KR960042075A - 코로나 방전 건 - Google Patents
코로나 방전 건 Download PDFInfo
- Publication number
- KR960042075A KR960042075A KR1019960013344A KR19960013344A KR960042075A KR 960042075 A KR960042075 A KR 960042075A KR 1019960013344 A KR1019960013344 A KR 1019960013344A KR 19960013344 A KR19960013344 A KR 19960013344A KR 960042075 A KR960042075 A KR 960042075A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- oxide layer
- corona discharge
- biased
- properties
- Prior art date
Links
- 230000000873 masking effect Effects 0.000 claims 8
- 150000002500 ions Chemical class 0.000 claims 5
- 238000007599 discharging Methods 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000001186 cumulative effect Effects 0.000 abstract 1
- 238000001739 density measurement Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
실리콘 기판 상의 매우 얇은 산화층들의 두께를 측정하는 방법. 코로나 방전소스는 산화층의 표면상에 조정된 일정 전하밀도를 반복하여 피착한다. 각각의 전하 피착에 대해 산화물 표면 전위의 결과적인 변화를 측정한다. 가정된 산화층 두께에 대한 시작 값을 선택함으로써, 코로나 방전 단계당 실리콘 밴드벤딩에서의 근사 변화가 판정된다.산화층 표면 전위에 대한 밴드벤팅에서의 누적 변화들로 바이어스에 대한 실험 밴드벤딩 특성이 얻어진다. 바이어스에 대한 이론 밴드벤딩 특성이 설정된다. 실험 및 이론 특성들은 이들의 소정 점들에서 일치되고, 이어서 가정된 산화층 두께는 두 특성이 실리콘 축적 영역에서 겹치게 될 때까지 반복된다. 두 특성이 겹칠 수 있게 하는 반복된 산화층 두께가 찾고자 하는 산화층 두께가 된다.최종 얻어진 실험 특성은 산화층의 계면 상태 밀도를 판정하는 데에도 사용된다. 특별히 설계된 코로나 방전 건들에 대해서 산화층 두께 및 계면 상태 밀도 측정 기술에서 사용하기 위해 기술하였다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 산화층 두께가 측정되는 시료 내에 존재하는 전계 패턴에 대한 이상적인 단면도.
Claims (5)
- 코로나 방전 건(corona discharge gun)에 있어서, 팁(tip)에서 소정 극성의 이온들의 소스를 제공하는 바이어스된 니들(needle) 형상 전극; 바이어스된 포커싱 링(focusing ring) 전극; 및 중앙에 어퍼튜어(aperture)된 디스크를 갖는 바이어스된 마스킹 전극을 포함하며; 상기 전극들은 서로로부터 절연되고, 상기 링 전극, 상기 어퍼튜어된 디스크 및 상기 니들 형상 전극이 서로에 관하여 동축 관계에 있도록 지지되며, 상기 링 전극은 상기 니들 형성 전극 및 상기마스킹 전극에 관하여 중간에 배치되는 것을 특징으로 하는 코로나 방전 건.
- 제1항에 있어서, 상기 링 전극 및 상기 마스킹 전극은 상기 이온들의 극성과 동일한 극성을 갖는 전압으로바이어스된 것을 특징으로 하는 코로나 방전 건.
- 코로나 방전 건에 있어서, 비수직 방위의 적어도 하나의 바이어스된 니들 형상 전극으로서, 상기 적어도하나의 니들 형상 전극 각각의 팁에서 소정 극성의 이온들의 소스를 제공하며; 바이어된 포커싱 링 전극; 및 중앙에 어퍼튜어된 디스크를 갖는 바이어스된 마스킹 전극을 포함하며; 상기 전극들은 서로로부터 절연되고, 상기 링 전극 및 상기어퍼튜어된 디스크가 동축 관게에 있도록 지지되며, 상기 링 전극은 각각의 상기 팁 및 상기 마스킹 전극에 관하여 중간에 배치되는 것을 특징으로 하는 코로나 방전 건.
- 제3항에 있어서, 상기 링 전극 및 상기 마스킹 전극은 상기 이온들의 극성과 동일한 극성을 갖는 전압으로바이어스되는 것을 특징으로 하는 코로나 방전 건.
- 코로나 방전 건에 있어서, 제1 축에 대해서 동축 관게에 있는 두 개의 바이어스된 니들 형상 전극들로서,상기 니들 형상 전극들의 팁들은 서로에 대해서 면하고 있으며, 소정 극성의 이온들의 소스를 제공하며; 바이어스된 포커싱 링 전극; 및 중앙에 어퍼튜어된 디스크를 갖는 바이어스된 마스킹 전극을 포함하며; 상기 전극들은 서로로부터 절연되고, 상기 링 전극 및 상기 어퍼튜어된 디스크가 제2 축에 관하여 동축 관계에 있도록 지지되며, 상기 제1 축 및 상기 제2축은 서로에 대해 수직하고, 상기 서로 면하여 있는 팀들간 중앙에서 서로 교차하며, 상기 링 전극은 상기 서로 면하고있는팁들 및 상기 마스킹 전극에 관하여 중간에 배치되는 것을 특징으로 하는 코로나 방전 건.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/440,502 US5644223A (en) | 1995-05-12 | 1995-05-12 | Uniform density charge deposit source |
US8/440,502 | 1995-05-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960042075A true KR960042075A (ko) | 1996-12-19 |
KR0157373B1 KR0157373B1 (ko) | 1999-02-18 |
Family
ID=23749009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960013344A KR0157373B1 (ko) | 1995-05-12 | 1996-04-27 | 코로나 방전 건 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5644223A (ko) |
JP (1) | JP3245051B2 (ko) |
KR (1) | KR0157373B1 (ko) |
TW (1) | TW288180B (ko) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661408A (en) | 1995-03-01 | 1997-08-26 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US5949235A (en) * | 1995-06-22 | 1999-09-07 | Fire Sentry Corporation | System and method for detection and control of ungrounded parts in a production coating line |
US6538462B1 (en) * | 1999-11-30 | 2003-03-25 | Semiconductor Diagnostics, Inc. | Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge |
WO2001086698A2 (en) | 2000-05-10 | 2001-11-15 | Kla-Tencor, Inc. | Method and system for detecting metal contamination on a semiconductor wafer |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
US6782337B2 (en) | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
US6673637B2 (en) | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US6806951B2 (en) | 2000-09-20 | 2004-10-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen |
US6734696B2 (en) * | 2001-11-01 | 2004-05-11 | Kla-Tencor Technologies Corp. | Non-contact hysteresis measurements of insulating films |
US7012438B1 (en) | 2002-07-10 | 2006-03-14 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of an insulating film |
JP3853708B2 (ja) * | 2002-07-10 | 2006-12-06 | Necアクセステクニカ株式会社 | デジタル画像符号化装置および符号化方法ならびにプログラム |
US7064565B1 (en) | 2002-10-31 | 2006-06-20 | Kla-Tencor Technologies Corp. | Methods and systems for determining an electrical property of an insulating film |
US7248062B1 (en) | 2002-11-04 | 2007-07-24 | Kla-Tencor Technologies Corp. | Contactless charge measurement of product wafers and control of corona generation and deposition |
US7075318B1 (en) | 2003-01-16 | 2006-07-11 | Kla-Tencor Technologies Corp. | Methods for imperfect insulating film electrical thickness/capacitance measurement |
US6911350B2 (en) * | 2003-03-28 | 2005-06-28 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US6909291B1 (en) * | 2003-06-24 | 2005-06-21 | Kla-Tencor Technologies Corp. | Systems and methods for using non-contact voltage sensors and corona discharge guns |
US6815974B1 (en) | 2003-07-14 | 2004-11-09 | Semiconductor Diagnostics, Inc. | Determining composition of mixed dielectrics |
US7160742B2 (en) | 2003-07-21 | 2007-01-09 | Qc Solutions, Inc. | Methods for integrated implant monitoring |
US7103484B1 (en) | 2003-10-31 | 2006-09-05 | Kla-Tencor Technologies Corp. | Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films |
US7808257B2 (en) * | 2003-11-12 | 2010-10-05 | International Business Machines Corporation | Ionization test for electrical verification |
KR101056142B1 (ko) | 2004-01-29 | 2011-08-10 | 케이엘에이-텐코 코포레이션 | 레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법 |
US7119569B2 (en) * | 2004-03-05 | 2006-10-10 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
KR100657789B1 (ko) * | 2004-07-15 | 2006-12-14 | 삼성전자주식회사 | 유전막의 누설 전류 특성을 검사하는 방법 및 이를수행하기 위한 장치 |
US7459913B2 (en) * | 2004-08-13 | 2008-12-02 | International Business Machines Corporation | Methods for the determination of film continuity and growth modes in thin dielectric films |
JP4904034B2 (ja) | 2004-09-14 | 2012-03-28 | ケーエルエー−テンカー コーポレイション | レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体 |
US7202691B2 (en) * | 2005-05-31 | 2007-04-10 | Semiconductor Diagnostics, Inc. | Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers |
US7769225B2 (en) | 2005-08-02 | 2010-08-03 | Kla-Tencor Technologies Corp. | Methods and systems for detecting defects in a reticle design pattern |
US7893703B2 (en) * | 2005-08-19 | 2011-02-22 | Kla-Tencor Technologies Corp. | Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer |
US7088123B1 (en) * | 2005-08-31 | 2006-08-08 | Texas Instruments Incorporated | System and method for extraction of C-V characteristics of ultra-thin oxides |
US7570796B2 (en) * | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US7676077B2 (en) | 2005-11-18 | 2010-03-09 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US8041103B2 (en) | 2005-11-18 | 2011-10-18 | Kla-Tencor Technologies Corp. | Methods and systems for determining a position of inspection data in design data space |
WO2008077100A2 (en) | 2006-12-19 | 2008-06-26 | Kla-Tencor Corporation | Systems and methods for creating inspection recipes |
WO2008086282A2 (en) | 2007-01-05 | 2008-07-17 | Kla-Tencor Corporation | Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions |
US8004290B1 (en) | 2007-04-04 | 2011-08-23 | Kla-Tencor Corporation | Method and apparatus for determining dielectric layer properties |
US7962863B2 (en) | 2007-05-07 | 2011-06-14 | Kla-Tencor Corp. | Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer |
US7738093B2 (en) | 2007-05-07 | 2010-06-15 | Kla-Tencor Corp. | Methods for detecting and classifying defects on a reticle |
US8213704B2 (en) | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
US7796804B2 (en) | 2007-07-20 | 2010-09-14 | Kla-Tencor Corp. | Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer |
US7711514B2 (en) | 2007-08-10 | 2010-05-04 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan |
TWI469235B (zh) | 2007-08-20 | 2015-01-11 | Kla Tencor Corp | 決定實際缺陷是潛在系統性缺陷或潛在隨機缺陷之由電腦實施之方法 |
US8139844B2 (en) | 2008-04-14 | 2012-03-20 | Kla-Tencor Corp. | Methods and systems for determining a defect criticality index for defects on wafers |
KR101729669B1 (ko) * | 2008-07-28 | 2017-04-24 | 케이엘에이-텐코어 코오포레이션 | 웨이퍼 상의 메모리 디바이스 영역에서 검출된 결함들을 분류하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들 |
US8775101B2 (en) | 2009-02-13 | 2014-07-08 | Kla-Tencor Corp. | Detecting defects on a wafer |
US8204297B1 (en) | 2009-02-27 | 2012-06-19 | Kla-Tencor Corp. | Methods and systems for classifying defects detected on a reticle |
US8112241B2 (en) | 2009-03-13 | 2012-02-07 | Kla-Tencor Corp. | Methods and systems for generating an inspection process for a wafer |
US8781781B2 (en) | 2010-07-30 | 2014-07-15 | Kla-Tencor Corp. | Dynamic care areas |
US9170211B2 (en) | 2011-03-25 | 2015-10-27 | Kla-Tencor Corp. | Design-based inspection using repeating structures |
US9087367B2 (en) | 2011-09-13 | 2015-07-21 | Kla-Tencor Corp. | Determining design coordinates for wafer defects |
US8831334B2 (en) | 2012-01-20 | 2014-09-09 | Kla-Tencor Corp. | Segmentation for wafer inspection |
US8826200B2 (en) | 2012-05-25 | 2014-09-02 | Kla-Tencor Corp. | Alteration for wafer inspection |
US9189844B2 (en) | 2012-10-15 | 2015-11-17 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific information |
US9053527B2 (en) | 2013-01-02 | 2015-06-09 | Kla-Tencor Corp. | Detecting defects on a wafer |
US9134254B2 (en) | 2013-01-07 | 2015-09-15 | Kla-Tencor Corp. | Determining a position of inspection system output in design data space |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
KR102019534B1 (ko) | 2013-02-01 | 2019-09-09 | 케이엘에이 코포레이션 | 결함 특유의, 다중 채널 정보를 이용한 웨이퍼 상의 결함 검출 |
US9865512B2 (en) | 2013-04-08 | 2018-01-09 | Kla-Tencor Corp. | Dynamic design attributes for wafer inspection |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
US10969370B2 (en) | 2015-06-05 | 2021-04-06 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Measuring semiconductor doping using constant surface potential corona charging |
US10806062B2 (en) | 2018-06-12 | 2020-10-20 | Cnh Industrial America Llc | Self cleaning gauge wheel assembly |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5291494A (en) * | 1976-01-28 | 1977-08-01 | Hitachi Ltd | Mass spectrometer |
SU1122982A1 (ru) * | 1979-12-21 | 1984-11-07 | Кишиневский Ордена Трудового Красного Знамени Государственный Университет Им.В.И.Ленина | Способ определени потенциала диэлектрического сло |
US4326165A (en) * | 1980-01-10 | 1982-04-20 | Westinghouse Electric Corp. | Corona charging for testing reliability of insulator-covered semiconductor devices |
DE3440197A1 (de) * | 1984-11-03 | 1986-05-07 | Hoechst Ag, 6230 Frankfurt | Verfahren fuer die kontinuierliche, kontaktlose schichtdickenbestimmung sowie anordnung zur durchfuehrung des verfahrens |
US4663526A (en) * | 1984-12-26 | 1987-05-05 | Emil Kamieniecki | Nondestructive readout of a latent electrostatic image formed on an insulating material |
US4812756A (en) * | 1987-08-26 | 1989-03-14 | International Business Machines Corporation | Contactless technique for semicondutor wafer testing |
US5267555A (en) * | 1988-07-01 | 1993-12-07 | Philip Pajalich | Apparatus and method for ionizing medication containing mists |
JP2607698B2 (ja) * | 1989-09-29 | 1997-05-07 | 株式会社日立製作所 | 大気圧イオン化質量分析計 |
DE4013211A1 (de) * | 1990-04-25 | 1991-10-31 | Fraunhofer Ges Forschung | Ellipsometer |
JP2619147B2 (ja) * | 1991-04-15 | 1997-06-11 | 三菱電機株式会社 | Mis構造の界面準位密度分布測定方法 |
US5216362A (en) * | 1991-10-08 | 1993-06-01 | International Business Machines Corporation | Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers |
-
1995
- 1995-05-12 US US08/440,502 patent/US5644223A/en not_active Expired - Lifetime
- 1995-10-04 TW TW084110397A patent/TW288180B/zh not_active IP Right Cessation
-
1996
- 1996-04-27 KR KR1019960013344A patent/KR0157373B1/ko not_active IP Right Cessation
- 1996-04-30 JP JP10927596A patent/JP3245051B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08316278A (ja) | 1996-11-29 |
US5644223A (en) | 1997-07-01 |
TW288180B (en) | 1996-10-11 |
KR0157373B1 (ko) | 1999-02-18 |
JP3245051B2 (ja) | 2002-01-07 |
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