KR950010103A - 박막트랜지스터 및 그의 제조방법 - Google Patents

박막트랜지스터 및 그의 제조방법 Download PDF

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Publication number
KR950010103A
KR950010103A KR1019930018564A KR930018564A KR950010103A KR 950010103 A KR950010103 A KR 950010103A KR 1019930018564 A KR1019930018564 A KR 1019930018564A KR 930018564 A KR930018564 A KR 930018564A KR 950010103 A KR950010103 A KR 950010103A
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South Korea
Prior art keywords
gate
thin film
film transistor
electrode material
gate pad
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KR1019930018564A
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English (en)
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KR100292841B1 (ko
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강성구
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이헌조
주식회사 금성사
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Priority to KR1019930018564A priority Critical patent/KR100292841B1/ko
Publication of KR950010103A publication Critical patent/KR950010103A/ko
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Publication of KR100292841B1 publication Critical patent/KR100292841B1/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 박막트랜지스터 및 그의 제조방법에 관한것으로, 종래 박막트랜지스터는 게이트전극을 크롬(Cr)으로 사용할 경우 게이트전극에 전압을 인가하기 위해 게이트절연막을 식각하면 게이트 패드부가 대기중에 놀출되어 크롬과 대기중의 산호가 반응함에 따라 크롬이 녹기 때문에 게이트전극이 단선이 되는 문제점이 있었다.
본 발명은 이러한 문제점을 해결하기 위하여 게이트절연막을 식각함에 따라 게이트 패드부가 대기중 노출되는 것을 화소전극 형성시 또는 소오스/드레인전극 형성시케 화소전극물질이나 소오스/드레인전극물질로 상기 게이트 패드부를 덮어 그 게이트 패드부가 대기와 접촉하는 것을 막아 게이트전극의 단선을 방지하는 것이다.

Description

박막트랜지스터 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명 박막트랜지스터 구조도,
제5도의 (가) 내지 (라)는 제3도에 다른 제조공정도,
제6도의 (가) 내지 (라)는 제3도에 대한 다른 제조공정 실시도,
제7도의 (가)는 본 발명 게이트전극 접촉부의 단면도, (나)는 본 발명 게이트전극 접촉부의 평면도.

Claims (4)

  1. 액정표시소자용 박막트랜지스터에 있어서 게이트패드부가 게이트 전극물질과 화소전극물질의 이중 구조로 형성되는 것을 특징으로 하는 박막트랜지스터.
  2. 제1항에 있어서, 상기 화소전극물질 대신 소오스/드레인전극물질로 형성되는 것을 특징으로 하는 박막트랜지스터.
  3. 기판상에 게이트전극물질을 증착하여 게이트전극과 게이트 패드부를 형성하는 공정과, 게이트절연막과 활성층을 차례로 형성하는 공정과, 상기 게이트패드부 상부의 게이트절연막을 제거하는 공정과, 화소전극물질을 화소전극과 상기 게이트패드부상위에 형성하는 공정과, 소오스/드레인전극과 보호막을 차례로 형성하는 공정으로 이루어지는 것을 특징으로 하는 박막트랜지스터 제조방법.
  4. 제3항에 있어서, 화소전극물질을 게이트 패드부 위에 형성하는 대신에 소오스/드레인전극물질을 상기 게이트 패드부위에 형성하는 것을 특징으로 하는 박막트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930018564A 1993-09-15 1993-09-15 박막트랜지스터및그의제조방법 KR100292841B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930018564A KR100292841B1 (ko) 1993-09-15 1993-09-15 박막트랜지스터및그의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930018564A KR100292841B1 (ko) 1993-09-15 1993-09-15 박막트랜지스터및그의제조방법

Publications (2)

Publication Number Publication Date
KR950010103A true KR950010103A (ko) 1995-04-26
KR100292841B1 KR100292841B1 (ko) 2001-09-17

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Application Number Title Priority Date Filing Date
KR1019930018564A KR100292841B1 (ko) 1993-09-15 1993-09-15 박막트랜지스터및그의제조방법

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KR100292841B1 (ko) 2001-09-17

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