KR940002031A - 칩 캐리어 - Google Patents

칩 캐리어 Download PDF

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KR940002031A
KR940002031A KR1019930011870A KR930011870A KR940002031A KR 940002031 A KR940002031 A KR 940002031A KR 1019930011870 A KR1019930011870 A KR 1019930011870A KR 930011870 A KR930011870 A KR 930011870A KR 940002031 A KR940002031 A KR 940002031A
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chip carrier
sealant
composition
chip
encapsulant
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KR1019930011870A
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KR960015924B1 (ko
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다이안 프레이 브렌다
아놀드 조셉 찰스
죤 올셰프스키 프란시스
워렌 윌슨 제임스
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죤 디. 크레인
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR940002031A publication Critical patent/KR940002031A/ko
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Publication of KR960015924B1 publication Critical patent/KR960015924B1/ko

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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
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Abstract

본 발명은 칩 캐리어 기판과, 땜납 덩어리를 거쳐서 이 기판의 표면상에 플립 칩 구조로 고정된 적어도 하나의 반도체 칩을 구비하는 칩 캐리어를 개시한다. 이 땜납 덩어리는 에폭시 함유 조성물을 갖는 제1밀봉재내에 밀봉된다. 또한, 회로 표면상의 회로중 적어도 일부분은 우레탄 함유 조성물을 갖는 제2 밀봉재내에 밀봉되며, 그 조성물은 제2밀봉재가 약 10,000psi 이하의 탄성율을 나타내도록 선택된다. 결과적으로, 제2밀봉재는 칩 캐리어와의 반복가열시험 후 내부의 균열도 나타내지 않고 제1밀봉재와의 접촉면 영역에도 균열을 나타내지 않으며, 회로 배치표면으로부터 제2밀봉재의 박리도 나타내지 않는다.

Description

칩 캐리어
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 회로 배치 표면(circuitized surface)중 적어도 일부를 덮는 보호용 피막(protective coating)을 구비하는 본 발명에 따른 칩 캐리어(chip carrier)의 바람직한 실시예에 대한 단면도.

Claims (6)

  1. 전기회로가 형성된 표면을 갖는 기판과; 에폭시 함유 조성물을 갖는 제1밀봉재에 의해서 부분적으로 밀봉된 전기전도성 땜납 덩어리를 경유해서 상기 표면상에 고정되는 것으로서, 상기 제1밀봉재의 열팽창계수가 상기 땜납 덩어리의 열팽창계수의 30% 이내로 된 적어도 하나의 반도체 칩과; 상기 기판 표면상에 형성된 상기 전기회로의 적어도 일부분을 덮어서 밀봉하며 상기 제1밀봉재의 적어도 일부분과 접촉하여 부분적으로 둘러싸는 제2밀봉재를 포함하는 칩 캐리어(chip carrier)에 있어서, 상기 제2밀봉재는 우레탄 함유조성물을 가지며, 상기 조성물은 상기 제2밀봉재가 25℃에서 약 10,000psi 이하의 탄성율을 나타낼 수 있도록 선택하는 것을 특징으로 하는 칩 캐리어.
  2. 제1항에 있어서, 상기 제2밀봉재의 조성물은, 상기 칩 캐리어에 매시간당 3사이클의 주기로 약 2,000사이클 동안 0℃로부터 100℃까지의 반복가열을 행한 후 10x 광학 현미경으로 관찰하였을때 내부균열도 나타나지 않고 접촉면의 균열도 없는 것으로 선택한 칩 캐리어.
  3. 제1항에 있어서, 상기 제2밀봉재의 조성물은, 상기 칩 캐리어에 매시간당 1사이클의 주기로 -40℃로부터 +65℃로의 가열시험을 10회 반복한 후 10x 광학 현미경으로 검사하였을때 상기 기판으로부터 박리현상도 없고 균열도 나타내지 않도록 선택한 칩 캐리어.
  4. 제1항에 있어서, 상기 제2밀봉재는 적어도 하나의 상기 반도체 칩의 상측 노출 표면중 적어도 일부분을 덮어서 밀봉하는 칩 캐리어.
  5. 제1항에 있어서, 상기 제2밀봉재는 자외선 경화된 밀봉재인 칩 캐리어.
  6. 제1항에 있어서, 상기 적어도 하나의 반도체 칩의 상측 노출표면에 직접 부착된 히트싱크(heat sink)를 추가로 포함하는 칩 캐리어.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930011870A 1992-07-06 1993-06-28 칩 캐리어 KR960015924B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP92-196072 1992-06-29
US07/909,368 US5249101A (en) 1992-07-06 1992-07-06 Chip carrier with protective coating for circuitized surface
JP909,368 1992-07-06
US909,368 1992-07-06

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Publication Number Publication Date
KR940002031A true KR940002031A (ko) 1994-02-16
KR960015924B1 KR960015924B1 (ko) 1996-11-23

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US (1) US5249101A (ko)
EP (1) EP0578307B1 (ko)
JP (1) JP2501287B2 (ko)
KR (1) KR960015924B1 (ko)
CN (1) CN1028937C (ko)
AT (1) ATE143529T1 (ko)
CA (1) CA2091910C (ko)
DE (1) DE69305012T2 (ko)
ES (1) ES2092216T3 (ko)
MY (1) MY108750A (ko)
SG (1) SG44362A1 (ko)
TW (1) TW230272B (ko)

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KR960015924B1 (ko) 1996-11-23
EP0578307A2 (en) 1994-01-12
MY108750A (en) 1996-11-30
CA2091910C (en) 1996-07-30
JPH0697309A (ja) 1994-04-08
CN1081787A (zh) 1994-02-09
SG44362A1 (en) 1997-12-19
ES2092216T3 (es) 1996-11-16
EP0578307B1 (en) 1996-09-25
DE69305012D1 (de) 1996-10-31
JP2501287B2 (ja) 1996-05-29
ATE143529T1 (de) 1996-10-15
US5249101A (en) 1993-09-28
TW230272B (ko) 1994-09-11
EP0578307A3 (en) 1994-08-24
CA2091910A1 (en) 1994-01-07
CN1028937C (zh) 1995-06-14
DE69305012T2 (de) 1997-04-03

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