KR960011015B1 - 유기디실란 소오스를 사용하여 저압 화학적 증착에 의해 100°c 정도의 저온에서 이산화규소막을 증착하는 방법 - Google Patents

유기디실란 소오스를 사용하여 저압 화학적 증착에 의해 100°c 정도의 저온에서 이산화규소막을 증착하는 방법 Download PDF

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Publication number
KR960011015B1
KR960011015B1 KR1019920016909A KR920016909A KR960011015B1 KR 960011015 B1 KR960011015 B1 KR 960011015B1 KR 1019920016909 A KR1019920016909 A KR 1019920016909A KR 920016909 A KR920016909 A KR 920016909A KR 960011015 B1 KR960011015 B1 KR 960011015B1
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South Korea
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temperature
substrate
deposition
vacuum
film
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Expired - Fee Related
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KR1019920016909A
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English (en)
Korean (ko)
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KR930006860A (ko
Inventor
알렌 로버츠 데이비드
케니스 호치베르그 아더
Original Assignee
에어 프로덕츠 앤드 케미칼스 인코오포레이티드
윌리암 에프. 마시
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Publication of KR930006860A publication Critical patent/KR930006860A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019920016909A 1991-09-18 1992-09-17 유기디실란 소오스를 사용하여 저압 화학적 증착에 의해 100°c 정도의 저온에서 이산화규소막을 증착하는 방법 Expired - Fee Related KR960011015B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/762101 1991-09-18
US07/762,101 US5204141A (en) 1991-09-18 1991-09-18 Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
US7/762101 1991-09-18

Publications (2)

Publication Number Publication Date
KR930006860A KR930006860A (ko) 1993-04-22
KR960011015B1 true KR960011015B1 (ko) 1996-08-16

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ID=25064138

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Application Number Title Priority Date Filing Date
KR1019920016909A Expired - Fee Related KR960011015B1 (ko) 1991-09-18 1992-09-17 유기디실란 소오스를 사용하여 저압 화학적 증착에 의해 100°c 정도의 저온에서 이산화규소막을 증착하는 방법

Country Status (4)

Country Link
US (1) US5204141A (enExample)
EP (1) EP0533129A2 (enExample)
JP (1) JP2634743B2 (enExample)
KR (1) KR960011015B1 (enExample)

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Also Published As

Publication number Publication date
EP0533129A3 (enExample) 1994-03-02
EP0533129A2 (en) 1993-03-24
US5204141A (en) 1993-04-20
KR930006860A (ko) 1993-04-22
JPH05195228A (ja) 1993-08-03
JP2634743B2 (ja) 1997-07-30

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