KR940010309A - 박막 트랜지스터 및 이의 제조방법 - Google Patents

박막 트랜지스터 및 이의 제조방법 Download PDF

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KR940010309A
KR940010309A KR1019920019479A KR920019479A KR940010309A KR 940010309 A KR940010309 A KR 940010309A KR 1019920019479 A KR1019920019479 A KR 1019920019479A KR 920019479 A KR920019479 A KR 920019479A KR 940010309 A KR940010309 A KR 940010309A
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South Korea
Prior art keywords
thin film
film transistor
gate electrode
forming
alxoy
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KR1019920019479A
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KR960001616B1 (ko
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권순길
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김광호
삼성전자 주식회사
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Publication of KR940010309A publication Critical patent/KR940010309A/ko
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Publication of KR960001616B1 publication Critical patent/KR960001616B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

절연성 투명 기판위에 패터닝된 Ta재질의 게이트 전극의 형성단계; 전면에 Al을 증착하여 양극산화를 실시하므로써 상기 게이트 전극 상에 TaOx막과 AlxOy막의 2중 절연층을 형성하는 단계; 이 위에 반도체층 및 소오스/드레인 전극 형성단계로 이루어져 소자를 형성함을 특징으로 하는 박막트랜지스터 제조방법에 관한 것.

Description

박막 트랜지스터 및 이의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 박막트랜지스터 단면 구조도.

Claims (5)

  1. 절연선 투명 기판위에 패터닝된 Ta 재질의 게이트 전극의 형성단계; 전면에 Al을 증착하여 양극산화를 실시하므로써 상기 게이드 전극 상에 TaOx막과 AlxOy막의 2중 절연층을 형성하는 단계; 이 위에 반도체층 및 소오스/드레인 전극 형성단계로 이루어져 소자를 형성함을 특징으로 하는 박막트랜지스터 제조방법.
  2. 제1항에 있어서, 양극산화에 의한 2중의 절연층 상에 SiNx 절연층이 또한 형성함을 특징으로 하는 박막트랜지스터 제조방법.
  3. 제1항에 있어서, 상기 게이트 전극은 MoTa로 형성됨은 특징으르 하는 박막트랜지스터 제조방법.
  4. 절연성 투명 기판위에 패턴 형성된 게이트 전극과, 이 위에 형성된 TaOx 및 AlxOy 절연층과, 이 위의 반도체층 및 드레인/소오스 전극으로 구걸된 것을 특징으로 하는 박막트랜지스터.
  5. 제4항에 있어서, 상기 게이트 전극은 Ta 또는 MoTa 재질중 어느 하나로 형성됨을 특징으로 하는 박막트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920019479A 1992-10-22 1992-10-22 박막 트랜지스터 및 이의 제조방법 KR960001616B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920019479A KR960001616B1 (ko) 1992-10-22 1992-10-22 박막 트랜지스터 및 이의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920019479A KR960001616B1 (ko) 1992-10-22 1992-10-22 박막 트랜지스터 및 이의 제조방법

Publications (2)

Publication Number Publication Date
KR940010309A true KR940010309A (ko) 1994-05-26
KR960001616B1 KR960001616B1 (ko) 1996-02-02

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KR1019920019479A KR960001616B1 (ko) 1992-10-22 1992-10-22 박막 트랜지스터 및 이의 제조방법

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KR960001616B1 (ko) 1996-02-02

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