KR960042075A - 코로나 방전 건 - Google Patents

코로나 방전 건 Download PDF

Info

Publication number
KR960042075A
KR960042075A KR1019960013344A KR19960013344A KR960042075A KR 960042075 A KR960042075 A KR 960042075A KR 1019960013344 A KR1019960013344 A KR 1019960013344A KR 19960013344 A KR19960013344 A KR 19960013344A KR 960042075 A KR960042075 A KR 960042075A
Authority
KR
South Korea
Prior art keywords
electrode
oxide layer
corona discharge
biased
properties
Prior art date
Application number
KR1019960013344A
Other languages
English (en)
Other versions
KR0157373B1 (ko
Inventor
레오나드 버퀼 로저
Original Assignee
제프리 엘. 포맨
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제프리 엘. 포맨, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 제프리 엘. 포맨
Publication of KR960042075A publication Critical patent/KR960042075A/ko
Application granted granted Critical
Publication of KR0157373B1 publication Critical patent/KR0157373B1/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12—Measuring electrostatic fields or voltage-potential
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

실리콘 기판 상의 매우 얇은 산화층들의 두께를 측정하는 방법. 코로나 방전소스는 산화층의 표면상에 조정된 일정 전하밀도를 반복하여 피착한다. 각각의 전하 피착에 대해 산화물 표면 전위의 결과적인 변화를 측정한다. 가정된 산화층 두께에 대한 시작 값을 선택함으로써, 코로나 방전 단계당 실리콘 밴드벤딩에서의 근사 변화가 판정된다.산화층 표면 전위에 대한 밴드벤팅에서의 누적 변화들로 바이어스에 대한 실험 밴드벤딩 특성이 얻어진다. 바이어스에 대한 이론 밴드벤딩 특성이 설정된다. 실험 및 이론 특성들은 이들의 소정 점들에서 일치되고, 이어서 가정된 산화층 두께는 두 특성이 실리콘 축적 영역에서 겹치게 될 때까지 반복된다. 두 특성이 겹칠 수 있게 하는 반복된 산화층 두께가 찾고자 하는 산화층 두께가 된다.최종 얻어진 실험 특성은 산화층의 계면 상태 밀도를 판정하는 데에도 사용된다. 특별히 설계된 코로나 방전 건들에 대해서 산화층 두께 및 계면 상태 밀도 측정 기술에서 사용하기 위해 기술하였다.

Description

코로나 방전 건
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 산화층 두께가 측정되는 시료 내에 존재하는 전계 패턴에 대한 이상적인 단면도.

Claims (5)

  1. 코로나 방전 건(corona discharge gun)에 있어서, 팁(tip)에서 소정 극성의 이온들의 소스를 제공하는 바이어스된 니들(needle) 형상 전극; 바이어스된 포커싱 링(focusing ring) 전극; 및 중앙에 어퍼튜어(aperture)된 디스크를 갖는 바이어스된 마스킹 전극을 포함하며; 상기 전극들은 서로로부터 절연되고, 상기 링 전극, 상기 어퍼튜어된 디스크 및 상기 니들 형상 전극이 서로에 관하여 동축 관계에 있도록 지지되며, 상기 링 전극은 상기 니들 형성 전극 및 상기마스킹 전극에 관하여 중간에 배치되는 것을 특징으로 하는 코로나 방전 건.
  2. 제1항에 있어서, 상기 링 전극 및 상기 마스킹 전극은 상기 이온들의 극성과 동일한 극성을 갖는 전압으로바이어스된 것을 특징으로 하는 코로나 방전 건.
  3. 코로나 방전 건에 있어서, 비수직 방위의 적어도 하나의 바이어스된 니들 형상 전극으로서, 상기 적어도하나의 니들 형상 전극 각각의 팁에서 소정 극성의 이온들의 소스를 제공하며; 바이어된 포커싱 링 전극; 및 중앙에 어퍼튜어된 디스크를 갖는 바이어스된 마스킹 전극을 포함하며; 상기 전극들은 서로로부터 절연되고, 상기 링 전극 및 상기어퍼튜어된 디스크가 동축 관게에 있도록 지지되며, 상기 링 전극은 각각의 상기 팁 및 상기 마스킹 전극에 관하여 중간에 배치되는 것을 특징으로 하는 코로나 방전 건.
  4. 제3항에 있어서, 상기 링 전극 및 상기 마스킹 전극은 상기 이온들의 극성과 동일한 극성을 갖는 전압으로바이어스되는 것을 특징으로 하는 코로나 방전 건.
  5. 코로나 방전 건에 있어서, 제1 축에 대해서 동축 관게에 있는 두 개의 바이어스된 니들 형상 전극들로서,상기 니들 형상 전극들의 팁들은 서로에 대해서 면하고 있으며, 소정 극성의 이온들의 소스를 제공하며; 바이어스된 포커싱 링 전극; 및 중앙에 어퍼튜어된 디스크를 갖는 바이어스된 마스킹 전극을 포함하며; 상기 전극들은 서로로부터 절연되고, 상기 링 전극 및 상기 어퍼튜어된 디스크가 제2 축에 관하여 동축 관계에 있도록 지지되며, 상기 제1 축 및 상기 제2축은 서로에 대해 수직하고, 상기 서로 면하여 있는 팀들간 중앙에서 서로 교차하며, 상기 링 전극은 상기 서로 면하고있는팁들 및 상기 마스킹 전극에 관하여 중간에 배치되는 것을 특징으로 하는 코로나 방전 건.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960013344A 1995-05-12 1996-04-27 코로나 방전 건 KR0157373B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/440,502 US5644223A (en) 1995-05-12 1995-05-12 Uniform density charge deposit source
US8/440,502 1995-05-12

Publications (2)

Publication Number Publication Date
KR960042075A true KR960042075A (ko) 1996-12-19
KR0157373B1 KR0157373B1 (ko) 1999-02-18

Family

ID=23749009

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960013344A KR0157373B1 (ko) 1995-05-12 1996-04-27 코로나 방전 건

Country Status (4)

Country Link
US (1) US5644223A (ko)
JP (1) JP3245051B2 (ko)
KR (1) KR0157373B1 (ko)
TW (1) TW288180B (ko)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661408A (en) 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US5949235A (en) * 1995-06-22 1999-09-07 Fire Sentry Corporation System and method for detection and control of ungrounded parts in a production coating line
US6538462B1 (en) 1999-11-30 2003-03-25 Semiconductor Diagnostics, Inc. Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
WO2001086698A2 (en) 2000-05-10 2001-11-15 Kla-Tencor, Inc. Method and system for detecting metal contamination on a semiconductor wafer
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
WO2002025708A2 (en) 2000-09-20 2002-03-28 Kla-Tencor-Inc. Methods and systems for semiconductor fabrication processes
US6734696B2 (en) * 2001-11-01 2004-05-11 Kla-Tencor Technologies Corp. Non-contact hysteresis measurements of insulating films
JP3853708B2 (ja) * 2002-07-10 2006-12-06 Ｎｅｃアクセステクニカ株式会社 デジタル画像符号化装置および符号化方法ならびにプログラム
US7012438B1 (en) 2002-07-10 2006-03-14 Kla-Tencor Technologies Corp. Methods and systems for determining a property of an insulating film
US7064565B1 (en) 2002-10-31 2006-06-20 Kla-Tencor Technologies Corp. Methods and systems for determining an electrical property of an insulating film
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
US7075318B1 (en) 2003-01-16 2006-07-11 Kla-Tencor Technologies Corp. Methods for imperfect insulating film electrical thickness/capacitance measurement
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US6909291B1 (en) 2003-06-24 2005-06-21 Kla-Tencor Technologies Corp. Systems and methods for using non-contact voltage sensors and corona discharge guns
US6815974B1 (en) 2003-07-14 2004-11-09 Semiconductor Diagnostics, Inc. Determining composition of mixed dielectrics
US7160742B2 (en) 2003-07-21 2007-01-09 Qc Solutions, Inc. Methods for integrated implant monitoring
US7103484B1 (en) 2003-10-31 2006-09-05 Kla-Tencor Technologies Corp. Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films
WO2005057228A1 (en) * 2003-11-12 2005-06-23 International Business Machines Corporation Ionization test for electrical verification
JP4758358B2 (ja) 2004-01-29 2011-08-24 ケーエルエー−テンカー コーポレイション レチクル設計データにおける欠陥を検出するためのコンピュータに実装される方法
US7119569B2 (en) * 2004-03-05 2006-10-10 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
KR100657789B1 (ko) * 2004-07-15 2006-12-14 삼성전자주식회사 유전막의 누설 전류 특성을 검사하는 방법 및 이를수행하기 위한 장치
US7459913B2 (en) * 2004-08-13 2008-12-02 International Business Machines Corporation Methods for the determination of film continuity and growth modes in thin dielectric films
JP4904034B2 (ja) 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
US7202691B2 (en) * 2005-05-31 2007-04-10 Semiconductor Diagnostics, Inc. Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers
US7769225B2 (en) 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
US20070109003A1 (en) * 2005-08-19 2007-05-17 Kla-Tencor Technologies Corp. Test Pads, Methods and Systems for Measuring Properties of a Wafer
US7088123B1 (en) * 2005-08-31 2006-08-08 Texas Instruments Incorporated System and method for extraction of C-V characteristics of ultra-thin oxides
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP5427609B2 (ja) 2006-12-19 2014-02-26 ケーエルエー−テンカー・コーポレーション 検査レシピ作成システムおよびその方法
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8004290B1 (en) 2007-04-04 2011-08-23 Kla-Tencor Corporation Method and apparatus for determining dielectric layer properties
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) * 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
KR101448971B1 (ko) 2007-08-20 2014-10-13 케이엘에이-텐코어 코오포레이션 실제 결함들이 잠재적으로 조직적인 결함들인지 또는 잠재적으로 랜덤인 결함들인지를 결정하기 위한 컴퓨터-구현 방법들
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
WO2010014609A2 (en) * 2008-07-28 2010-02-04 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
WO2014149197A1 (en) 2013-02-01 2014-09-25 Kla-Tencor Corporation Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US10969370B2 (en) 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
US10806062B2 (en) 2018-06-12 2020-10-20 Cnh Industrial America Llc Self cleaning gauge wheel assembly

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291494A (en) * 1976-01-28 1977-08-01 Hitachi Ltd Mass spectrometer
SU1122982A1 (ru) * 1979-12-21 1984-11-07 Кишиневский Ордена Трудового Красного Знамени Государственный Университет Им.В.И.Ленина Способ определени потенциала диэлектрического сло
US4326165A (en) * 1980-01-10 1982-04-20 Westinghouse Electric Corp. Corona charging for testing reliability of insulator-covered semiconductor devices
DE3440197A1 (de) * 1984-11-03 1986-05-07 Hoechst Ag, 6230 Frankfurt Verfahren fuer die kontinuierliche, kontaktlose schichtdickenbestimmung sowie anordnung zur durchfuehrung des verfahrens
US4663526A (en) * 1984-12-26 1987-05-05 Emil Kamieniecki Nondestructive readout of a latent electrostatic image formed on an insulating material
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US5267555A (en) * 1988-07-01 1993-12-07 Philip Pajalich Apparatus and method for ionizing medication containing mists
JP2607698B2 (ja) * 1989-09-29 1997-05-07 株式会社日立製作所 大気圧イオン化質量分析計
DE4013211A1 (de) * 1990-04-25 1991-10-31 Fraunhofer Ges Forschung Ellipsometer
JP2619147B2 (ja) * 1991-04-15 1997-06-11 三菱電機株式会社 Ｍｉｓ構造の界面準位密度分布測定方法
US5216362A (en) * 1991-10-08 1993-06-01 International Business Machines Corporation Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers

Also Published As

Publication number Publication date
US5644223A (en) 1997-07-01
KR0157373B1 (ko) 1999-02-18
JP3245051B2 (ja) 2002-01-07
JPH08316278A (ja) 1996-11-29
TW288180B (en) 1996-10-11

Similar Documents

Publication Publication Date Title
KR960042075A (ko) 코로나 방전 건
US5485091A (en) Contactless electrical thin oxide measurements
Smith et al. Droplet evaporation and discharge dynamics in electrospray ionization
CN106663588A (zh) 质量分析器
JPH0652750B2 (ja) 半導体ウエハの非接触試験方法
Soloviev et al. Breakdown voltage for surface dielectric barrier discharge ignition in atmospheric air
JPS62141578A (ja) 除・帯電方法
CN110416144B (zh) 静电卡盘、工艺腔室和半导体处理设备
Maller et al. Growth of ionization currents in nitrogen
KR20020072238A (ko) 가스 봉입 스위칭 전기 방전관
US4127898A (en) Storage element for an erasable, digital permanent storage
Mair On the onset voltage of liquid metal ion sources
Ingram et al. Quartz gauge technique for impact experiments
Giacometti Constant-current corona triode adapted and optimized for the characterization of thin dielectric films
JPH09321107A (ja) 半導体の層厚測定装置
Pozharov et al. Structure of group cathode spots on the surfaces of hot-rolled steels
JPH09311122A (ja) 空間電荷測定用標準試料および空間電荷測定方法
SU1380803A1 (ru) Способ изготовлени ультразвукового фокусирующего пьезопреобразовател
JPH08329872A (ja) 静電レンズおよびその製造方法
JP3504804B2 (ja) 半導体ウェハの電気特性測定方法および装置
Longwitz et al. Study of micro glow discharges as ion sources
JPH0291473A (ja) ディストリビュータ用電極
Laker et al. The development and application of a fast-response DC-coupled flame ionization current sensor
JP2016195474A (ja) エレクトレット発電部品
JP2004158342A (ja) コロナ放電装置

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050616

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee