KR930024092A - 이온주입장치 - Google Patents

이온주입장치 Download PDF

Info

Publication number
KR930024092A
KR930024092A KR1019930007549A KR930007549A KR930024092A KR 930024092 A KR930024092 A KR 930024092A KR 1019930007549 A KR1019930007549 A KR 1019930007549A KR 930007549 A KR930007549 A KR 930007549A KR 930024092 A KR930024092 A KR 930024092A
Authority
KR
South Korea
Prior art keywords
ion
injection device
mass
ion injection
ion beam
Prior art date
Application number
KR1019930007549A
Other languages
English (en)
Other versions
KR100286089B1 (ko
Inventor
히데끼 기무라
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR930024092A publication Critical patent/KR930024092A/ko
Application granted granted Critical
Publication of KR100286089B1 publication Critical patent/KR100286089B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

금속오염을 발생시키지 않는 이온주입장치를 저코스트로 실현한다. 질량분석부를 구성하는 챔버(14)의 내벽에 실리콘판(25)을 덮은 구조로 함으로써, 이온빔에 의한 금속의 스퍼터를 방지하고, 웨이퍼의 금속오염을 방지한다. 그러므로 웨이퍼에 형성되는 트랜지스터의 리크전류를 저감하는 것이 가능하게 된다.

Description

이온주입장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예의 평면도. 제2도는 제1도의 A-A 단면도. 제4도는 웨이퍼의 깊이와 이온농도와의 관계를 도시한 그래프.

Claims (1)

  1. 이온원(源)과, 이 이온원으로부터 인출된 이온중 소정의 질량의 이온을 취출하는 질량분석부와, 이 질량분석부로부터의 이온빔을 가속하는 가속부와, 이 가속부에서 가속된 이온빔을 X,Y방향으로 주사하는 주사부를 구비한 이온주입장치에 있어서, 상기 질량분석부의 내벽을 실리콘판으로 덮은 것을 특징으로 하는 이온주입장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930007549A 1992-05-21 1993-05-03 이온주입장치 KR100286089B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-128,372 1992-05-21
JP4128372A JPH05325874A (ja) 1992-05-21 1992-05-21 イオン注入装置

Publications (2)

Publication Number Publication Date
KR930024092A true KR930024092A (ko) 1993-12-21
KR100286089B1 KR100286089B1 (ko) 2001-05-02

Family

ID=14983199

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930007549A KR100286089B1 (ko) 1992-05-21 1993-05-03 이온주입장치

Country Status (3)

Country Link
US (1) US5396076A (ko)
JP (1) JPH05325874A (ko)
KR (1) KR100286089B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19618734C2 (de) * 1996-01-23 1999-08-26 Fraunhofer Ges Forschung Ionenquelle für eine Ionenstrahlanlage
EP0876677B1 (de) * 1996-01-23 1999-07-21 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Ionenquelle für eine ionenstrahlanlage
US5947053A (en) * 1998-01-09 1999-09-07 International Business Machines Corporation Wear-through detector for multilayered parts and methods of using same
JPH11260309A (ja) * 1998-03-13 1999-09-24 Hitachi Ltd イオン注入装置
US6259105B1 (en) * 1999-05-10 2001-07-10 Axcelis Technologies, Inc. System and method for cleaning silicon-coated surfaces in an ion implanter
JP3440329B2 (ja) * 1999-08-05 2003-08-25 住友イートンノバ株式会社 コーティング膜の検出方法及びこれを用いるイオン注入装置
US7378670B2 (en) * 2001-06-22 2008-05-27 Toyo Tanso Co., Ltd. Shielding assembly for a semiconductor manufacturing apparatus and method of using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405855A3 (en) * 1989-06-30 1991-10-16 Hitachi, Ltd. Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus

Also Published As

Publication number Publication date
KR100286089B1 (ko) 2001-05-02
US5396076A (en) 1995-03-07
JPH05325874A (ja) 1993-12-10

Similar Documents

Publication Publication Date Title
KR910007080A (ko) 이온 주입장치
US7230234B2 (en) Orthogonal acceleration time-of-flight mass spectrometer
KR920013626A (ko) 이온 주입 방법
KR940022125A (ko) 포커스 이온빔 장치 및 방법
CA2192915A1 (en) Electrospray and atmospheric pressure chemical ionization mass spectrometer and ion source
KR960009822A (ko) 대전방지방법 및 대전방지용 이온 빔장치
KR870004493A (ko) 이온 원(源)
GB2309580A (en) Method and apparatus for plasma mass analysis with reduced space charge effects
KR930024092A (ko) 이온주입장치
KR970052183A (ko) 이온 빔 각도 조정이 가능한 이온 주입기
KR900013563A (ko) 전자비임 여기(勵起) 이온 원(源)
KR970052139A (ko) 양 이온과 음 이온 주입에 공동으로 사용하는 이온 주입장치 및 방법
JPH04363849A (ja) 電子ビーム装置
ATE279783T1 (de) Flugzeitmassenspektrometerionenquelle zur analyse von gasproben
KR940008817A (ko) Ecr 플라즈마 가공방법
KR970013018A (ko) 불순물의 도입방법
KR920013624A (ko) 이온 주입기 및 그를 통한 이온 주입 방법
JPS5832200Y2 (ja) イオン源装置
JP2544034B2 (ja) 二次イオン質量分析法及び二次イオン質量分析装置
KR200162274Y1 (ko) 플라즈마 증착장치
JPH0731996B2 (ja) イオン注入装置
JPH06111755A (ja) イオン注入装置
DE60126901D1 (de) Massenspektrometer und massenspektrometrisches Verfahren
GB2202368A (en) Sample-holder for mass spectrometer
SU801141A1 (ru) Квадрупольный трехмерный масс- СпЕКТРОМЕТР и СпОСОб ЕгО изгО-ТОВлЕНи

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee