KR930018790A - 반도체 레이저 제작 방법 - Google Patents

반도체 레이저 제작 방법 Download PDF

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Publication number
KR930018790A
KR930018790A KR1019920002120A KR920002120A KR930018790A KR 930018790 A KR930018790 A KR 930018790A KR 1019920002120 A KR1019920002120 A KR 1019920002120A KR 920002120 A KR920002120 A KR 920002120A KR 930018790 A KR930018790 A KR 930018790A
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KR
South Korea
Prior art keywords
layer
conductive
gaas
semiconductor laser
photolithography process
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Application number
KR1019920002120A
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English (en)
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KR950002206B1 (ko
Inventor
시상기
조명환
Original Assignee
이헌조
주식회사 금성사
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Priority to KR1019920002120A priority Critical patent/KR950002206B1/ko
Publication of KR930018790A publication Critical patent/KR930018790A/ko
Application granted granted Critical
Publication of KR950002206B1 publication Critical patent/KR950002206B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저 제작 방법에 관한 것으로 종래에는 기판위에 화합물을 1차 성장시킨 후 사진 식각공정을 통해 스트립 용역을 형성하여 알루미늄 성분이 사진 식각공정때의 노출로 산화되며 또한 2차성장의 화합물에 의해 오염되어 소자의 특성을 저하시키는 문제점이 있었다.
상기와 같은 문제점을 감안한 본 발명은 1차성장시에 산화 방지층과 선택 에칭층을 성장시켜 사진 식각공정시 알루미늄의 산화 방지 및 2차성장으로 인한 미립자의 오염을 방지하여 소자의 특성을 향상시키는 효과가 있다.

Description

반도체 레이저 제작 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도의 (가) 내지 (라)는 종래의 반도체 레이저 제조 공정도.
제2도의 (가) 내지 (마)는 본 발명의 반도체 레이저 제조 공정도.

Claims (2)

  1. 제1도 전형 GaAs기판(1)위에 제1도전형 GaAs버퍼층(2)과 제1도전형 AlGaAs층(3)과 비로팅 AlGaAs층(4) 및 제2도전형 AlGaAs층(5) 및 산화 방지층(5-1) 과 선택 에칭층(5-2) 및 제1도전형 GaAs 전류차단층(6)을 연속 성장시킨 후 사진식각공정으로 상기 제1 도전형 GaAs 전류차단층(6)과 선택에칭층(5-2)을 선택적 에칭한 후 스트립 영역(7)을 형성하고 상기 제1도전형 GaAs 전류차단층(6)위에 제2도전형 AlGaAs층(8) 및 제2도전형 GaAs층(9)을 성장시킨 후 상기 제1도전형 GaAs기판(1)과 제2도전형 GaAs(9)에 전극 (10)(11)을 형성하여 제작하는 반도체 레이저 제작 방법.
  2. 제1항에 있어서, 상기 산화방지층(5-1)과 선택 에칭층(5-2)을 아연이 도핑된 GaAs을 100Å이하와 비로팅 Al0.3GaAs을 100Å이하로 성장하여 제작하는 반도체 레이저 제작 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920002120A 1992-02-13 1992-02-13 반도체 레이저 제조 방법 KR950002206B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920002120A KR950002206B1 (ko) 1992-02-13 1992-02-13 반도체 레이저 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920002120A KR950002206B1 (ko) 1992-02-13 1992-02-13 반도체 레이저 제조 방법

Publications (2)

Publication Number Publication Date
KR930018790A true KR930018790A (ko) 1993-09-22
KR950002206B1 KR950002206B1 (ko) 1995-03-14

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ID=19328933

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920002120A KR950002206B1 (ko) 1992-02-13 1992-02-13 반도체 레이저 제조 방법

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KR (1) KR950002206B1 (ko)

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Publication number Publication date
KR950002206B1 (ko) 1995-03-14

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