019950017677 A KR 1019950017677A KR 19950017677 A KR19950017677 A KR 19950017677A KR 970003630 A KR970003630 A KR 970003630A
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insulating film
film
semiconductor device
manufacturing
metal
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KR1019950017677A
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KR0159016B1 (ko
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이승무
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김주용
현대전자산업 주식회사
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Priority to KR1019950017677A priority Critical patent/KR0159016B1/ko
Priority to TW085106271A priority patent/TW297924B/zh
Priority to US08/660,151 priority patent/US6060382A/en
Priority to JP8152660A priority patent/JP2857369B2/ja
Priority to CN96108235A priority patent/CN1056468C/zh
Publication of KR970003630A publication Critical patent/KR970003630A/ko
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Abstract

본 발명은 반도체소자의 금속배선간 절연막의 제조방법에 관한 것으로서, 금속배선이 되는 도전패턴을 절연막상에 형성한후에 상기 구조의 표면을 플라즈마로 처리한 후, SiH4-N2O 혼합 가스를 사용한 굴절율 1.47 이상의 Si 과함유 산화막을 상기 구조의 전표면에 형성하며, 상기 산화막상에 O3-TEOS막을 형성하여 금속배선간 절연막을 완성하였으므로, O3-TEOS막의성장 속도가 향상되며, 내부에 보이드등의 생성이 방지되는 등 막질이 향상되어, 절연막의 재현성이 향상되어 공정수율및 소자 동작의 신뢰성을 향상시킬 수 있다.

Description

반도체소자의 금속배선간 절연막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A도 내지 제2D도는 본발명에 따른 반도체소자의 금속배선간 절연막의 제조 공정도.

Claims (9)

  1. 반도체기판상에 절연막을 형성하는 공정과, 상기 절연막상에 금속배선을 형성하는 공정과, 상기 구조의 금속배선을 플라즈마 처리하는 공정과, 상기 구조의 전표면에 과실리콘 산화막을 형성하는 공정과, 상기 산화막 상에 O3-TEOS막을 형성하는 공정을 구비하는 반도체소자의 금속배선간 절연막의 제조방법.
  2. 제1항에 있어서, 상기 절연막이 산화막 또는 BPSG 계열 막인 것을 특징으로하는 반도체소자의 금속배선간절연막의 제조방법.
  3. 제1항에 있어서, 상기 금속배선이 장벽금속층과 W층 및 반사방지막의 적층 구조로 형성되는 것을 특징으로하는 반도체소자의 금속배선간 절연막의 제조방법.
  4. 제1항에 있어서, 상기 금속배선이 장벽금속층과 Al층으로 형성되는 것을 특징으로하는 반도체소자의 금속배선간 절연막의 제조방법.
  5. 제1항에 있어서, 상기 플라즈마 처리 공정이 Ar 플라즈마로서, 양 주파수(dual frequency) 방식으로, 고주파수는 200~400W, 저주파수는 50W 이상의 파워로하여, 25℃ 이상의 온도에서, 10초 이상 실시하는 것을 특징으로하는 반도체소자의 금속배선간 절연막의 제조방법.
  6. 제1항에 있어서, 상기 플라즈마를 N2 가스 플라즈마로 처리하는 것을 특징으로하는 반도체소자의 금속배선간 절연막의 제조방법.
  7. 제1항에 있어서, 상기 과실리콘 산화막을 PECVD 방법으로 SiH4-N2O 혼합 가스를 사용하여 굴절율이 1.47 이상인 산화막으로 형성하는 것을 특징으로하는 반도체소자의 금속배선간 절연막의 제조방법.
  8. 제1항에 있어서, 상기 과실리콘 산화막을 1000Å 이상의 두께로 형성하는 것을 특징으로하는 반도체소자의금속배선간 절연막의 제조방법.
  9. 제1항에 있어서, 상기 O3-TEOS막을 5000Å 이상의 두께로 형성하는 것을 특징으로 하는 반도체소자의 금속배선간 절연막의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950017677A 1995-06-28 1995-06-28 반도체소자의 금속배선간 절연막의 제조방법 KR0159016B1 (ko)

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KR1019950017677A KR0159016B1 (ko) 1995-06-28 1995-06-28 반도체소자의 금속배선간 절연막의 제조방법
TW085106271A TW297924B (ko) 1995-06-28 1996-05-27
US08/660,151 US6060382A (en) 1995-06-28 1996-06-04 Method for forming insulating film between metal wirings of semiconductor device
JP8152660A JP2857369B2 (ja) 1995-06-28 1996-06-13 半導体素子の金属配線間絶縁膜の製造方法
CN96108235A CN1056468C (zh) 1995-06-28 1996-06-28 用于在半导体器件的诸金属布线之间形成绝缘薄膜的方法

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KR102402761B1 (ko) * 2015-10-30 2022-05-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법

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CN1056468C (zh) 2000-09-13
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