KR960012392A - 본딩와이어 높이 검사방법 - Google Patents

본딩와이어 높이 검사방법 Download PDF

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Publication number
KR960012392A
KR960012392A KR1019950021888A KR19950021888A KR960012392A KR 960012392 A KR960012392 A KR 960012392A KR 1019950021888 A KR1019950021888 A KR 1019950021888A KR 19950021888 A KR19950021888 A KR 19950021888A KR 960012392 A KR960012392 A KR 960012392A
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South Korea
Prior art keywords
wire
height
wire height
inspection method
optical system
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KR1019950021888A
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English (en)
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KR100191557B1 (ko
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히로미 도미야마
다케유키 나카가와
사토루 나가이
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후지야마 겐지
가부시키가이샤 신가와
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Publication of KR100191557B1 publication Critical patent/KR100191557B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Wire Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

[목적]
본딩된 와이어의 높이 평가가 가능한 본딩와이어 높이 검사방법을 제공한다.
[구성]
미리광학계의 합초레벨을 바꾸어 와이어 높이와 와이어폭의 상관관계를 조사해 두고, 검사하는 와이어의 높이 기준이 되는 상한치(Z1) 및 하한치(Z2)에서 광학계의 합초레벨인 검사레벨(Z0)을 설정하고, 검사하는 와이어(5b, 5c, 5d)를 촬상한 와이어폭(H0, H2, H3)이 상기 와이어 높이와 와이어폭의 상관관계에 있어서의 상한치(Z1) 및 하한치(Z2)내에 있어서의 와이어 폭내인지를 구하여 와이어 높이의 양부를 판정한다.

Description

본딩와이어 높이 검사방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 본딩와이어 높이 검사방법에 사용하는 제어회로부의 1실시예를 나타내는 블록도.
제5도는 본딩와이어 높이 검사장치의 개략측면도.

Claims (1)

  1. 반도체 칩의 패드와 리드프레임의 리드에 본딩된 와이어를 광학계를 통하여 촬상장치에서 촬상하여 와이어 높이를 검사하는 본딩와이어 높이 검사방법에 있어서, 미리광학계의 합초레벨을 바꾸어 와이어 높이와 와이어폭과의 상관관계를 조사해 두고, 검사하는 와이어 높이의 기준이 되는 상한치 및 하한치에서 광학계의 합초레벨인 검사레벨을 설정하고, 검사하는 와이어를 촬상한 와이어 폭이 상기 와이어 높이와 와이어 폭의 상관관계에 있어서의 상기 상한치 및 하한치내에 있어서의 와이어폭 내인지를 구하여 와이어 높이의 양부를 판정하는 것을 특징으로 하는 본딩와이어 높이 검사방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950021888A 1994-09-09 1995-07-24 본딩와이어 높이 검사방법 KR100191557B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-240789 1994-09-09
JP6240789A JPH0883829A (ja) 1994-09-09 1994-09-09 ボンディングワイヤ高さ検査方法

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KR960012392A true KR960012392A (ko) 1996-04-20
KR100191557B1 KR100191557B1 (ko) 1999-06-15

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US (1) US5583641A (ko)
JP (1) JPH0883829A (ko)
KR (1) KR100191557B1 (ko)
TW (1) TW450427U (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291780B1 (ko) * 1998-06-15 2002-05-01 윤종용 본딩와이어 검사장치 및 그 검사방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3370547B2 (ja) * 1997-03-17 2003-01-27 株式会社新川 ボンディングワイヤ高さ検査装置
JP2008252080A (ja) * 2007-03-08 2008-10-16 Shinkawa Ltd ボンディング部の圧着ボール検出方法及び圧着ボール検出装置
JP5680005B2 (ja) 2012-02-24 2015-03-04 株式会社東芝 コネクタの嵌合状態を検査する検査方法および検査装置、並びにコネクタを有する電気機器の組立方法
SG2013084975A (en) * 2013-11-11 2015-06-29 Saedge Vision Solutions Pte Ltd An apparatus and method for inspecting asemiconductor package
JP6433810B2 (ja) * 2015-02-23 2018-12-05 キヤノンマシナリー株式会社 ボンディングワイヤの検出方法及びボンディングワイヤの検出装置
TWI697656B (zh) * 2017-12-20 2020-07-01 日商新川股份有限公司 線形狀檢查裝置以及線形狀檢查方法
KR20220049482A (ko) * 2020-10-14 2022-04-21 이미지 이큅먼트 피티이. 엘티디. 오버랩된 본드 와이어의 루프 길이 측정

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2688361B2 (ja) * 1988-08-02 1997-12-10 正己 山川 光電センサ
US5030008A (en) * 1988-10-11 1991-07-09 Kla Instruments, Corporation Method and apparatus for the automated analysis of three-dimensional objects
JP2981942B2 (ja) * 1991-12-02 1999-11-22 株式会社新川 ボンデイングワイヤ検査方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291780B1 (ko) * 1998-06-15 2002-05-01 윤종용 본딩와이어 검사장치 및 그 검사방법

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US5583641A (en) 1996-12-10
TW450427U (en) 2001-08-11
JPH0883829A (ja) 1996-03-26
KR100191557B1 (ko) 1999-06-15

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