KR950006974A - 폴리실리콘 층을 원위치에 균일하게 도핑하는 방법 - Google Patents

폴리실리콘 층을 원위치에 균일하게 도핑하는 방법 Download PDF

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Publication number
KR950006974A
KR950006974A KR1019940020479A KR19940020479A KR950006974A KR 950006974 A KR950006974 A KR 950006974A KR 1019940020479 A KR1019940020479 A KR 1019940020479A KR 19940020479 A KR19940020479 A KR 19940020479A KR 950006974 A KR950006974 A KR 950006974A
Authority
KR
South Korea
Prior art keywords
layer
doped
polysilicon
dopant
undoped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019940020479A
Other languages
English (en)
Korean (ko)
Inventor
엘. 와이즈 릭
디. 죤스톤 클라크
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR950006974A publication Critical patent/KR950006974A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H10P32/302—
    • H10P32/00—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
KR1019940020479A 1993-08-20 1994-08-19 폴리실리콘 층을 원위치에 균일하게 도핑하는 방법 Withdrawn KR950006974A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10977393A 1993-08-20 1993-08-20
US8/109,773 1993-08-20

Publications (1)

Publication Number Publication Date
KR950006974A true KR950006974A (ko) 1995-03-21

Family

ID=22329485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940020479A Withdrawn KR950006974A (ko) 1993-08-20 1994-08-19 폴리실리콘 층을 원위치에 균일하게 도핑하는 방법

Country Status (4)

Country Link
EP (1) EP0639856A1 (enExample)
JP (1) JPH07201771A (enExample)
KR (1) KR950006974A (enExample)
TW (1) TW243534B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
JPH10247725A (ja) 1997-03-05 1998-09-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE69739202D1 (de) * 1997-11-14 2009-02-26 St Microelectronics Srl Verfahren zur Abscheidung von in-situ dotierten Polysilizium-Schichten
CN109599450A (zh) 2013-04-03 2019-04-09 Lg电子株式会社 太阳能电池
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
US9722104B2 (en) 2014-11-28 2017-08-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
KR102272433B1 (ko) * 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138332A (ja) * 1983-01-28 1984-08-08 Seiko Instr & Electronics Ltd 半導体装置の製造方法
DE69125215T2 (de) * 1990-07-16 1997-08-28 Applied Materials Inc Verfahren zur Abscheidung einer hochdotierten Polysiliciumschicht auf eine stufenförmige Halbleiterwaferfläche, welches verbesserte Stufenbeschichtung liefert

Also Published As

Publication number Publication date
EP0639856A1 (en) 1995-02-22
TW243534B (enExample) 1995-03-21
JPH07201771A (ja) 1995-08-04

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000