KR940701462A - 기재상에 금속을 부착시키기 위한 유기금속 화합물의 사용방법 - Google Patents
기재상에 금속을 부착시키기 위한 유기금속 화합물의 사용방법Info
- Publication number
- KR940701462A KR940701462A KR1019930703987A KR930703987A KR940701462A KR 940701462 A KR940701462 A KR 940701462A KR 1019930703987 A KR1019930703987 A KR 1019930703987A KR 930703987 A KR930703987 A KR 930703987A KR 940701462 A KR940701462 A KR 940701462A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- compound
- formula
- metal
- independently
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract 8
- 239000002184 metal Substances 0.000 title claims abstract 8
- 150000002902 organometallic compounds Chemical class 0.000 title claims abstract 8
- 239000000758 substrate Substances 0.000 title claims abstract 4
- 150000002739 metals Chemical class 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract 8
- 150000001875 compounds Chemical class 0.000 claims abstract 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims 2
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 125000000392 cycloalkenyl group Chemical group 0.000 claims 2
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 claims 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical group C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 239000003446 ligand Substances 0.000 claims 2
- 230000007935 neutral effect Effects 0.000 claims 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/02—Magnesium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/10—Mercury compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP4213292.4 | 1992-04-23 | ||
| DE4213292A DE4213292A1 (de) | 1992-04-23 | 1992-04-23 | Verwendung von metallorganischen Verbindungen zur Abscheidung des Metalls auf Substraten |
| PCT/EP1993/000940 WO1993022472A1 (de) | 1992-04-23 | 1993-04-19 | Verwendung von metallorganischen verbindungen zur abscheidung des metalls auf substraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR940701462A true KR940701462A (ko) | 1994-05-28 |
Family
ID=6457277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930703987A KR940701462A (ko) | 1992-04-23 | 1993-04-19 | 기재상에 금속을 부착시키기 위한 유기금속 화합물의 사용방법 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0591496A1 (de) |
| JP (1) | JPH06508890A (de) |
| KR (1) | KR940701462A (de) |
| DE (1) | DE4213292A1 (de) |
| WO (1) | WO1993022472A1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130160A (en) | 1996-10-02 | 2000-10-10 | Micron Technology, Inc. | Methods, complexes and system for forming metal-containing films |
| US5924012A (en) | 1996-10-02 | 1999-07-13 | Micron Technology, Inc. | Methods, complexes, and system for forming metal-containing films |
| US6214729B1 (en) | 1998-09-01 | 2001-04-10 | Micron Technology, Inc. | Metal complexes with chelating C-, N-donor ligands for forming metal-containing films |
| US6281124B1 (en) | 1998-09-02 | 2001-08-28 | Micron Technology, Inc. | Methods and systems for forming metal-containing films on substrates |
| WO2015136365A1 (en) * | 2014-03-12 | 2015-09-17 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Heteroleptic diazadienyl group 4 transition metal-containing compounds for vapor deposition of group 4 transition metal-containing films |
| KR20240011985A (ko) * | 2022-07-20 | 2024-01-29 | 엠케미칼 주식회사 | 신규한 몰리브덴 화합물, 이의 제조방법 및 이를 포함하는 몰리브덴 함유 박막의 제조방법 |
| WO2024107593A1 (en) | 2022-11-18 | 2024-05-23 | Merck Patent Gmbh | Intramolecular stabilized group 13 metal complexes with improved thermal stability for vapor phase thin-film deposition techniques |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB984363A (en) * | 1961-06-23 | 1965-02-24 | Wellcome Found | Organic chemical compounds and methods |
| US4057565A (en) * | 1975-07-22 | 1977-11-08 | E. I. Du Pont De Nemours And Company | 2-Dialkylaminobenzyl and 2-dialkylaminomethylphenyl derivatives of selected transition metals |
| GB8819761D0 (en) * | 1988-08-19 | 1988-09-21 | Secr Defence | Growth of znse & zns layers |
| DE3841643C2 (de) * | 1988-12-10 | 1999-07-01 | Merck Patent Gmbh | Metallorganische Verbindungen und deren Verwendung |
-
1992
- 1992-04-23 DE DE4213292A patent/DE4213292A1/de not_active Withdrawn
-
1993
- 1993-04-19 KR KR1019930703987A patent/KR940701462A/ko not_active Application Discontinuation
- 1993-04-19 EP EP93908955A patent/EP0591496A1/de not_active Ceased
- 1993-04-19 JP JP5518874A patent/JPH06508890A/ja active Pending
- 1993-04-19 WO PCT/EP1993/000940 patent/WO1993022472A1/de not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE4213292A1 (de) | 1993-10-28 |
| WO1993022472A1 (de) | 1993-11-11 |
| EP0591496A1 (de) | 1994-04-13 |
| JPH06508890A (ja) | 1994-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |