KR960015086A - 중합체 - Google Patents

중합체 Download PDF

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Publication number
KR960015086A
KR960015086A KR1019950038037A KR19950038037A KR960015086A KR 960015086 A KR960015086 A KR 960015086A KR 1019950038037 A KR1019950038037 A KR 1019950038037A KR 19950038037 A KR19950038037 A KR 19950038037A KR 960015086 A KR960015086 A KR 960015086A
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formula
polymer
och
alkyl
general formula
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KR1019950038037A
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메르테스도르프 칼-로렌쯔
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스티븐 티. 워쇼
오씨지 마이크로엘렉트로닉 머티리얼즈 인코포레이티드
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Publication of KR960015086A publication Critical patent/KR960015086A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/12—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
    • C08F216/14—Monomers containing only one unsaturated aliphatic radical
    • C08F216/1408—Monomers containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F220/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/58—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-(meth)acryloylmorpholine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/60—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing nitrogen in addition to the carbonamido nitrogen
    • C08F220/603—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing nitrogen in addition to the carbonamido nitrogen and containing oxygen in addition to the carbonamido oxygen and nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C08F230/085—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Emergency Medicine (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

청구범위 제1항에 따른 신규한 조성물은 인쇄 기판 및 회로 기판의 제조, 특히 집적 회로의 제조를 위한 레지스트 제재로 사용될 수 있다. 화합물의 자동촉매 분해는 일어나지 않고 여기서 수득된 레지시트 필름은 우수한 접착성을 가진다.

Description

중합체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 중합체에 존재하는 구조 단위체의 총량을 기준으로 하기 일반식(Ia)의 구조 반복 단위 90 내지 10몰%, 하기 일반식(Ib)의 구조 반복 단위 90 내지 10몰% 및 하기 일반식(Ic)의 구조 반복 단위 0 내지 40몰%를 퍼센트의 합이 항상 100%가 되도록 포함하는 겔 투과 크로마토 크로마토그래피에 의해 결정된 분자량 103내지 106의 신규한 중합체 :
    상기 식에서, R1은 H, C1-C4알킬, 할로-C1-C4알킬, 할로겐 또는 CN이고, R2는 독립적으로 H, C1-C4알킬, C1-C4알콕시 또는 할로겐이며, R3은 H 또는 CH3이고, R4는 산-제거성 O-C- 또는 O-Si결합을 포함하는 기이며, R5는 H 또는 CH3이고, R6은 H, COOH 또는 CN이며, R7은 H 또는 CH3이고, R8은 H, CN, COOH, COOR10또는 아릴이며, R10은 C1-C6알킬이고, n은 1,2 또는 3이며, m은 0,1,2 또는 3이다.
  2. 제1항에 있어서, 중합체에 존재하는 구조 단위체의 총량을 기준으로 일반식(Ia)의 구조 반복 단위 90 내지 20몰%, 일반식(Ib)의 구조 반복 단위 80 내지 10몰% 및 일반식(Ic)의 구조 반복 단위 0 내지 30몰%를 퍼센트의 합이 항상 100%가 되도록 포함하는 중합체.
  3. 제1항에 있어서, 하기를 만족하는 중합체 R1은 CH3이고, R2는 H, CH3, OCH3, Cl 또는 Br이며, R3은 H이고, R4는 일반식
    -OC(CH3)2-OCH3또는 -OCH(CH3)-OC2H5의 산-제거성 O-C 또는 O-Si를 포함하는 기, 아르알콕시, 알릴옥시, C3-C6알콕시 또는 일반식 -O-Si(R11)3(R11은 C1-C4알킬)의 기 또는 R4는 일반식또는이며, R9는 산-제거성 보호기, 예컨대 아르알킬, 알릴 또는 측쇄 C3-C6알킬이고, R6은 H이며, R7은 H이고, R7은 CH3이며, R8은 COOH이고, R′은 H 또는 CH3이며, p은 0 또는 1이고, n은 1이며, m은 0이다.
  4. 제3항에 있어서, R4는 일반식
    -OC(CH3)2OCH3또는 -OCH(CH3)OC2H5의 기인 중합체.
  5. 제1항에 있어서, 하기를 만족하는 중합체 : R1은 CH3이고, R3은 H이며, R5는 H이고 R6은 H이며, R7은 CH3이고, R8은 COOH이며, n은 1이고 m은 0이며, R4는 일반식또는 -OCH(CH3)OC2H5이다.
  6. 하기 일반식(II)의 단량체 10-90%, 일반식(III)의 단량체 10-90%, 및 일반식(IV)의 단량체 5-40%의 라디칼성 또는 이온성 중합화에 의해 제조되는 제1항에 다른 중합체의 제조방법 :
    상기식에서, R1, R2, R3, R4, R5, R6, R7, R8, m 및 n은 상술한 바와 같다.
  7. 레지스트 제재에서 제1항에 따른 중합체의 용도.
  8. 수성알칼리를 용매로한 하기 일반식(III)의 화합물 용액을 유기 용매에의 일반식(V)의 화합물 동몰량 용액으로 처리하는 것을 포함하는 일반식(III)의 화합물의 순수한 이성질체의 제조방법 :
    상기 식에서, R1, R2, m 및 n은 일반식(Ia), (Ib) 및 (Ic)와 관련해서 제1항에서 정의된 바와 같고, Hal은 불소, 브롬 또는 바람직하게는 염소이다.
  9. 중량%는 레지스트 제재내의 하기 성분 a), b) 및 c)의 총 중량을 기준으로한 하기 성분을 포함하는 레지스트 제재; a)본 발명에 따른 중합체 45 내지 99.9중량%, b) 광활성 화합물(산 발생자) 0.1 내지 20중량%, c) 광학적 개질제 0.01 내지 40중량% 및 d) 유기 용매.
  10. 제9항에 있어서, 인쇄 기판 및 회로 기판의 제조, 특히 집적 회로의 제조를 위한 레지스트 제재의 용도.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950038037A 1994-10-26 1995-10-26 중합체 KR960015086A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CH320294 1994-10-26
CH94/3202 1994-10-26
CH322094 1994-10-27
CH94/3220 1994-10-27

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KR960015086A true KR960015086A (ko) 1996-05-22

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EP (1) EP0709410A3 (ko)
JP (1) JPH08225617A (ko)
KR (1) KR960015086A (ko)

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US5780566A (en) 1998-07-14
EP0709410A2 (en) 1996-05-01
US5863701A (en) 1999-01-26
EP0709410A3 (en) 1997-03-26
JPH08225617A (ja) 1996-09-03

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