KR950704811A - 성막장치(film forming device) - Google Patents

성막장치(film forming device)

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Publication number
KR950704811A
KR950704811A KR1019950701981A KR19950701981A KR950704811A KR 950704811 A KR950704811 A KR 950704811A KR 1019950701981 A KR1019950701981 A KR 1019950701981A KR 19950701981 A KR19950701981 A KR 19950701981A KR 950704811 A KR950704811 A KR 950704811A
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South Korea
Prior art keywords
gas
reaction vessel
dope
film forming
outlets
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KR1019950701981A
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English (en)
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KR0182089B1 (ko
Inventor
아쓰시 호사카
미쓰아키 이와시타
도시하루 니시무라
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이노우에 아끼라
도쿄에레쿠토론 가부시키가이샤
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Publication of KR950704811A publication Critical patent/KR950704811A/ko
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Publication of KR0182089B1 publication Critical patent/KR0182089B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

반도체 웨이퍼(W) 등의 피처리체 표면에 불순물이 도프된 막을 형성하기 위한 성막장치는, 그 길이방향을 연직으로 해서 배치되고, 복수의 반도체 웨이퍼(W)가 배치되는 영역을 반응관(2,20)을 갖고, 반응관(2,20)내의 그 영역에는 복수의 반도체 웨이퍼(W)가 피처리체가 간격을 두고 연직방향으로 겹쳐진 상태로 배열되고, 이 반응관(2,20)내에 성막가스도입관(6,61)을 통해서 성막가스가 도입되며, 이 장치는 가스유출구(76,77,77a,77b)가 반응관(2,20)내의 상기 피처리체 배치영역보다 하방에 위치하고, 거기에서 상방을 향해 도프가스를 도입하기 위한 주도프가스도입관(71)과; 가스유출구(76,77,77a,77b)가 주도프가스도입관(71)의 유출구보다 상기 반응관(2,20)의 상방에 설치되고, 주도프가스도입관(71)으로부터의 도프가스의 공급을 보충하기 위해 도프가스를 도입하는 적어도 1개의 부도프가스도입관(27,72a,72b)과; 상기 반응관(2,20)내의 가스를 배출하기 위한 배기계와; 반응관(2,20)내를 가열하기 위한 가열수단을 구비하고 있다.

Description

성막장치(FILM FORMING DEVICE)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일 상태에 관한 성막장치를 도시하는 단면도, 제5도는 본 발명의 다른 상태에 관한 성막장치를 도시하는 단면도.

Claims (8)

  1. 피처리체의 표면에 불순물이 도프된 막을 형성하기 위한 성막 장치는, 길이방향을 갖고, 또 그 안에 길이 방향을 따라 복수의 피처리체가 배치되는 피처리체 배치영역을 갖는 반응용기와; 상기 반응용기내에 성막가스를 도입하기 위한 성막가스도입관(6,61)과; 가스유출구(76,77,77a,77b)가 상기 반응용기내의 상기 피처리체 배치영역보다 길이방향의 일단측에 위치하고, 거기에서 상기 반응용기의 타단을 향해 도프가스를 도입하기 위한 주도프가스도입관(71)과; 가스유출구(76,77,77a,77b)가 상기 주도프가스도입관(71)의 유출구보다 상기 반응용기의 타단측에 설치되고, 상기주도프가스도입관(71)으로부터의 도프가스 공급을 보충하기 위해 도프가스를 도입하는 적어도 1개의 부도프가스도입관(72,72a,72b)과; 상기 반응용기내의 가스를 배출하기 위한 배기수단과; 상기 반응용기내를 가열하기 위한 가열수단을 구비하고 있는 것을 특징으로 하는 성막장치.
  2. 제1항에 있어서, 2개의 부도프가스도입관(72,72a,72b)을 갖고, 각 부도프가스도입관(72,72a,72b)의 가스유출구(76,77,77a,77b)가 상기 반응용기의 길이방향에 관해 다른 위치에 위치하고 있는 것을 특징으로 하는 성막장치.
  3. 제1항에 있어서, 상기 반응용기는 그 길이방향을 연직(연直)으로 하여 배치되고, 그 안에 복수의 피처리체가 간격을 두고 연직방향으로 겹쳐진 상태로 배열되는 것을 특징으로 하는 성막장치.
  4. 제3항에 있어서, 상기 주 및 부도프가스도입관은 반응용기내에 수직부를 갖고, 그 수직부에 가스유출구(76,77,77a,77b)가 형성되어 있고, 가스유출구(76,77,77a,77b)에서 반응용기내의 상방을 향해 도프가스가 도입하는 것을 특징으로 하는 성막장치.
  5. 제1항에 있어서, 상기부도프가스도입관(72,72a,72b)의 가스유출구(76,77,77a,77b)는 상기 피처리체 배치영역에 대응한 위치에 위치하고 있는 것을 특징으로 하는 성막장치.
  6. 피처리체의 표면에 불순물이 도프된 막을 형성하기 위한 성막 장치는, 그 길이방향을 연직으로 하여 배치되고, 복수의 피처리체가 배치되는 피처리체 배치영역을 갖고, 그 영역에 복수의 피처리체가 간격을 두고 연직 방향으로 겹쳐진 상태로 배열되는 반응용기와; 상기 반응용기내에 성막가스를 도입하기 위한 성막가스도입관(6,61)과; 가스유출(76,77,77a,77b)가 상기 반응용기내의 상기 피처리체 배치영역보다 하방에 위치하고, 거기에서 상방을 향해 도프가스를 도입하기 위한 주도프가스도입관(71)과; 가스유출구(76,77,77a,77b)가 상기 주도프가스도입관(71)의 유출구보다 상기 반응용기의 상방에 설치되고, 상기 주도프가스도입관(71)으로부터의 도프가스 공급을 보충하기 위해 도프가스를 도입하는 적어도 1개의 부도프가스도입관(72,72a,72b)과; 상기 반응용기내의 가스를 배출하기 위한 배기수단과; 상기 반응용기내를 가열하기 위한 가열수단을 구비하고 있는 것을 특징으로 하는 성막장치.
  7. 제6항에, 2개의 부도프가스도입관(72,72a72b)을 갖고, 각 부도프가스도입관(72,72a,72b)의 가스 유출구(76,77,77a77b) 높이가 다른 것을 특징으로 하는 성막장치.
  8. 제6항에 있어서, 상기 부도프가스도입관(72,72a,72b)의 가스우출구(76,77,77a,77b)는 상기 피처리체 배치영역에 대응한 위치에 위치하고 있는 것을 특징으로 하는 성막장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950701981A 1993-09-16 1994-09-16 성막장치 KR0182089B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5255051A JPH0786174A (ja) 1993-09-16 1993-09-16 成膜装置
JP93-255051 1993-09-16
PCT/JP1994/001526 WO1995008185A1 (fr) 1993-09-16 1994-09-16 Dispositif pour la formation de films

Publications (2)

Publication Number Publication Date
KR950704811A true KR950704811A (ko) 1995-11-20
KR0182089B1 KR0182089B1 (ko) 1999-04-15

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US (1) US5622566A (ko)
JP (1) JPH0786174A (ko)
KR (1) KR0182089B1 (ko)
WO (1) WO1995008185A1 (ko)

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US5622566A (en) 1997-04-22
WO1995008185A1 (fr) 1995-03-23
JPH0786174A (ja) 1995-03-31
KR0182089B1 (ko) 1999-04-15

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