KR960009224A - P-mos 트랜지스터의 핫 캐리어 열화의 시뮬레이션 방법 - Google Patents
P-mos 트랜지스터의 핫 캐리어 열화의 시뮬레이션 방법 Download PDFInfo
- Publication number
- KR960009224A KR960009224A KR1019950025317A KR19950025317A KR960009224A KR 960009224 A KR960009224 A KR 960009224A KR 1019950025317 A KR1019950025317 A KR 1019950025317A KR 19950025317 A KR19950025317 A KR 19950025317A KR 960009224 A KR960009224 A KR 960009224A
- Authority
- KR
- South Korea
- Prior art keywords
- mos transistors
- simulation method
- hot carrier
- carrier degradation
- degradation
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 238000006731 degradation reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004088 simulation Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94-195071 | 1994-08-19 | ||
| JP19507194A JP3380054B2 (ja) | 1994-08-19 | 1994-08-19 | Ｐ−ｍｏｓトランジスタのホットキャリア劣化のシミュレーション方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960009224A true KR960009224A (ko) | 1996-03-22 |
| KR0162540B1 KR0162540B1 (ko) | 1998-12-01 |
Family
ID=16335078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950025317A KR0162540B1 (ko) | 1994-08-19 | 1995-08-17 | P-mos 트랜지스터의 핫 캐리어 열화의 시뮬레이션 방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5615377A (ko) |
| JP (1) | JP3380054B2 (ko) |
| KR (1) | KR0162540B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100796511B1 (ko) * | 2006-07-31 | 2008-01-21 | 동부일렉트로닉스 주식회사 | Ｍｏｓｆｅｔ에서 드레인 포화 전압을 구하는 방법 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6073082A (en) * | 1996-04-11 | 2000-06-06 | Mitsubishi Denki Kabushiki Kaisha | Method of estimating lifetime of floating SOI-MOSFET |
| US6049213A (en) * | 1998-01-27 | 2000-04-11 | International Business Machines Corporation | Method and system for testing the reliability of gate dielectric films |
| US6278964B1 (en) * | 1998-05-29 | 2001-08-21 | Matsushita Electric Industrial Co., Ltd. | Hot carrier effect simulation for integrated circuits |
| JP3125870B2 (ja) * | 1998-07-06 | 2001-01-22 | 日本電気株式会社 | 遅延計算方法及び遅延値計算プログラムを記録した記録媒体 |
| US6198301B1 (en) * | 1998-07-23 | 2001-03-06 | Lucent Technologies Inc. | Method for determining the hot carrier lifetime of a transistor |
| JP3382544B2 (ja) * | 1998-09-14 | 2003-03-04 | 沖電気工業株式会社 | Ｍｏｓｆｅｔのシミュレーション方法及び装置 |
| US6188234B1 (en) | 1999-01-07 | 2001-02-13 | International Business Machines Corporation | Method of determining dielectric time-to-breakdown |
| US6530064B1 (en) * | 1999-12-29 | 2003-03-04 | Texas Instruments Incorporated | Method and apparatus for predicting an operational lifetime of a transistor |
| US6425111B1 (en) * | 1999-12-30 | 2002-07-23 | The Board Of Trustees Of The Leland Stanford Junior University | Saturation region transistor modeling for geometric programming |
| JP3405713B2 (ja) | 2000-06-27 | 2003-05-12 | 松下電器産業株式会社 | 半導体装置の寿命推定方法および信頼性シミュレーション方法 |
| US7292968B2 (en) * | 2000-09-29 | 2007-11-06 | Cadence Design Systems, Inc. | Hot carrier circuit reliability simulation |
| US7567891B1 (en) * | 2000-09-29 | 2009-07-28 | Cadence Design Systems, Inc. | Hot-carrier device degradation modeling and extraction methodologies |
| US6583641B2 (en) * | 2001-04-25 | 2003-06-24 | United Microelectronics Corp. | Method of determining integrity of a gate dielectric |
| US7106088B2 (en) * | 2005-01-10 | 2006-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of predicting high-k semiconductor device lifetime |
| TW200809748A (en) * | 2006-08-09 | 2008-02-16 | Ind Tech Res Inst | Method for simulating circuit reliability and system thereof |
| US8362794B2 (en) * | 2009-07-23 | 2013-01-29 | International Business Machines Corporation | Method and system for assessing reliability of integrated circuit |
| US9141735B2 (en) * | 2010-06-18 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit device reliability simulation system |
| CN103310028B (zh) | 2012-03-07 | 2017-08-15 | 飞思卡尔半导体公司 | 考虑器件老化的设计集成电路的方法 |
| CN102707227B (zh) * | 2012-05-17 | 2014-07-23 | 深港产学研基地 | 一种场效应晶体管阈值电压提取方法 |
| KR102087441B1 (ko) * | 2012-10-17 | 2020-03-11 | 매그나칩 반도체 유한회사 | 웨이퍼 레벨 신뢰도 강화방법 |
| US9213787B1 (en) * | 2014-03-31 | 2015-12-15 | Cadence Design Systems, Inc. | Simulation based system and method for gate oxide reliability enhancement |
| KR102070722B1 (ko) | 2019-06-11 | 2020-01-29 | 영현전력기술 주식회사 | 배전선로의 전신주 애자 설치 구조 |
| US11537768B2 (en) * | 2020-03-16 | 2022-12-27 | Nanya Technology Corporation | Method for aging simulation model establishment |
| CN113049936B (zh) * | 2021-03-12 | 2022-08-19 | 鲁明亮 | 一种提取cmos器件中迁移率和源漏极串联电阻的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816753A (en) * | 1987-05-21 | 1989-03-28 | Advanced Research And Applications Corporation | Method for reliability testing of integrated circuits |
| JPH0448640A (ja) * | 1990-06-14 | 1992-02-18 | Oki Electric Ind Co Ltd | Ｍｏｓトランジスタの製造方法 |
| DE69329543T2 (de) * | 1992-12-09 | 2001-05-31 | Compaq Computer Corp | Herstellung eines Feldeffekttransistors mit integrierter Schottky-Klammerungsdiode |
| JP2736501B2 (ja) * | 1993-09-28 | 1998-04-02 | 三菱電機株式会社 | Ｍｏｓ型トランジスタのホットキャリア劣化のシミュレーション方法 |
-
1994
- 1994-08-19 JP JP19507194A patent/JP3380054B2/ja not_active Expired - Fee Related
-
1995
- 1995-06-05 US US08/463,810 patent/US5615377A/en not_active Expired - Fee Related
- 1995-08-17 KR KR1019950025317A patent/KR0162540B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100796511B1 (ko) * | 2006-07-31 | 2008-01-21 | 동부일렉트로닉스 주식회사 | Ｍｏｓｆｅｔ에서 드레인 포화 전압을 구하는 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0864814A (ja) | 1996-03-08 |
| US5615377A (en) | 1997-03-25 |
| KR0162540B1 (ko) | 1998-12-01 |
| JP3380054B2 (ja) | 2003-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20070823 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |