KR960031394A - 정의 온도저항계수를 갖는 반도체 세라믹 조성물 및 그 제조방법 - Google Patents

정의 온도저항계수를 갖는 반도체 세라믹 조성물 및 그 제조방법 Download PDF

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KR960031394A
KR960031394A KR1019960003148A KR19960003148A KR960031394A KR 960031394 A KR960031394 A KR 960031394A KR 1019960003148 A KR1019960003148 A KR 1019960003148A KR 19960003148 A KR19960003148 A KR 19960003148A KR 960031394 A KR960031394 A KR 960031394A
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semiconductor ceramic
ceramic composition
barium titanate
sodium
amount
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KR1019960003148A
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고우지 하야시
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사또우 히로시
티디 케이 가부시기가이샤
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Publication of KR960031394A publication Critical patent/KR960031394A/ko

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Abstract

본 발명은 정의 온도저항계수를 갖는 반도체 세라믹 조성물 및 그 제조방법에 관한 것으로서, 이 반도체 세라믹 조성물은 산화 실리콘 및 망간을 함유하는 티탄산 바륨 반도체 세라믹 조성물을 포함하는 동시에 이 티탄산 바륨 반도체 조성물의 양에 대해 0.0005 내지 0.02중량%의 나트륨을 함유한다.

Description

정의 온도저항계수를 갖는 반도체 세라믹 조성물 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 정의 온도저항계수를 가지며, 산화 실리콘 및 망간을 함유하는 티탄산 바륨 반도체 세라믹 조성물을 포함하고, 상기 티탄산 바륨의 양에 대해 0.0005 내지 0.02중량%의 나트륨을 포함하는 반도체 세라믹 조성물.
  2. 제1항에 있어서, 상기 티탄산 바륨 반도체 세라믹 조성물의 양에 대해 0.001 내지 0.02중량%의 나트륨을 포함하는 반도체 세라믹 조성물.
  3. 제2항에 있어서, 상기 티탄산 바륨 반도체 세라믹 조성물의 양에 대해 0.001 내지 0.008중량%의 나트륨을 포함하는 반도체 세라믹 조성물.
  4. 정의 온도저항계수를 갖는 반도체 세라믹을 제조하기 위한 방법에 있어서, 산화 실리콘 및 망간을 함유하는 티탄산 바륨 반도체 세라믹 조성물의 출발물질을 하소하는 단계와, 상기 티탄산 바륨 반도체 세라믹 조성물의 양에 대해 0.005 내지 0.02중량%의 나트륨이 함유되도록 상기 하소된 조성물에 나트륨 화합물을 첨가하는 단계와, 상기 조성물을 소결하는 단계를 구비하는 반도체 세라믹 조성물의 제조방법.
  5. 제4항에 있어서, 상기 티탄산 바륨 반도체 세라믹 조성물의 양에 대해 0.001 내지 0.02중량%의 나트륨이 함유되도록 상기 하소된 조성물에 나트륨 화합물을 첨가하는 것을 특징으로 하는 반도체 세라믹 조성물의 제조방법.
  6. 제5항에 있어서, 상기 티탄산 바륨 반도체 세라믹 조성물의 양에 대해 0.001 내지 0.008중량%의 나트륨이 함유되도록 상기 하소된 조성물에 나트륨 화합물에 첨가하는 것을 특징으로 하는 반도체 세라믹 조성물의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960003148A 1995-02-14 1996-02-09 정의 온도저항계수를 갖는 반도체 세라믹 조성물 및 그 제조방법 KR960031394A (ko)

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JP95-25694 1995-02-14
JP7025694A JPH08217536A (ja) 1995-02-14 1995-02-14 正の抵抗温度係数を有する半導体磁器組成物及びその製造方法

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US (1) US5686367A (ko)
EP (1) EP0727791A3 (ko)
JP (1) JPH08217536A (ko)
KR (1) KR960031394A (ko)
CN (1) CN1143255A (ko)
MY (1) MY111923A (ko)

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