KR950034561A - 반도체 표면 처리제 및 처리 방법 - Google Patents

반도체 표면 처리제 및 처리 방법 Download PDF

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KR950034561A
KR950034561A KR1019950001541A KR19950001541A KR950034561A KR 950034561 A KR950034561 A KR 950034561A KR 1019950001541 A KR1019950001541 A KR 1019950001541A KR 19950001541 A KR19950001541 A KR 19950001541A KR 950034561 A KR950034561 A KR 950034561A
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semiconductor surface
surface treatment
complexing agent
agent
treatment agent
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KR100278210B1 (ko
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이찌로 하야시다
마사히꼬 가끼자와
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다나까 모또아끼
와꼬쥰야꾸고오교 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 주성분으로 무기 또는 유기 알칼리, 과산화수소 및 물을 함유하는 반도체 표면 처리제로 반도체의 표면을 세정하는 단계, 및 초순수, 하나 이상의 반도체 표면 처리제 및 분자내에 3개 이상의

Description

반도체 표면 처리제 및 처리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 SC-1 처리용액중의 Al의 농도(ppb)와 실시예1과 비교예1에서 수득한 실리콘 와이퍼의 표면에 흡착된 Al의 양(atom/㎠)사이의 관계를 보여주는 그래프(프레운들릭 플로트(Freundlich plots))이다, 제2도는 1ppb의 Al을 함유한 SC-1 처리용액중의 착물화제의 농도(중량%)와 실시예2에서 수득한 실리콘 와이퍼 표면위에 흡착된 Al의 양(atom/㎠)사이의 관계를 보여주는 그래프이다.

Claims (19)

  1. 주성분으로 무기 또는 유기 알칼리, 과산화수소 및 물을 함유하는 반도체 표면 처리제로 반도체의 표면을 세정하는 단계, 및 초순수, 하나 이상의 반도체 표면 처리제 착물화제로서 분자내에 3개 이상의기를 가지고 있는 화합물 또는 그의 염을 함유한 초순수로 그 표면을 헹구는 단계로 구성되는 것을 특징으로 하는 반도체 표면 처리방법.
  2. 제1항에 있어서, 상기의 착물화제에 덧붙여, Fe를 제어할 수 있는 착물화제로서 분자내에 하나 이상의 인산기 또는 그의 염을 함유하거나 그의 산화 형태를 함유하는 킬레이트제, 또는 다인산 또는 그의 염의 존재하에 상기 처리과정을 수행하는 방법.
  3. 제1항에 있어서, 상기의 착물화제를 함유하고 있는 반도체 표면 처리제를 사용하여 세정을 수행하는 방법.
  4. 제1항에 있어서, 상기의 착물화제를 함유하고 있는 초순수를 사용하여 헹굼을 수행하는 방법.
  5. 무기 또는 유기 알칼리, 과산화수소, 물 및 착물화제로서 분자내에 3개 이상의기를 가지고 있는 화합물 또는 그의 염을 함유하는 것을 특징으로 하는 반도체 표면 처리제.
  6. 무기 또는 유기 알칼리, 과산화수소, 물, 제5항에 기재된 착물화제, 및 Fe를 제거할 수 있는 착물화제를 함유하는 것을 특징으로 하는 반도체 표면 처리제.
  7. 제5항에 있어서, 착물화제를 10-7내지 10-3중량%의 양으로 함유하고 있는 반도체 표면 처리제.
  8. 제5항에 있어서, 무기 또는 유기 알칼리가 암모니아 또는 4가 수산화암모늄인 반도체 표면 처리제.
  9. 제5항에 있어서, 무기 또는 유기 알칼리의 농도가 반도체 표면 처리제의 전체용액의 중량을 기준으로 0.01 내지 20중량%인 반도체 표면 처리제.
  10. 제5항에 있어서, 과산화수소의 농도가 반도체 표면 처리제의 전체용액의 중량을 기준으로 0.01 내지 30중량%인 반도체 표면 처리제.
  11. 제1항에 기재된 착물화제를 함유하고 있는 반도체 표면 처리제를 제조하기 위한 알칼리 수용액.
  12. 제11항에 있어서, 알칼리가 암모니아 또는 4가 수산화암모늄인 반도체 표면 처리제를 제조하기 위한 알칼리 수용액.
  13. 증류에 의한 정제 및 금속 불순물의 제거처리 후 제1항에 기재된 착물화제를 첨가함으로써 수득되는 반도체 표면 처리제를 제조하기 위한 과산화수소 용액.
  14. 제5항에 있어서, 착물화제가 N,N´,N˝―트리스[2-(N-피드록시카르바모일)에틸]-1,3,5-벤젠트리카르복사미드, 데스페르리크로신, 데스페르리마이신, 데스페르리옥사민 A, B, D1, D2, E 및 G, N-포르밀-데스페르리옥사민 E, N-아세틸-데스페르리옥사민 G, 데스페르리로딘, 데스페르리루빈, 데스페르리크롬, 데스페르리크롬 A, 데스페르리크리신, 및 이들 화합물들의 염산염, 이들 화합물들의 황산염, 이들 화합물들의 인산염, 이들 화합물들의 질산염, 이들 화합물들의 메탄술포네이트, 이들 화합물들의 에탄술포네이트, 이들 화합물들의 암모늄염, 및 이들 화합물들의 알칼리 금속염으로 구성된 군에서 선택된 하나 이상의 것인 반도체 표면 처리제.
  15. 반도체 표면 처리제의 구성 요소로서, 분자내에 3개 이상의기를 가지고 있는 화합물 또는 그의 염을 착물화제로 함유한 과산화수소 용액을 사용함으로써 반도체 표면을 처리하는 것을 특징으로 하는 반도체 표면 처리방법.
  16. 제15항에 있어서, 증류에 의한 정제 및 금속 불순물의 제거처리 이후에 착물화제로서 분자내에 3개 이상의기를 가지고 있는 화합물 또는 그의 염을 첨가함으로써 수득된 과산화수소 용액을 사용하는 방법.
  17. 반도체 표면 처리제의 구성 요소로서, 분자내에 3개 이상의기를 가지고 있는 화합물 또는 그의 염을 착물화제로 함유한 알칼리 수용액을 사용함으로써 반도체 표면을 처리하는 것을 특징으로 하는 반도체 표면 처리방법.
  18. 제17항에 있어서, 알칼리가 암모니아 또는 4가 수산화암모늄인 방법.
  19. 반도체 표면 처리제의 구성 요소로서, 분자내에 3개 이상의기를 가지고 있는 화합물 또는 그의 염을 착물화제로 함유한 물을 사용함으로써 반도체 표면을 처리하는 것을 특징으로 하는 반도체 표면 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950001541A 1994-01-28 1995-01-27 반도체표면처리제및처리방법 KR100278210B1 (ko)

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JP94-026291 1994-01-28
JP94-26291 1994-01-28
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DE69520296D1 (de) 2001-04-19
EP0665582A3 (ko) 1995-08-16
KR100278210B1 (ko) 2001-09-17
EP0665582A2 (en) 1995-08-02
DE69520296T2 (de) 2001-09-06
TW274630B (ko) 1996-04-21
EP0665582B1 (en) 2001-03-14
US5840127A (en) 1998-11-24
US5580846A (en) 1996-12-03

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