KR940016842A - 반도체메모리 - Google Patents

반도체메모리 Download PDF

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Publication number
KR940016842A
KR940016842A KR1019930027945A KR930027945A KR940016842A KR 940016842 A KR940016842 A KR 940016842A KR 1019930027945 A KR1019930027945 A KR 1019930027945A KR 930027945 A KR930027945 A KR 930027945A KR 940016842 A KR940016842 A KR 940016842A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
fuse
standby current
controlling
memory according
Prior art date
Application number
KR1019930027945A
Other languages
English (en)
Inventor
가쓰야 나가시마
히사노부 쓰가자끼
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR940016842A publication Critical patent/KR940016842A/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

스탠드바이전류불량을 구제가능하게 하는 반도체메모리를 제공한다.
비트선 b1, b2에 pMOS 트랜지스터 Q1, Q2를 설치하고, 양 트랜지스터 Q1, Q2의 게이트전류를 프로그램수단 P으로 제어함으로써, 비트선이 그라운드와 쇼트하고 있는 경우의 스탠드바이전류불량을 해소한다.

Description

반도체메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 실시예의 요부를 나타낸 회로도, 제 2 도는 본 발명의 실시예의 요부를 나타낸 회로도.

Claims (3)

  1. 스탠드바이시에 비트선에 전원을 접속하는 스위치수단과, 이 스위치수단의 온·오프를 제어하는 프로그램수단을 구비하는 것을 특징으로 하는 반도체메모리.
  2. 제 1 항에 있어서, 상기 프로그램수단은 퓨즈를 구비하고, 이 퓨즈의 단선에 의해 상기 스위치수단을 오프로 제어하는 것을 특징으로 하는 반도체메모리.
  3. 제 1 항에 있어서, 상기 프로그램수단은 센스앰프 단위로 설정되는 것을 특징으로 하는 반도체메모리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930027945A 1992-12-25 1993-12-16 반도체메모리 KR940016842A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4345779A JPH06195997A (ja) 1992-12-25 1992-12-25 半導体メモリ
JP92-345,779 1992-12-25

Publications (1)

Publication Number Publication Date
KR940016842A true KR940016842A (ko) 1994-07-25

Family

ID=18378921

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930027945A KR940016842A (ko) 1992-12-25 1993-12-16 반도체메모리

Country Status (3)

Country Link
US (1) US5414668A (ko)
JP (1) JPH06195997A (ko)
KR (1) KR940016842A (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5768206A (en) * 1995-06-07 1998-06-16 Sgs-Thomson Microelectronics, Inc. Circuit and method for biasing bit lines
KR0157339B1 (ko) * 1995-06-28 1998-12-01 김광호 반도체 메모리의 불량셀 구제회로
US5659511A (en) * 1996-05-06 1997-08-19 United Microelectronics Corporation Method for measuring the current leakage of a dynamic random access memory capacitive junction
JP2001101893A (ja) 1999-09-29 2001-04-13 Mitsubishi Electric Corp スタティック型半導体記憶装置
KR100372250B1 (ko) * 1999-11-02 2003-02-19 삼성전자주식회사 반도체 메모리 장치
KR20020060788A (ko) * 2001-01-12 2002-07-19 (주)이엠엘에스아이 대기 전력이 감소되는 반도체 메모리 장치 및 이에적용되는 리던던트 디코더

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186175A3 (en) * 1984-12-24 1989-02-08 Nec Corporation Semiconductor memory device having improved redundant structure
US4829481A (en) * 1985-08-20 1989-05-09 Sgs-Thomson Microelectronics, Inc. Defective element disabling circuit having a laser-blown fuse
US4685086A (en) * 1985-11-14 1987-08-04 Thomson Components-Mostek Corp. Memory cell leakage detection circuit
US5235548A (en) * 1989-04-13 1993-08-10 Dallas Semiconductor Corp. Memory with power supply intercept in redundancy logic

Also Published As

Publication number Publication date
JPH06195997A (ja) 1994-07-15
US5414668A (en) 1995-05-09

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Effective date: 20030630