KR960701478A - 전력 디바이스용 고융점 금속 접점(refractory metal contact for a power device) - Google Patents
전력 디바이스용 고융점 금속 접점(refractory metal contact for a power device) Download PDFInfo
- Publication number
- KR960701478A KR960701478A KR1019950703378A KR19950703378A KR960701478A KR 960701478 A KR960701478 A KR 960701478A KR 1019950703378 A KR1019950703378 A KR 1019950703378A KR 19950703378 A KR19950703378 A KR 19950703378A KR 960701478 A KR960701478 A KR 960701478A
- Authority
- KR
- South Korea
- Prior art keywords
- drain region
- transistor
- melting point
- channel region
- contact
- Prior art date
Links
- 239000003870 refractory metal Substances 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 230000003068 static effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000027756 respiratory electron transport chain Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3022—CMOS common source output SEPP amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3217—Modifications of amplifiers to reduce non-linear distortion in single ended push-pull amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/301—CMOS common drain output SEPP amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/27—A biasing circuit node being switched in an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/468—Indexing scheme relating to amplifiers the temperature being sensed
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/477—Paralleled transistors are used as sensors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
- H03F2203/30006—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push and the pull stages of the SEPP amplifier are both current mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45188—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more current sources in the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45192—Indexing scheme relating to differential amplifiers the differential amplifier contains current mirrors comprising diodes which act as a load for the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45224—One output of the differential amplifier being taken into consideration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
집적회로에서 금속화용 고융점 금속을 사용하여, 동일한 최소 사이즈의 트랜지스터는, 상기 트랜지스터가 고 전류 용도에 사용되는 경우 채널 및 드레인 접점사이의 증가된 공간을 필요로 하지 않고서도, 동일한 제조공정에서 선형 및 논리회로를 형성하는데 사용될 수 있다. 고융점 금속을 사용하는 경우, 드레인 영역에서의 높은 소산에 관련한 금속/실리콘 상호 확산 및 전자이동과 같은 신뢰성 문제가 없어진다.
Description
전력 디바이스용 고융점 금속 접점(REFRACTORY METAL CONTACT FOR A POWER DEVICE)
[도면의 간단한 설명]
제1도는 본 발명에 따라 고융점 금속을 사용하는 제조공정 및 종래의 알루미늄을 기재로 한 금속을 사용하는 제조 공정 사이의 드레인 접점-채널 공간필요성을 비교한 도면이다,
제2도는 본 발명에 따라 구현된 전력 트랜지스터의 레이아웃(200)을 도시한 도면이다.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (4)
- 채널 영역과 드레인 영역에서의 접접 사이의 최소 거리를 한정하는 주어진 제조공정에서 집적회로를 제조하는 방법에 있어서, 동작시 정적 전류를 도통시키도록 채널 영역 및 드레인 영역을 지니는 트랜지스터를 한정하는 트랜지스터 구조를 반도체 기판상에 한정하는 단계, 상기 최소거리와 실질적으로 동일한 거리만큼 상기 채널 영역으로부터 이격된 접점을 상기 드레인 영역에 한정하는 단계, 및 상기 제조공정을 사용하여 상기 트랜지스터를 제조하고, 금속화로서 고융점 금속을 상기 접점에 제공하는 단계를 포함하는 방법.
- 제1항에 있어서, 텅스텐, 탄탈, 몰리브덴, 팔라듐, 플래티늄으로 이루어진 그룹 및 상기 그룹의 합금으로 부터 선택된 고융점 금속을 사용하는 방법.
- 채널 영역 및 드레인 영역에서의 접접 사이의 최소 거리를 필요로 하는 제조공정하에서 제조되는 집적회로에 있어서, 동작시 정적 전류를 도통시키도록 드레인 영역 및 채널 영역을 지니는 트랜지스터를 한정하는 반도체 기판상의 반도체 구조, 상기 최소거리와 실질적으로 동일한 거리만큼 상기 채널 영역으로부터 이격된 상기 드레인 영역의 접접, 및 고융점 금속을 포함하는 상기 접점의 금속 트레이스를 포함하는 접속회로.
- 제3항에 있어서, 상기 고융점 금속은 텅스텐, 탄탈, 몰리브덴, 팔라듐, 플래티늄으로 이루어진 그룹 및 상기 그룹의 합금으로부터 선택되는 집적회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16985493A | 1993-12-17 | 1993-12-17 | |
| US08/169,854 | 1993-12-17 | ||
| PCT/US1994/014695 WO1995017012A1 (en) | 1993-12-17 | 1994-12-15 | Refractory metal contact for a power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960701478A true KR960701478A (ko) | 1996-02-24 |
Family
ID=22617471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950703378A KR960701478A (ko) | 1993-12-17 | 1994-12-15 | 전력 디바이스용 고융점 금속 접점(refractory metal contact for a power device) |
Country Status (3)
| Country | Link |
|---|---|
| EP (2) | EP0686307A1 (ko) |
| KR (1) | KR960701478A (ko) |
| WO (2) | WO1995017041A1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2759822B1 (fr) * | 1997-02-14 | 1999-03-19 | Sgs Thomson Microelectronics | Dispositif amplificateur de puissance |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182873A (ja) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6042866A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPS6072272A (ja) * | 1983-09-28 | 1985-04-24 | Toshiba Corp | 半導体装置の製造方法 |
| BE1000708A7 (nl) * | 1987-06-30 | 1989-03-14 | Bell Telephone Mfg | Correctieschakeling voor versterker. |
| JPH01135064A (ja) * | 1987-11-20 | 1989-05-26 | Hitachi Ltd | 半導体装置 |
| EP0325299A3 (en) * | 1988-01-21 | 1990-08-01 | Nec Corporation | An operational amplifier |
| EP0574097B1 (en) * | 1989-03-14 | 1998-12-16 | Kabushiki Kaisha Toshiba | Semiconductor device having multilayer wiring and the method of making it |
| US4988954A (en) * | 1989-04-28 | 1991-01-29 | Crystal Semiconductor Corporation | Low power output stage circuitry in an amplifier |
| JPH03274732A (ja) * | 1990-03-26 | 1991-12-05 | Hitachi Ltd | 半導体集積回路装置 |
-
1994
- 1994-12-15 EP EP95905439A patent/EP0686307A1/en not_active Withdrawn
- 1994-12-15 WO PCT/US1994/014696 patent/WO1995017041A1/en active IP Right Grant
- 1994-12-15 EP EP95906040A patent/EP0685125B1/en not_active Expired - Lifetime
- 1994-12-15 WO PCT/US1994/014695 patent/WO1995017012A1/en not_active Application Discontinuation
- 1994-12-15 KR KR1019950703378A patent/KR960701478A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0686307A1 (en) | 1995-12-13 |
| WO1995017012A1 (en) | 1995-06-22 |
| WO1995017041A1 (en) | 1995-06-22 |
| EP0685125B1 (en) | 2002-03-20 |
| EP0685125A1 (en) | 1995-12-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |