WO2004037877A3 - Organosiloxanes - Google Patents
Organosiloxanes Download PDFInfo
- Publication number
- WO2004037877A3 WO2004037877A3 PCT/US2003/017658 US0317658W WO2004037877A3 WO 2004037877 A3 WO2004037877 A3 WO 2004037877A3 US 0317658 W US0317658 W US 0317658W WO 2004037877 A3 WO2004037877 A3 WO 2004037877A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- percent
- formula
- present
- microelectronic
- organosiloxane
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Silicon Polymers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004546678A JP2006503165A (en) | 2002-06-03 | 2003-06-03 | Organosiloxane |
EP03796272A EP1532193A4 (en) | 2002-06-03 | 2003-06-03 | Organosiloxanes |
AU2003298518A AU2003298518A1 (en) | 2002-06-03 | 2003-06-03 | Organosiloxanes |
KR20047019702A KR20050016505A (en) | 2002-06-03 | 2003-06-03 | Organosiloxanes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/161,561 | 2002-06-03 | ||
US10/161,561 US6962727B2 (en) | 1998-03-20 | 2002-06-03 | Organosiloxanes |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004037877A2 WO2004037877A2 (en) | 2004-05-06 |
WO2004037877A9 WO2004037877A9 (en) | 2004-11-11 |
WO2004037877A3 true WO2004037877A3 (en) | 2005-01-13 |
Family
ID=32174163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/017658 WO2004037877A2 (en) | 2002-06-03 | 2003-06-03 | Organosiloxanes |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1532193A4 (en) |
JP (1) | JP2006503165A (en) |
KR (1) | KR20050016505A (en) |
CN (1) | CN1671772A (en) |
AU (1) | AU2003298518A1 (en) |
TW (1) | TW200307709A (en) |
WO (1) | WO2004037877A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6596125B2 (en) | 2001-09-21 | 2003-07-22 | Philip Morris Incorporated | Method and apparatus for applying a material to a web |
KR20070095736A (en) * | 2006-03-22 | 2007-10-01 | 제일모직주식회사 | Hardmask composition coated under photoresist comprising organosilane polymer and process of producing integrated circuit devices using thereof |
WO2007144452A1 (en) * | 2006-06-13 | 2007-12-21 | Braggone Oy | Hybrid inorganic-organic polymer compositions for anti-reflective coatings |
KR100930672B1 (en) * | 2008-01-11 | 2009-12-09 | 제일모직주식회사 | Silicon-based hard mask composition and method for manufacturing semiconductor integrated circuit device using same |
US9023433B2 (en) * | 2008-01-15 | 2015-05-05 | Dow Corning Corporation | Silsesquioxane resins and method of using them to form an antireflective coating |
KR101030019B1 (en) | 2009-12-31 | 2011-04-20 | 제일모직주식회사 | Transparent resin for encapsulation material and electronic device including the same |
TWI460864B (en) * | 2011-11-11 | 2014-11-11 | Au Optronics Corp | Thin film transistor and fabricating method thereof |
CN109536068B (en) * | 2018-11-16 | 2021-08-17 | 宁波激智科技股份有限公司 | High-viscosity protective film and preparation method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5859162A (en) * | 1995-03-10 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Silicone ladder polymer and process for producing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0076656B1 (en) * | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
US6252030B1 (en) * | 1999-03-17 | 2001-06-26 | Dow Corning Asia, Ltd. | Hydrogenated octasilsesquioxane-vinyl group-containing copolymer and method for manufacture |
-
2003
- 2003-02-25 TW TW092103913A patent/TW200307709A/en unknown
- 2003-06-03 CN CNA03818530XA patent/CN1671772A/en active Pending
- 2003-06-03 JP JP2004546678A patent/JP2006503165A/en not_active Withdrawn
- 2003-06-03 AU AU2003298518A patent/AU2003298518A1/en not_active Abandoned
- 2003-06-03 KR KR20047019702A patent/KR20050016505A/en not_active Application Discontinuation
- 2003-06-03 EP EP03796272A patent/EP1532193A4/en not_active Withdrawn
- 2003-06-03 WO PCT/US2003/017658 patent/WO2004037877A2/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5859162A (en) * | 1995-03-10 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Silicone ladder polymer and process for producing the same |
Non-Patent Citations (1)
Title |
---|
See also references of EP1532193A4 * |
Also Published As
Publication number | Publication date |
---|---|
TW200307709A (en) | 2003-12-16 |
WO2004037877A2 (en) | 2004-05-06 |
AU2003298518A8 (en) | 2004-05-13 |
KR20050016505A (en) | 2005-02-21 |
EP1532193A2 (en) | 2005-05-25 |
WO2004037877A9 (en) | 2004-11-11 |
AU2003298518A1 (en) | 2004-05-13 |
CN1671772A (en) | 2005-09-21 |
EP1532193A4 (en) | 2005-10-26 |
JP2006503165A (en) | 2006-01-26 |
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