KR970004056A - 초고속 쌍극성 트랜지스터 및 그 제조 방법 - Google Patents

초고속 쌍극성 트랜지스터 및 그 제조 방법 Download PDF

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Publication number
KR970004056A
KR970004056A KR1019950015888A KR19950015888A KR970004056A KR 970004056 A KR970004056 A KR 970004056A KR 1019950015888 A KR1019950015888 A KR 1019950015888A KR 19950015888 A KR19950015888 A KR 19950015888A KR 970004056 A KR970004056 A KR 970004056A
Authority
KR
South Korea
Prior art keywords
manufacturing
bipolar transistors
ultrafast
ultrafast bipolar
transistors
Prior art date
Application number
KR1019950015888A
Other languages
English (en)
Other versions
KR100208977B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950015888A priority Critical patent/KR100208977B1/ko
Priority to JP8152732A priority patent/JPH098053A/ja
Priority to US08/664,861 priority patent/US5773349A/en
Publication of KR970004056A publication Critical patent/KR970004056A/ko
Application granted granted Critical
Publication of KR100208977B1 publication Critical patent/KR100208977B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
KR1019950015888A 1995-06-15 1995-06-15 초고속 쌍극성 트랜지스터의 제조방법 KR100208977B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950015888A KR100208977B1 (ko) 1995-06-15 1995-06-15 초고속 쌍극성 트랜지스터의 제조방법
JP8152732A JPH098053A (ja) 1995-06-15 1996-06-13 半導体装置及びその製造方法
US08/664,861 US5773349A (en) 1995-06-15 1996-06-17 Method for making ultrahigh speed bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950015888A KR100208977B1 (ko) 1995-06-15 1995-06-15 초고속 쌍극성 트랜지스터의 제조방법

Publications (2)

Publication Number Publication Date
KR970004056A true KR970004056A (ko) 1997-01-29
KR100208977B1 KR100208977B1 (ko) 1999-07-15

Family

ID=19417223

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950015888A KR100208977B1 (ko) 1995-06-15 1995-06-15 초고속 쌍극성 트랜지스터의 제조방법

Country Status (3)

Country Link
US (1) US5773349A (ko)
JP (1) JPH098053A (ko)
KR (1) KR100208977B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756100B1 (fr) 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR2756101B1 (fr) * 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Procede de fabrication d'un transistor npn dans une technologie bicmos
FR2757683B1 (fr) * 1996-12-20 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire et capacite
KR100248504B1 (ko) * 1997-04-01 2000-03-15 윤종용 바이폴라 트랜지스터 및 그의 제조 방법
DE19845789A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
DE19957113A1 (de) 1999-11-26 2001-06-07 Infineon Technologies Ag Verfahren zur Herstellung eines aktiven Transistorgebietes
JP2010251368A (ja) * 2009-04-10 2010-11-04 Renesas Electronics Corp バイポーラトランジスタ及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3127455B2 (ja) * 1990-08-31 2001-01-22 ソニー株式会社 半導体装置の製法
US5391503A (en) * 1991-05-13 1995-02-21 Sony Corporation Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask
US5204277A (en) * 1992-02-03 1993-04-20 Motorola, Inc. Method of forming bipolar transistor having substrate to polysilicon extrinsic base contact
JP3022689B2 (ja) * 1992-08-31 2000-03-21 日本電気株式会社 バイポーラトランジスタの製造方法
US5643806A (en) * 1993-02-28 1997-07-01 Sony Corporation Manufacturing method for making bipolar device
JP2654540B2 (ja) * 1994-06-21 1997-09-17 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US5773349A (en) 1998-06-30
KR100208977B1 (ko) 1999-07-15
JPH098053A (ja) 1997-01-10

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