KR960002066B1 - 옥시 나이트라이드 제조방법 - Google Patents

옥시 나이트라이드 제조방법 Download PDF

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Publication number
KR960002066B1
KR960002066B1 KR1019920019239A KR920019239A KR960002066B1 KR 960002066 B1 KR960002066 B1 KR 960002066B1 KR 1019920019239 A KR1019920019239 A KR 1019920019239A KR 920019239 A KR920019239 A KR 920019239A KR 960002066 B1 KR960002066 B1 KR 960002066B1
Authority
KR
South Korea
Prior art keywords
oxide film
oxynitride
manufacturing
present
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920019239A
Other languages
English (en)
Korean (ko)
Other versions
KR940010209A (ko
Inventor
황현상
Original Assignee
Lg반도체주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg반도체주식회사, 문정환 filed Critical Lg반도체주식회사
Priority to KR1019920019239A priority Critical patent/KR960002066B1/ko
Priority to TW082108570A priority patent/TW228613B/zh
Priority to DE4335457A priority patent/DE4335457A1/de
Priority to JP5284230A priority patent/JPH06209009A/ja
Publication of KR940010209A publication Critical patent/KR940010209A/ko
Application granted granted Critical
Publication of KR960002066B1 publication Critical patent/KR960002066B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019920019239A 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법 Expired - Fee Related KR960002066B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019920019239A KR960002066B1 (ko) 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법
TW082108570A TW228613B (https=) 1992-10-20 1993-10-15
DE4335457A DE4335457A1 (de) 1992-10-20 1993-10-18 Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung
JP5284230A JPH06209009A (ja) 1992-10-20 1993-10-20 半導体素子のゲート絶縁膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920019239A KR960002066B1 (ko) 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법

Publications (2)

Publication Number Publication Date
KR940010209A KR940010209A (ko) 1994-05-24
KR960002066B1 true KR960002066B1 (ko) 1996-02-10

Family

ID=19341412

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920019239A Expired - Fee Related KR960002066B1 (ko) 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법

Country Status (4)

Country Link
JP (1) JPH06209009A (https=)
KR (1) KR960002066B1 (https=)
DE (1) DE4335457A1 (https=)
TW (1) TW228613B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103478B2 (ja) 2007-09-10 2012-12-19 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
JP4902716B2 (ja) 2008-11-20 2012-03-21 株式会社日立国際電気 不揮発性半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
JPH06209009A (ja) 1994-07-26
DE4335457A1 (de) 1994-04-21
KR940010209A (ko) 1994-05-24
TW228613B (https=) 1994-08-21

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