KR940004616B1 - 실온(室溫)에서 유동성 단량체(單量體)를 기화시키기 위한 방법과 장치 - Google Patents

실온(室溫)에서 유동성 단량체(單量體)를 기화시키기 위한 방법과 장치 Download PDF

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Publication number
KR940004616B1
KR940004616B1 KR1019890014142A KR890014142A KR940004616B1 KR 940004616 B1 KR940004616 B1 KR 940004616B1 KR 1019890014142 A KR1019890014142 A KR 1019890014142A KR 890014142 A KR890014142 A KR 890014142A KR 940004616 B1 KR940004616 B1 KR 940004616B1
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South Korea
Prior art keywords
monomer
capillary action
vaporizing
flowable
chamber
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Expired - Fee Related
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KR1019890014142A
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English (en)
Korean (ko)
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KR900004370A (ko
Inventor
후슬라 인고
리터 요헨
Original Assignee
레이볼드 앗크티엔게젤샤프트
원본미기재
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B01D3/10—Vacuum distillation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
KR1019890014142A 1988-09-30 1989-09-30 실온(室溫)에서 유동성 단량체(單量體)를 기화시키기 위한 방법과 장치 Expired - Fee Related KR940004616B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3833232A DE3833232A1 (de) 1988-09-30 1988-09-30 Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren
DEP3833232.9 1988-09-30

Publications (2)

Publication Number Publication Date
KR900004370A KR900004370A (ko) 1990-04-12
KR940004616B1 true KR940004616B1 (ko) 1994-05-27

Family

ID=6364075

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014142A Expired - Fee Related KR940004616B1 (ko) 1988-09-30 1989-09-30 실온(室溫)에서 유동성 단량체(單量體)를 기화시키기 위한 방법과 장치

Country Status (5)

Country Link
US (2) US4947789A (https=)
EP (1) EP0361171B1 (https=)
JP (1) JPH02213478A (https=)
KR (1) KR940004616B1 (https=)
DE (2) DE3833232A1 (https=)

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US5487918A (en) * 1990-05-14 1996-01-30 Akhtar; Masud Method of depositing metal oxides
DE4124018C1 (https=) * 1991-07-19 1992-11-19 Leybold Ag, 6450 Hanau, De
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
EP0585848A1 (de) * 1992-09-02 1994-03-09 Hoechst Aktiengesellschaft Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner Schichten
DE4236324C1 (https=) * 1992-10-28 1993-09-02 Schott Glaswerke, 55122 Mainz, De
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JP3115134B2 (ja) * 1992-11-27 2000-12-04 松下電器産業株式会社 薄膜処理装置および薄膜処理方法
US5427625A (en) * 1992-12-18 1995-06-27 Tokyo Electron Kabushiki Kaisha Method for cleaning heat treatment processing apparatus
US5520969A (en) * 1994-02-04 1996-05-28 Applied Materials, Inc. Method for in-situ liquid flow rate estimation and verification
JP3122311B2 (ja) * 1994-06-29 2001-01-09 東京エレクトロン株式会社 成膜処理室への液体材料供給装置及びその使用方法
JP3373057B2 (ja) * 1994-07-29 2003-02-04 エヌオーケー株式会社 水素分離膜の製造法
US5648113A (en) * 1994-09-30 1997-07-15 International Business Machines Corporation Aluminum oxide LPCVD system
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
DE19735399C2 (de) * 1997-08-14 2002-01-17 Infineon Technologies Ag Gasleitungssystem für einen Prozeßreaktor, insbesondere Vertikalofen, zur Behandlung von Wafern und Verfahren zur Behandlung von Wafern in einem Prozeßreaktor
US6635114B2 (en) * 1999-12-17 2003-10-21 Applied Material, Inc. High temperature filter for CVD apparatus
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
DE10061828B4 (de) * 2000-12-12 2011-03-31 Plasmatreat Gmbh Verfahren zum Einbringen von Material in einen Plasmastrahl und Plasmadüse zur Durchführung des Verfahrens
KR100438942B1 (ko) * 2001-10-12 2004-07-03 주식회사 엘지이아이 플라즈마를 이용한 금속의 내부식처리방법
JP3826072B2 (ja) * 2002-06-03 2006-09-27 アドバンスド エナジー ジャパン株式会社 液体材料気化供給装置
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
DE20314411U1 (de) * 2003-09-15 2005-01-20 Viessmann Werke Gmbh & Co Kg Apparat zur Erzeugung von Wasserstoff
FR2868434B1 (fr) * 2004-04-06 2007-04-20 Neyco Sa Procedes de revetement d'un substrat et de formation d'un film colore et dispositif associe
US7993700B2 (en) * 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
US10541157B2 (en) 2007-05-18 2020-01-21 Brooks Automation, Inc. Load lock fast pump vent
WO2008144670A1 (en) 2007-05-18 2008-11-27 Brooks Automation, Inc. Load lock fast pump vent
JP5372353B2 (ja) * 2007-09-25 2013-12-18 株式会社フジキン 半導体製造装置用ガス供給装置
DE102007062977B4 (de) * 2007-12-21 2018-07-19 Schott Ag Verfahren zur Herstellung von Prozessgasen für die Dampfphasenabscheidung
DE102008037160A1 (de) 2008-08-08 2010-02-11 Krones Ag Versorgungsvorrichtung
JP5083285B2 (ja) * 2009-08-24 2012-11-28 東京エレクトロン株式会社 疎水化処理装置、疎水化処理方法及び記憶媒体
DE102009049839B4 (de) * 2009-10-16 2012-12-06 Calyxo Gmbh Gasverdampfer für Beschichtungsanlagen sowie Verfahren zu dessen Betreiben
US9423185B2 (en) * 2009-11-04 2016-08-23 Toshiba Mitsubishi-Electric Industrial Systems Corporation Heat transfer device
DE102012203212B4 (de) * 2012-03-01 2025-02-27 Osram Oled Gmbh Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses
US11393703B2 (en) 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
KR102854551B1 (ko) * 2018-11-28 2025-09-03 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 증기 챔버를 포함하는 페데스탈

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GB672097A (https=) *
US3288556A (en) * 1966-11-29 Weber iii dispenser
US2472992A (en) * 1949-06-14 Evaporator for therapeutic
DE1134566B (de) * 1957-02-13 1962-08-09 Siemens Ag Vorrichtung zum Herstellen von Isolierstoff-baendern durch Bedampfen mit Metall unter Anwendung einer oertlich begrenzten Vorbedampfung mit kondensations-hindernden Stoffen
NL6713713A (https=) * 1967-10-10 1969-04-14
US3875926A (en) * 1974-02-21 1975-04-08 Matthew William Frank Solar thermal energy collection system
JPS6218042A (ja) * 1985-06-24 1987-01-27 サ−ムコ・システムス・インコ−ポレ−テツド 気化された液体反応体からの二酸化ケイ素の低圧化学蒸着法
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
FR2595052B1 (fr) * 1986-03-03 1990-06-01 Armines Procede et dispositif de vaporisation rapide d'un liquide
DE3683039D1 (de) * 1986-04-04 1992-01-30 Ibm Deutschland Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten.
DE3632027C1 (de) * 1986-09-20 1988-02-18 Rudnay Andre Dr De Verfahren und Vakuumbedampfungsanlage zum Metallisieren von Folienoberflaechen
US4892753A (en) * 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
JPS63199423A (ja) * 1987-02-16 1988-08-17 Toshiba Corp 半導体基板表面処理方法

Also Published As

Publication number Publication date
DE3833232C2 (https=) 1991-05-23
DE3833232A1 (de) 1990-04-05
JPH02213478A (ja) 1990-08-24
KR900004370A (ko) 1990-04-12
DE58900138D1 (de) 1991-07-11
US4947789A (en) 1990-08-14
EP0361171A1 (de) 1990-04-04
US5069930A (en) 1991-12-03
EP0361171B1 (de) 1991-06-05

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