KR950004435A - 반도체웨이퍼의 에지를 다듬질하는 방법 - Google Patents
반도체웨이퍼의 에지를 다듬질하는 방법 Download PDFInfo
- Publication number
- KR950004435A KR950004435A KR1019940017541A KR19940017541A KR950004435A KR 950004435 A KR950004435 A KR 950004435A KR 1019940017541 A KR1019940017541 A KR 1019940017541A KR 19940017541 A KR19940017541 A KR 19940017541A KR 950004435 A KR950004435 A KR 950004435A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor wafer
- edge
- diamond
- operating surface
- finish edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H10P90/128—
-
- H10P52/00—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H10P90/129—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4325518A DE4325518A1 (de) | 1993-07-29 | 1993-07-29 | Verfahren zur Glättung der Kante von Halbleiterscheiben |
| DE93-P4325518.3 | 1993-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950004435A true KR950004435A (ko) | 1995-02-18 |
Family
ID=6494026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940017541A Ceased KR950004435A (ko) | 1993-07-29 | 1994-07-20 | 반도체웨이퍼의 에지를 다듬질하는 방법 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0760624A (enExample) |
| KR (1) | KR950004435A (enExample) |
| CN (1) | CN1103511A (enExample) |
| DE (1) | DE4325518A1 (enExample) |
| IT (1) | IT1272345B (enExample) |
| MY (1) | MY130149A (enExample) |
| TW (1) | TW260812B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030043697A (ko) * | 2001-11-26 | 2003-06-02 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 및 연마 장치 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11245151A (ja) * | 1998-02-27 | 1999-09-14 | Speedfam Co Ltd | ワークの外周研磨装置 |
| JP3197253B2 (ja) * | 1998-04-13 | 2001-08-13 | 株式会社日平トヤマ | ウエーハの面取り方法 |
| JP2000158315A (ja) * | 1998-11-27 | 2000-06-13 | Speedfam-Ipec Co Ltd | 端面研磨装置におけるノッチ研磨装置のノッチ研磨方法 |
| KR20000076987A (ko) * | 1999-03-31 | 2000-12-26 | 다구마시로오 | 피가공물 연삭방법 및 장치 |
| JP3510584B2 (ja) * | 2000-11-07 | 2004-03-29 | スピードファム株式会社 | 円板形ワークの外周研磨装置 |
| JP2002329687A (ja) * | 2001-05-02 | 2002-11-15 | Speedfam Co Ltd | デバイスウエハの外周研磨装置及び研磨方法 |
| JP5112703B2 (ja) * | 2007-01-18 | 2013-01-09 | ダイトエレクトロン株式会社 | ウェーハ面取り加工方法およびその装置 |
| DE102009030294B4 (de) | 2009-06-24 | 2013-04-25 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
| JP2011194561A (ja) * | 2010-02-26 | 2011-10-06 | Nakamura Tome Precision Ind Co Ltd | 円盤状ワークの面取装置 |
| CN102642253B (zh) * | 2012-05-04 | 2014-12-10 | 上海华力微电子有限公司 | 一种硅片切边方法及其装置 |
| SG11201406456XA (en) * | 2012-05-07 | 2015-02-27 | Shinetsu Handotai Kk | Outer periphery polishing apparatus for disk-shaped workpiece |
| DE102013210057A1 (de) | 2013-05-29 | 2014-12-04 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
| JP7562994B2 (ja) * | 2020-06-08 | 2024-10-08 | 株式会社Sumco | ウェーハ外周部の研磨装置 |
| CN113182971B (zh) * | 2021-05-12 | 2022-11-25 | 四川雅吉芯电子科技有限公司 | 一种单晶硅外延片高精度磨边装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184662A (en) * | 1981-05-09 | 1982-11-13 | Hitachi Ltd | Chamfering method and device of wafer |
| JPS5958827A (ja) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置 |
| JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
| US5128281A (en) * | 1991-06-05 | 1992-07-07 | Texas Instruments Incorporated | Method for polishing semiconductor wafer edges |
| DE4120003A1 (de) * | 1991-06-18 | 1992-12-24 | Mueller Georg Nuernberg | Vorrichtung und verfahren zum kantenverrunden von halbleiterronden |
| US5185965A (en) * | 1991-07-12 | 1993-02-16 | Daito Shoji Co., Ltd. | Method and apparatus for grinding notches of semiconductor wafer |
-
1993
- 1993-07-29 DE DE4325518A patent/DE4325518A1/de not_active Withdrawn
-
1994
- 1994-06-16 MY MYPI94001563A patent/MY130149A/en unknown
- 1994-06-30 CN CN94107806A patent/CN1103511A/zh active Pending
- 1994-07-12 TW TW083106329A patent/TW260812B/zh active
- 1994-07-20 KR KR1019940017541A patent/KR950004435A/ko not_active Ceased
- 1994-07-20 JP JP6189009A patent/JPH0760624A/ja active Pending
- 1994-07-27 IT ITRM940495A patent/IT1272345B/it active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030043697A (ko) * | 2001-11-26 | 2003-06-02 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 및 연마 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1272345B (it) | 1997-06-16 |
| ITRM940495A1 (it) | 1996-01-27 |
| CN1103511A (zh) | 1995-06-07 |
| TW260812B (enExample) | 1995-10-21 |
| ITRM940495A0 (it) | 1994-07-27 |
| JPH0760624A (ja) | 1995-03-07 |
| DE4325518A1 (de) | 1995-02-02 |
| MY130149A (en) | 2007-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |