KR940008030A - 기밀 밀봉된 집적회로 - Google Patents

기밀 밀봉된 집적회로 Download PDF

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Publication number
KR940008030A
KR940008030A KR1019930019278A KR930019278A KR940008030A KR 940008030 A KR940008030 A KR 940008030A KR 1019930019278 A KR1019930019278 A KR 1019930019278A KR 930019278 A KR930019278 A KR 930019278A KR 940008030 A KR940008030 A KR 940008030A
Authority
KR
South Korea
Prior art keywords
containing ceramics
silicon
integrated circuit
group
bond pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019930019278A
Other languages
English (en)
Korean (ko)
Inventor
윈턴 마이클 키쓰
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노만 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노만 에드워드 루이스
Publication of KR940008030A publication Critical patent/KR940008030A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
KR1019930019278A 1992-09-23 1993-09-22 기밀 밀봉된 집적회로 Ceased KR940008030A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/948,570 US5825078A (en) 1992-09-23 1992-09-23 Hermetic protection for integrated circuits
US07/948,570 1992-09-23

Publications (1)

Publication Number Publication Date
KR940008030A true KR940008030A (ko) 1994-04-28

Family

ID=25488012

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930019278A Ceased KR940008030A (ko) 1992-09-23 1993-09-22 기밀 밀봉된 집적회로

Country Status (6)

Country Link
US (1) US5825078A (enExample)
EP (1) EP0589678A3 (enExample)
JP (1) JPH06204282A (enExample)
KR (1) KR940008030A (enExample)
CA (1) CA2106694A1 (enExample)
TW (1) TW232095B (enExample)

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EP0720223B1 (en) * 1994-12-30 2003-03-26 STMicroelectronics S.r.l. Process for the production of a semiconductor device having better interface adhesion between dielectric layers
US5960306A (en) * 1995-12-15 1999-09-28 Motorola, Inc. Process for forming a semiconductor device
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5956605A (en) * 1996-09-20 1999-09-21 Micron Technology, Inc. Use of nitrides for flip-chip encapsulation
DE19718618C2 (de) * 1997-05-02 1999-12-02 Daimler Chrysler Ag Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur
DE19718517C2 (de) * 1997-05-02 2000-08-10 Daimler Chrysler Ag Verfahren zum Aufbringen von Diamant auf einem mikroelektronischen Bauteil
US6150719A (en) * 1997-07-28 2000-11-21 General Electric Company Amorphous hydrogenated carbon hermetic structure and fabrication method
US6046101A (en) * 1997-12-31 2000-04-04 Intel Corporation Passivation technology combining improved adhesion in passivation and a scribe street without passivation
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6352940B1 (en) * 1998-06-26 2002-03-05 Intel Corporation Semiconductor passivation deposition process for interfacial adhesion
FR2782388B1 (fr) * 1998-08-11 2000-11-03 Trixell Sas Detecteur de rayonnement a l'etat solide a duree de vie accrue
US6605526B1 (en) 2000-03-16 2003-08-12 International Business Machines Corporation Wirebond passivation pad connection using heated capillary
US6263930B1 (en) * 2000-04-11 2001-07-24 Scott A. Wiley Stump grinder
US7127286B2 (en) * 2001-02-28 2006-10-24 Second Sight Medical Products, Inc. Implantable device using ultra-nanocrystalline diamond
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6777349B2 (en) * 2002-03-13 2004-08-17 Novellus Systems, Inc. Hermetic silicon carbide
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
US20060121717A1 (en) * 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding structure and fabrication thereof
US7612457B2 (en) * 2007-06-21 2009-11-03 Infineon Technologies Ag Semiconductor device including a stress buffer
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
US9340880B2 (en) 2009-10-27 2016-05-17 Silcotek Corp. Semiconductor fabrication process
JP5735522B2 (ja) 2009-10-27 2015-06-17 シルコテック コーポレイション 化学気相成長コーティング、物品、及び方法
US9975143B2 (en) 2013-05-14 2018-05-22 Silcotek Corp. Chemical vapor deposition functionalization
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10316408B2 (en) 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
US10323321B1 (en) 2016-01-08 2019-06-18 Silcotek Corp. Thermal chemical vapor deposition process and coated article
US10487403B2 (en) 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article

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US4001872A (en) * 1973-09-28 1977-01-04 Rca Corporation High-reliability plastic-packaged semiconductor device
JPS5748247A (en) * 1980-09-05 1982-03-19 Oki Electric Ind Co Ltd Semiconductor integrated circuit device
JPS58166748A (ja) * 1982-03-29 1983-10-01 Hitachi Ltd 半導体装置
US4622576A (en) * 1984-10-22 1986-11-11 National Semiconductor Corporation Conductive non-metallic self-passivating non-corrodable IC bonding pads
US4972251A (en) * 1985-08-14 1990-11-20 Fairchild Camera And Instrument Corp. Multilayer glass passivation structure and method for forming the same
GB2184288A (en) * 1985-12-16 1987-06-17 Nat Semiconductor Corp Oxidation inhibition of copper bonding pads using palladium
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JPS6461934A (en) * 1987-09-02 1989-03-08 Nippon Denso Co Semiconductor device and manufacture thereof
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre
US4986878A (en) * 1988-07-19 1991-01-22 Cypress Semiconductor Corp. Process for improved planarization of the passivation layers for semiconductor devices
US5104820A (en) * 1989-07-07 1992-04-14 Irvine Sensors Corporation Method of fabricating electronic circuitry unit containing stacked IC layers having lead rerouting
US5177589A (en) * 1990-01-29 1993-01-05 Hitachi, Ltd. Refractory metal thin film having a particular step coverage factor and ratio of surface roughness
JP2814009B2 (ja) * 1990-06-05 1998-10-22 三菱電機株式会社 半導体装置の製造方法
US5130275A (en) * 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
US5117273A (en) * 1990-11-16 1992-05-26 Sgs-Thomson Microelectronics, Inc. Contact for integrated circuits
JP2593965B2 (ja) * 1991-01-29 1997-03-26 三菱電機株式会社 半導体装置
US5136364A (en) * 1991-06-12 1992-08-04 National Semiconductor Corporation Semiconductor die sealing

Also Published As

Publication number Publication date
EP0589678A2 (en) 1994-03-30
CA2106694A1 (en) 1994-03-24
TW232095B (enExample) 1994-10-11
US5825078A (en) 1998-10-20
EP0589678A3 (en) 1995-04-12
JPH06204282A (ja) 1994-07-22

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