EP1532193A4 - Organosiloxanes - Google Patents

Organosiloxanes

Info

Publication number
EP1532193A4
EP1532193A4 EP03796272A EP03796272A EP1532193A4 EP 1532193 A4 EP1532193 A4 EP 1532193A4 EP 03796272 A EP03796272 A EP 03796272A EP 03796272 A EP03796272 A EP 03796272A EP 1532193 A4 EP1532193 A4 EP 1532193A4
Authority
EP
European Patent Office
Prior art keywords
organosiloxanes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03796272A
Other languages
German (de)
French (fr)
Other versions
EP1532193A2 (en
Inventor
William Bedwell
Nigel Hacker
Roger Leung
Nancy Iwamoto
Jan Nedbal
Songyuan Xie
Lorenza Moro
Shyama Mukherjee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/161,561 external-priority patent/US6962727B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP1532193A2 publication Critical patent/EP1532193A2/en
Publication of EP1532193A4 publication Critical patent/EP1532193A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
EP03796272A 2002-06-03 2003-06-03 Organosiloxanes Withdrawn EP1532193A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US161561 2002-06-03
US10/161,561 US6962727B2 (en) 1998-03-20 2002-06-03 Organosiloxanes
PCT/US2003/017658 WO2004037877A2 (en) 2002-06-03 2003-06-03 Organosiloxanes

Publications (2)

Publication Number Publication Date
EP1532193A2 EP1532193A2 (en) 2005-05-25
EP1532193A4 true EP1532193A4 (en) 2005-10-26

Family

ID=32174163

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03796272A Withdrawn EP1532193A4 (en) 2002-06-03 2003-06-03 Organosiloxanes

Country Status (7)

Country Link
EP (1) EP1532193A4 (en)
JP (1) JP2006503165A (en)
KR (1) KR20050016505A (en)
CN (1) CN1671772A (en)
AU (1) AU2003298518A1 (en)
TW (1) TW200307709A (en)
WO (1) WO2004037877A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596125B2 (en) 2001-09-21 2003-07-22 Philip Morris Incorporated Method and apparatus for applying a material to a web
KR20070095736A (en) * 2006-03-22 2007-10-01 제일모직주식회사 Hardmask composition coated under photoresist comprising organosilane polymer and process of producing integrated circuit devices using thereof
WO2007144452A1 (en) * 2006-06-13 2007-12-21 Braggone Oy Hybrid inorganic-organic polymer compositions for anti-reflective coatings
KR100930672B1 (en) 2008-01-11 2009-12-09 제일모직주식회사 Silicon-based hard mask composition and method for manufacturing semiconductor integrated circuit device using same
EP2238198A4 (en) * 2008-01-15 2011-11-16 Dow Corning Silsesquioxane resins
KR101030019B1 (en) 2009-12-31 2011-04-20 제일모직주식회사 Transparent resin for encapsulation material and electronic device including the same
TWI460864B (en) * 2011-11-11 2014-11-11 Au Optronics Corp Thin film transistor and fabricating method thereof
CN109536068B (en) * 2018-11-16 2021-08-17 宁波激智科技股份有限公司 High-viscosity protective film and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626556A (en) * 1981-10-03 1986-12-02 Japan Synthetic Rubber Co., Ltd. Solvent-soluble organopolysilsesquioxane, process for producing the same, and semi-conductor using the same
US5859162A (en) * 1995-03-10 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Silicone ladder polymer and process for producing the same
EP1036808A2 (en) * 1999-03-15 2000-09-20 DOW CORNING ASIA, Ltd. Hydrogenated octasilsesquioxane- vinyl group- containing copolymer and method for manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626556A (en) * 1981-10-03 1986-12-02 Japan Synthetic Rubber Co., Ltd. Solvent-soluble organopolysilsesquioxane, process for producing the same, and semi-conductor using the same
US5859162A (en) * 1995-03-10 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Silicone ladder polymer and process for producing the same
EP1036808A2 (en) * 1999-03-15 2000-09-20 DOW CORNING ASIA, Ltd. Hydrogenated octasilsesquioxane- vinyl group- containing copolymer and method for manufacture

Also Published As

Publication number Publication date
WO2004037877A9 (en) 2004-11-11
CN1671772A (en) 2005-09-21
AU2003298518A8 (en) 2004-05-13
JP2006503165A (en) 2006-01-26
EP1532193A2 (en) 2005-05-25
WO2004037877A3 (en) 2005-01-13
WO2004037877A2 (en) 2004-05-06
KR20050016505A (en) 2005-02-21
AU2003298518A1 (en) 2004-05-13
TW200307709A (en) 2003-12-16

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A4 Supplementary search report drawn up and despatched

Effective date: 20050909

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Ipc: 7C 23C 16/00 B

Ipc: 7B 05D 3/06 B

Ipc: 7B 05D 3/02 B

Ipc: 7C 08G 77/20 B

Ipc: 7C 08G 77/12 A

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