KR950009741B1 - 반도체 메모리 셀의 제조방법 및 그 구조 - Google Patents

반도체 메모리 셀의 제조방법 및 그 구조 Download PDF

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Publication number
KR950009741B1
KR950009741B1 KR1019910017726A KR910017726A KR950009741B1 KR 950009741 B1 KR950009741 B1 KR 950009741B1 KR 1019910017726 A KR1019910017726 A KR 1019910017726A KR 910017726 A KR910017726 A KR 910017726A KR 950009741 B1 KR950009741 B1 KR 950009741B1
Authority
KR
South Korea
Prior art keywords
capacitor
metal wiring
depositing
insulating film
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910017726A
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English (en)
Korean (ko)
Inventor
전영권
이창재
Original Assignee
금성일렉트론주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론주식회사, 문정환 filed Critical 금성일렉트론주식회사
Priority to KR1019910017726A priority Critical patent/KR950009741B1/ko
Priority to DE4232817A priority patent/DE4232817B4/de
Priority to JP26481492A priority patent/JP3397809B2/ja
Priority to US07/960,145 priority patent/US5409855A/en
Priority to TW081108247A priority patent/TW229323B/zh
Application granted granted Critical
Publication of KR950009741B1 publication Critical patent/KR950009741B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019910017726A 1991-10-10 1991-10-10 반도체 메모리 셀의 제조방법 및 그 구조 Expired - Fee Related KR950009741B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910017726A KR950009741B1 (ko) 1991-10-10 1991-10-10 반도체 메모리 셀의 제조방법 및 그 구조
DE4232817A DE4232817B4 (de) 1991-10-10 1992-09-30 Halbleiter-Speicherzelle und Verfahren zu deren Herstellung
JP26481492A JP3397809B2 (ja) 1991-10-10 1992-10-02 半導体メモリセルの製造方法
US07/960,145 US5409855A (en) 1991-10-10 1992-10-13 Process for forming a semiconductor device having a capacitor
TW081108247A TW229323B (enExample) 1991-10-10 1992-10-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910017726A KR950009741B1 (ko) 1991-10-10 1991-10-10 반도체 메모리 셀의 제조방법 및 그 구조

Publications (1)

Publication Number Publication Date
KR950009741B1 true KR950009741B1 (ko) 1995-08-26

Family

ID=19320988

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017726A Expired - Fee Related KR950009741B1 (ko) 1991-10-10 1991-10-10 반도체 메모리 셀의 제조방법 및 그 구조

Country Status (5)

Country Link
US (1) US5409855A (enExample)
JP (1) JP3397809B2 (enExample)
KR (1) KR950009741B1 (enExample)
DE (1) DE4232817B4 (enExample)
TW (1) TW229323B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605857A (en) * 1993-02-12 1997-02-25 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
US5563089A (en) * 1994-07-20 1996-10-08 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
JP2976842B2 (ja) * 1995-04-20 1999-11-10 日本電気株式会社 半導体記憶装置の製造方法
US5580811A (en) * 1995-05-03 1996-12-03 Hyundai Electronics Industries Co., Ltd. Method for the fabrication of a semiconductor memory device having a capacitor
JPH0917968A (ja) * 1995-06-27 1997-01-17 Mitsubishi Electric Corp 半導体装置とその製造方法
DE19624698C2 (de) * 1995-06-27 2002-03-14 Mitsubishi Electric Corp Halbleiterspeichereinrichtung und Verfahren zur Herstellung einer Halbleiterspeichereinrichtung
US5554557A (en) * 1996-02-02 1996-09-10 Vanguard International Semiconductor Corp. Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell
JP2800787B2 (ja) * 1996-06-27 1998-09-21 日本電気株式会社 半導体記憶装置の製造方法
JPH10209393A (ja) * 1997-01-22 1998-08-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3120750B2 (ja) * 1997-03-14 2000-12-25 日本電気株式会社 半導体装置およびその製造方法
US5989954A (en) * 1998-03-05 1999-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a cylinder capacitor in the dram process
JP3144381B2 (ja) 1998-05-19 2001-03-12 日本電気株式会社 半導体装置の製造方法
US5858829A (en) * 1998-06-29 1999-01-12 Vanguard International Semiconductor Corporation Method for fabricating dynamic random access memory (DRAM) cells with minimum active cell areas using sidewall-spacer bit lines
US6218256B1 (en) 1999-04-13 2001-04-17 Micron Technology, Inc. Electrode and capacitor structure for a semiconductor device and associated methods of manufacture
US6163047A (en) * 1999-07-12 2000-12-19 Vanguard International Semiconductor Corp. Method of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cell
KR100330714B1 (ko) * 1999-10-13 2002-04-03 윤종용 반도체 장치의 매몰 콘택 구조 및 그 형성방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180683A (en) * 1988-06-10 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing stacked capacitor type semiconductor memory device
JP2703275B2 (ja) * 1988-08-22 1998-01-26 株式会社日立製作所 半導体記憶装置
JP2508300B2 (ja) * 1988-12-08 1996-06-19 三菱電機株式会社 半導体記憶装置およびその製造方法
US5155057A (en) * 1990-11-05 1992-10-13 Micron Technology, Inc. Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line

Also Published As

Publication number Publication date
TW229323B (enExample) 1994-09-01
US5409855A (en) 1995-04-25
JPH05218347A (ja) 1993-08-27
DE4232817A1 (de) 1993-04-15
JP3397809B2 (ja) 2003-04-21
DE4232817B4 (de) 2005-07-14

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