KR960012477A - 게이트전극의 형성방법 - Google Patents

게이트전극의 형성방법

Info

Publication number
KR960012477A
KR960012477A KR1019950031829A KR19950031829A KR960012477A KR 960012477 A KR960012477 A KR 960012477A KR 1019950031829 A KR1019950031829 A KR 1019950031829A KR 19950031829 A KR19950031829 A KR 19950031829A KR 960012477 A KR960012477 A KR 960012477A
Authority
KR
South Korea
Prior art keywords
gate electrode
gate
electrode
Prior art date
Application number
KR1019950031829A
Other languages
English (en)
Other versions
KR100377458B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012477A publication Critical patent/KR960012477A/ko
Application granted granted Critical
Publication of KR100377458B1 publication Critical patent/KR100377458B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
KR1019950031829A 1994-09-28 1995-09-26 게이트전극의형성방법 KR100377458B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1994-233098 1994-09-28
JP23309894 1994-09-28
JP7025220A JPH08153804A (ja) 1994-09-28 1995-02-14 ゲート電極の形成方法
JP1995-25220 1995-02-14

Publications (2)

Publication Number Publication Date
KR960012477A true KR960012477A (ko) 1996-04-20
KR100377458B1 KR100377458B1 (ko) 2003-07-18

Family

ID=26362811

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031829A KR100377458B1 (ko) 1994-09-28 1995-09-26 게이트전극의형성방법

Country Status (3)

Country Link
US (1) US5654242A (ko)
JP (1) JPH08153804A (ko)
KR (1) KR100377458B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200116178A (ko) * 2019-03-08 2020-10-12 삼성전자주식회사 반도체 소자 및 그의 제조 방법

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US5824576A (en) 1996-02-23 1998-10-20 Micron Technology, Inc. Method of forming complementary type conductive regions on a substrate
DE19652688A1 (de) * 1996-12-18 1998-06-25 Kurt Tillmanns Verfahren und Vorrichtung zum Reinstfiltern und Desinfizieren von Luft
FR2758907B1 (fr) * 1997-01-27 1999-05-07 Commissariat Energie Atomique Procede d'obtention d'un film mince, notamment semiconducteur, comportant une zone protegee des ions, et impliquant une etape d'implantation ionique
JP2980057B2 (ja) * 1997-04-30 1999-11-22 日本電気株式会社 半導体装置の製造方法
US5946599A (en) * 1997-07-24 1999-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor IC device
US6261887B1 (en) * 1997-08-28 2001-07-17 Texas Instruments Incorporated Transistors with independently formed gate structures and method
US6284633B1 (en) * 1997-11-24 2001-09-04 Motorola Inc. Method for forming a tensile plasma enhanced nitride capping layer over a gate electrode
US6130123A (en) * 1998-06-30 2000-10-10 Intel Corporation Method for making a complementary metal gate electrode technology
KR100308133B1 (ko) * 1999-01-12 2001-09-26 김영환 듀얼 게이트 모스 트랜지스터 제조방법
ATE344535T1 (de) * 1999-07-06 2006-11-15 Elmos Semiconductor Ag Cmos kompatibler soi-prozess
JP3974507B2 (ja) 2001-12-27 2007-09-12 株式会社東芝 半導体装置の製造方法
US6660577B2 (en) * 2002-02-23 2003-12-09 Taiwan Semiconductor Manufacturing Co. Ltd Method for fabricating metal gates in deep sub-micron devices
JP2004152995A (ja) 2002-10-30 2004-05-27 Toshiba Corp 半導体装置の製造方法
JP4197607B2 (ja) 2002-11-06 2008-12-17 株式会社東芝 絶縁ゲート型電界効果トランジスタを含む半導体装置の製造方法
US6890807B2 (en) * 2003-05-06 2005-05-10 Intel Corporation Method for making a semiconductor device having a metal gate electrode
US7030430B2 (en) * 2003-08-15 2006-04-18 Intel Corporation Transition metal alloys for use as a gate electrode and devices incorporating these alloys
JP2005136198A (ja) * 2003-10-30 2005-05-26 Toshiba Corp 半導体装置の製造方法
US20060172480A1 (en) * 2005-02-03 2006-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Single metal gate CMOS device design
US8188551B2 (en) 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
CN1929095A (zh) * 2005-09-06 2007-03-14 旺宏电子股份有限公司 开口的形成方法
KR100827435B1 (ko) * 2006-01-31 2008-05-06 삼성전자주식회사 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법
JP2006203237A (ja) * 2006-03-09 2006-08-03 Toshiba Corp 絶縁ゲート型電界効果トランジスタを含む半導体装置
US9202822B2 (en) * 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8859356B2 (en) 2011-07-12 2014-10-14 Globalfoundries Inc. Method of forming metal silicide regions on a semiconductor device
KR102262887B1 (ko) 2014-07-21 2021-06-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102378471B1 (ko) 2017-09-18 2022-03-25 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법

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JPS5694668A (en) * 1979-12-27 1981-07-31 Toshiba Corp Manufacture of semiconductor device
US4597163A (en) * 1984-12-21 1986-07-01 Zilog, Inc. Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures
JPS6484666A (en) * 1987-09-28 1989-03-29 Matsushita Electronics Corp Manufacture of high melting metal silicide gate mosfet
JPH02237073A (ja) * 1989-03-09 1990-09-19 Fujitsu Ltd 半導体装置の製造方法
US4966869A (en) * 1990-05-04 1990-10-30 Spectrum Cvd, Inc. Tungsten disilicide CVD
US5355010A (en) * 1991-06-21 1994-10-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
JPH05129300A (ja) * 1991-06-28 1993-05-25 Hitachi Ltd 金属又は金属シリサイドの薄膜形成方法及び半導体装置の製造方法
US5231056A (en) * 1992-01-15 1993-07-27 Micron Technology, Inc. Tungsten silicide (WSix) deposition process for semiconductor manufacture
JPH0620992A (ja) * 1992-06-01 1994-01-28 Fujitsu Ltd 気相成長方法および装置
JPH0637108A (ja) * 1992-07-14 1994-02-10 Fujitsu Ltd 半導体装置の製造方法
JP2599560B2 (ja) * 1992-09-30 1997-04-09 インターナショナル・ビジネス・マシーンズ・コーポレイション ケイ化タングステン膜形成方法
US5500249A (en) * 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5395787A (en) * 1993-12-01 1995-03-07 At&T Corp. Method of manufacturing shallow junction field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200116178A (ko) * 2019-03-08 2020-10-12 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US11948994B2 (en) 2019-03-08 2024-04-02 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
US5654242A (en) 1997-08-05
JPH08153804A (ja) 1996-06-11
KR100377458B1 (ko) 2003-07-18

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E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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