KR940701462A - How to Use Organometallic Compounds to Attach Metals to Substrates - Google Patents

How to Use Organometallic Compounds to Attach Metals to Substrates

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Publication number
KR940701462A
KR940701462A KR1019930703987A KR930703987A KR940701462A KR 940701462 A KR940701462 A KR 940701462A KR 1019930703987 A KR1019930703987 A KR 1019930703987A KR 930703987 A KR930703987 A KR 930703987A KR 940701462 A KR940701462 A KR 940701462A
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South Korea
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group
compound
formula
metal
independently
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KR1019930703987A
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Korean (ko)
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폴 루드비히
슈만 헤르베르트
바세르만 빌프리트
소이스 토마스
유스트 올리버
Original Assignee
위르겐 호이만, 라인하르트 슈틀러
메르크 파텐트 게젤샤프트 미트 베쉬랭크터 하프퉁
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Publication of KR940701462A publication Critical patent/KR940701462A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/02—Magnesium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/10—Mercury compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 고안은 기재상에 금속을 부착시키기 위한, 금속으로서 2족 또는 4족의 주 그룹의 원소, 1족 내지 8족의 부 그룹의 원소, 희토류의 원소 또는 비스무트를 함유하는 유기금속 화합물의 사용방법, 및 또한 이러한 유형의 신규한 화합물에 관한 것이다.The present invention provides a method for using an organometallic compound containing an element of Group 2 or 4, a Group 1 to Group 8 group, a rare earth element or bismuth as a metal for attaching a metal on a substrate. And also novel compounds of this type.

Description

기재상에 금속을 부착시키기 위한 유기금속 화합물의 사용방법How to Use Organometallic Compounds to Attach Metals to Substrates

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (8)

스핀-온(spin-on) 또는 기체상 부착에 의해 금속을 기재상에 부착시키기 위한 하기 일반식(I)의 유기 금속 화합물의 사용방법:Use of organometallic compounds of the general formula (I) below for depositing metal onto a substrate by spin-on or gas phase deposition: 상기식에서, R1은 H 부분적으로 또는 완전히 불소화될 수 있는 C1-C8알킬 그룹, C3-C8사이클로알킬 또는 사이클로 알케닐 그룹, 또는 아릴 그룹이고, M은 희토류를 포함한 그룹중 2족 또는 4족의 주그룹의 금속, 1 내지 8족의 부그룹의 금속, 또는 비스무트이고, n은 1, 2, 3 또는 4이며, o는 0, 1, 2 또는 3이고, n+o는 금속의 산화상태에 상응하고, Z는 -X-Y 또는이며, X는 -(CH2)m-, -NR2-,또는이고, X′는,,또는이고, A는 사이클로헥산, 사이클로헥센, 사이클로헥사디엔 또는 페닐 고리이고, B는 사이클로펜탄, 사이클로펜텐 또는 사이클로펜타디엔 고리이며, Y 및 Y′는 각각 서로 독립적으로 -(CH2)5-NR3R4, -(CH2)5PR3R4, -C1-C8알킬 그룹이고, R3및 R4는 각각 서로 독립적으로 H, F, 또는 부분적으로 또는 완전히 불소화될 수 있는 C1-C8알킬 그룹이고, R3및 R4는 각각 서로 독립적으로 H, 부분적으로 또는 완전히 불소화될 수 있는 C1-C8알킬 그룹, C3-C8사이클로알킬 또는 사이클로알케닐 그룹, 또는 아릴 그룹이며, m은 1, 2, 3 또는 4이고, s, r, p 및 q는 각각 서로 독립적으로 0, 1, 2 또는 3이고, 또한 일반식(I)의 혼합물에는 하나이상의 중성 리간드가 결합될 수도 있으며, 단 M이 Zn인 경우, X는 -(CHR2)n-이 아니다.Wherein R 1 is a C 1 -C 8 alkyl group, a C 3 -C 8 cycloalkyl or a cyclo alkenyl group, or an aryl group, which may be partially or fully fluorinated, and M is a group 2 of the group comprising rare earths Or a metal of a group 4 main group, a metal of a group 1-8, or bismuth, n is 1, 2, 3 or 4, o is 0, 1, 2 or 3, and n + o is a metal Corresponds to the oxidation state of, Z is -XY or X is-(CH 2 ) m- , -NR 2- , or And X ′ is , , or , A is a cyclohexane, cyclohexene, cyclohexadiene or phenyl ring, B is a cyclopentane, cyclopentene or cyclopentadiene ring, and Y and Y 'are each independently of the other-(CH 2 ) 5 -NR 3 R 4 ,-(CH 2 ) 5 PR 3 R 4 , -C 1 -C 8 alkyl group, R 3 and R 4 are each independently of each other H, F, or C 1 -which may be partially or fully fluorinated Are C 8 alkyl groups, R 3 and R 4 are each independently of each other H, a C 1 -C 8 alkyl group that can be partially or fully fluorinated, a C 3 -C 8 cycloalkyl or cycloalkenyl group, or an aryl group M is 1, 2, 3 or 4, s, r, p and q are each independently 0, 1, 2 or 3, and the mixture of general formula (I) is bound to one or more neutral ligands. It is also possible, provided that when M is Zn, X is not-(CHR 2 ) n- . 에피택셜(epitaxial)층을 부착시키기 위한 제1항에 따른 일반식(I)의 유기금속 화합물의 사용방법.A method of using the organometallic compound of formula (I) according to claim 1 for attaching an epitaxial layer. 유기금속 화합물로부터 금속의 부착에 의해 기재상에 얇은 필름 또는 층을 제조하는 방법에 있어서, 사용되는 유기금속 화합물이 제1항에 따른 일반식(I)의 화합물임을 특징으로 하는 방법.A process for producing a thin film or layer on a substrate by adhesion of a metal from an organometallic compound, wherein the organometallic compound used is a compound of formula (I) according to claim 1. 제1항에 있어서, 전기, 유기, 전자, 광학 및 광전 시스템을 제조할 목적으로, 적용된 반응조건에 적합한 비소, 안티몬 또는 인의 화합물 하나이상을 부착 공정중에 공급함을 특징으로 하는 방법.The method of claim 1, wherein at least one compound of arsenic, antimony or phosphorus suitable for the applied reaction conditions is supplied during the attachment process for the purpose of producing electrical, organic, electronic, optical and photovoltaic systems. 제4항에 있어서, 상기 일반식(I)의 유기금속 화합물 이외에 도판트를 부착공정중에 첨가함을 특징으로 하는 방법.The method according to claim 4, wherein a dopant is added during the deposition process in addition to the organometallic compound of the general formula (I). 제4항에 있어서, 제1항에 따른 일반식(I)의 화합물을 도판트로서 기타 유기금속 화합물의 부착 공정중에 첨가함을 특징으로 하는 방법.The process according to claim 4, wherein the compound of formula (I) according to claim 1 is added as a dopant during the attachment process of other organometallic compounds. 하기 일반식(II)의 화합물:A compound of formula (II) 상기식에서, R1, O, M, X′,Y, Y′ 및 n은 제1항의 일반식(I)에 대해 정의한 의미를 갖는다.In the above formula, R 1 , O, M, X ', Y, Y' and n have the meanings defined for general formula (I) of claim 1. 제7항에 있어서, 하나이상의 중성 리간드가 또한 배위 결합됨을 특징으로 하는 화합물.8. A compound according to claim 7, wherein at least one neutral ligand is also coordinatively bound. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930703987A 1992-04-23 1993-04-19 How to Use Organometallic Compounds to Attach Metals to Substrates KR940701462A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4213292A DE4213292A1 (en) 1992-04-23 1992-04-23 Use of organometallic compounds to deposit the metal on substrates
DEP4213292.4 1992-04-23
PCT/EP1993/000940 WO1993022472A1 (en) 1992-04-23 1993-04-19 Use of organo-metallic compounds for precipitating metals on substrates

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KR940701462A true KR940701462A (en) 1994-05-28

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EP (1) EP0591496A1 (en)
JP (1) JPH06508890A (en)
KR (1) KR940701462A (en)
DE (1) DE4213292A1 (en)
WO (1) WO1993022472A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5924012A (en) 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US6130160A (en) 1996-10-02 2000-10-10 Micron Technology, Inc. Methods, complexes and system for forming metal-containing films
US6214729B1 (en) 1998-09-01 2001-04-10 Micron Technology, Inc. Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
US6281124B1 (en) 1998-09-02 2001-08-28 Micron Technology, Inc. Methods and systems for forming metal-containing films on substrates
US20170018425A1 (en) * 2014-03-12 2017-01-19 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Heteroleptic diazadienyl group 4 transition metal-containing compounds for vapor deposition of group 4 transition metal-containing films
KR20240011985A (en) * 2022-07-20 2024-01-29 엠케미칼 주식회사 Novel molybdenum compound, manufacturing method thereof, and manufacturing method of a molybdenum-containing thin film comprising the same
WO2024107593A1 (en) 2022-11-18 2024-05-23 Merck Patent Gmbh Intramolecular stabilized group 13 metal complexes with improved thermal stability for vapor phase thin-film deposition techniques

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GB984363A (en) * 1961-06-23 1965-02-24 Wellcome Found Organic chemical compounds and methods
US4057565A (en) * 1975-07-22 1977-11-08 E. I. Du Pont De Nemours And Company 2-Dialkylaminobenzyl and 2-dialkylaminomethylphenyl derivatives of selected transition metals
GB8819761D0 (en) * 1988-08-19 1988-09-21 Secr Defence Growth of znse & zns layers
DE3841643C2 (en) * 1988-12-10 1999-07-01 Merck Patent Gmbh Organometallic compounds and their use

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DE4213292A1 (en) 1993-10-28
WO1993022472A1 (en) 1993-11-11
JPH06508890A (en) 1994-10-06
EP0591496A1 (en) 1994-04-13

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