KR960019799A - 박막 전계효과 트랜지스터 - Google Patents

박막 전계효과 트랜지스터 Download PDF

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Publication number
KR960019799A
KR960019799A KR1019940032100A KR19940032100A KR960019799A KR 960019799 A KR960019799 A KR 960019799A KR 1019940032100 A KR1019940032100 A KR 1019940032100A KR 19940032100 A KR19940032100 A KR 19940032100A KR 960019799 A KR960019799 A KR 960019799A
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KR
South Korea
Prior art keywords
field effect
thin film
effect transistor
ultra
film field
Prior art date
Application number
KR1019940032100A
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English (en)
Other versions
KR0155302B1 (ko
Inventor
이성재
박경완
신민철
Original Assignee
양승택
재단법인 한국전자통신연구소
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 양승택, 재단법인 한국전자통신연구소 filed Critical 양승택
Priority to KR1019940032100A priority Critical patent/KR0155302B1/ko
Publication of KR960019799A publication Critical patent/KR960019799A/ko
Application granted granted Critical
Publication of KR0155302B1 publication Critical patent/KR0155302B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 전계효과 트랜지스터의 전자 통로의 재료로서 Mo-C 초박막을 사용한 금속 전계효과 트랜지스터에 관한 것이다. Mo-C는 전기적으로 연속적인 초박막의 형태로 쉽게 만들어진다. 또한, Mo-C는 높은 용융점 및 강도 등의 재질 뿐 아니라, 초박막구조의 안정성 때문에 손쉽게 상온에서 초박막으로 만들 수 있는 성질들을 가지고 있기 때문에 초박막 금속 전계효과 트랜지스터의 금속 재료로서 아주 적합하다.

Description

박막 전계효과 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전연막과 금속박막 회로층 그리고 별도의 보호층을 한 단위로 하는 구조와, 이들의 적층 구조에 대한 단면도,
제2도는 본 발명에 따른 몰리브덴-카바이드 전계효과 트랜지스터의 단면도.

Claims (1)

  1. 박막 전계효과 트랜지스터에 있어서, 소오스와 드레인 사이의 채널이 몰리브덴 카바이드(Mo-C) 박막으로 구성되는 것을 특징으로 하는 박막 전계효과 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940032100A 1994-11-30 1994-11-30 박막 전계효과 트랜지스터 KR0155302B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940032100A KR0155302B1 (ko) 1994-11-30 1994-11-30 박막 전계효과 트랜지스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940032100A KR0155302B1 (ko) 1994-11-30 1994-11-30 박막 전계효과 트랜지스터

Publications (2)

Publication Number Publication Date
KR960019799A true KR960019799A (ko) 1996-06-17
KR0155302B1 KR0155302B1 (ko) 1998-10-15

Family

ID=19399744

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940032100A KR0155302B1 (ko) 1994-11-30 1994-11-30 박막 전계효과 트랜지스터

Country Status (1)

Country Link
KR (1) KR0155302B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101419005B1 (ko) * 2013-11-25 2014-07-14 (주)비디비치코스메틱 화장품 용기

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101419005B1 (ko) * 2013-11-25 2014-07-14 (주)비디비치코스메틱 화장품 용기

Also Published As

Publication number Publication date
KR0155302B1 (ko) 1998-10-15

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