KR930015107A - 쇼트키 다이오드 구조 및 그 제조방법 - Google Patents

쇼트키 다이오드 구조 및 그 제조방법 Download PDF

Info

Publication number
KR930015107A
KR930015107A KR1019920015292A KR920015292A KR930015107A KR 930015107 A KR930015107 A KR 930015107A KR 1019920015292 A KR1019920015292 A KR 1019920015292A KR 920015292 A KR920015292 A KR 920015292A KR 930015107 A KR930015107 A KR 930015107A
Authority
KR
South Korea
Prior art keywords
diode
ohmic contact
mask
well
junction
Prior art date
Application number
KR1019920015292A
Other languages
English (en)
Inventor
제이. 로빈슨 머레이
씨. 조이스 크리스토퍼
팀와룩
Original Assignee
존 엠. 클락
내쇼날 세미컨덕터 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 존 엠. 클락, 내쇼날 세미컨덕터 코포레이션 filed Critical 존 엠. 클락
Publication of KR930015107A publication Critical patent/KR930015107A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664—Vertical bipolar transistor in combination with diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/917—Plural dopants of same conductivity type in same region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

개선된 쇼트키 다이오드 구조(4)는, 인 원자가 바람직한 비교적 빠르게 확산하는 원자의 N+농도를 역행확산함으로써 형성되어, 상기 다이오드에 대한 다이오드 기판으로서 국부화된 다이오드 N웰(6)을 형성한다. 안티몬 원자가 바람직한 비교적 느리게 확산하는 N형 원자로 형성된 매몰된 다이오드 층(5)은 상기 다이오드 N웰 하부에 배치되어 있으며 다이오드오옴 접점(9)에 다이오드 접합부분(7)을 전기적으로 연결시킨다. 다이오드 오옴 접점영역(31)은 상기 오옴 접점하부에 배치되어 있으며, 또한 상기 오옴접점에 다이오드 접합부분을 연결시킨다. 바람작하게는, 상기 다이오드 접합 부분은 플래티늄-실리사이드 접합부분이다. 상기 개선된 쇼트키 다이오드 구조는 BICMOS 집적회로 제조공정의 일부로서 형성될 수 있으며, 이 경우에는 상기 매몰된 다이오층이 바이폴라 트랜지스터 구조의 매몰된 콜렉터층과 동시에 형성될 수 있으며, 상기 다이오드 N웰은 CMOS 트랜지스터 구조의 N웰과 동시에 형성될 수 있고, 상기 다이오드 오옴 접점 영역은 콜렉터 싱크 영역과 동시에 형성될 수 있다. 상기 BICMOS 제조공정에서는 상기 매몰된 콜렉터 층 한정 마스크가 또한 매몰된 다이오드 층 한정 마스크이며, 역행 N웰 한정 마스크가 또한 다이오드 N웰 한정 마스크이고, 콜렉터 싱크 한정 마스크가 또한 다이오드 오옴 접점 영역 한정마스크이며, 상기 BICMOS 접점 한정 마스크가 또한 다이오드 접합부분 및 오옴 접점 한정 마스크이다.

Description

쇼트키 다이오드 구조 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 개선된 BICMOS 집적회로의 모든 표면상의 티타늄/텅스텐(Ti/w) 및 알루미늄/구리(Al/Cu) 블랭킷 데포지션의 금속 1데포지션 순서를 간단히 도시한 평면도,
제7도는 접점 영역상의 포토레지스트 마스크와 개선된 쇼트키 다이오드 구조에 대한 신규한 금속 1다이오드 한정 접점을 지닌 신규한 15.0 금속 1한정 마스크의 일부를 보여주는 BICMOS 제조 공정의 15.0 마스크 및 에칭 순서를 간단히 도시한 평면도,
제8도는 접점 영역상에 포토레지스트 마스크를 지니지 않고서도 리드(lead)선이 그들 영역으로부터 연장되어 있는 것으로, 제7도에 예시된 15.0 금속 1 한정 마스크를 간단히 도시한 평면도.

Claims (1)

  1. 기판상에 데포지트된 반도체 재료의 에피택셜층의 표면에 형성된 오옴접점 및 다이오드 접합부분을 포함하며, 상기 오옴접점에 상기 다이오드 접합부분을 전기적으로 연결시키고 상기 다이오드 접합부분 하부에 배치되어 있는 N형 원자의 다이오드 N웰을 포함하며, 상기 N형 원자가 역행 농도로 상기 기판으로부터 상부로 분포되어 있는 쇼트키 다이오드 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920015292A 1991-12-06 1992-08-25 쇼트키 다이오드 구조 및 그 제조방법 KR930015107A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91-803214 1991-12-06
US07/803,214 US5150177A (en) 1991-12-06 1991-12-06 Schottky diode structure with localized diode well

Publications (1)

Publication Number Publication Date
KR930015107A true KR930015107A (ko) 1993-07-23

Family

ID=25185915

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920015292A KR930015107A (ko) 1991-12-06 1992-08-25 쇼트키 다이오드 구조 및 그 제조방법

Country Status (5)

Country Link
US (1) US5150177A (ko)
EP (1) EP0545521B1 (ko)
JP (1) JPH05259438A (ko)
KR (1) KR930015107A (ko)
DE (1) DE69231272T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326710A (en) * 1992-09-10 1994-07-05 National Semiconductor Corporation Process for fabricating lateral PNP transistor structure and BICMOS IC
US5614755A (en) * 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US5889315A (en) * 1994-08-18 1999-03-30 National Semiconductor Corporation Semiconductor structure having two levels of buried regions
US6445014B1 (en) 1999-06-16 2002-09-03 Micron Technology Inc. Retrograde well structure for a CMOS imager
US6310366B1 (en) 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6261932B1 (en) 1999-07-29 2001-07-17 Fairchild Semiconductor Corp. Method of fabricating Schottky diode and related structure
US20060076639A1 (en) * 2004-10-13 2006-04-13 Lypen William J Schottky diodes and methods of making the same
US10050157B2 (en) * 2005-07-01 2018-08-14 Texas Instruments Incorporated Spike implanted Schottky diode
US8759194B2 (en) 2012-04-25 2014-06-24 International Business Machines Corporation Device structures compatible with fin-type field-effect transistor technologies

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
JPS55141763A (en) * 1979-04-23 1980-11-05 Hitachi Ltd Schottky barrier diode and fabricating method of the same
JPS5712564A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JPS58123754A (ja) * 1982-01-20 1983-07-23 Hitachi Ltd 半導体装置の製造法
JPS59177960A (ja) * 1983-03-28 1984-10-08 Hitachi Ltd 半導体装置およびその製造方法
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
JPS60154681A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 半導体装置およびその製造方法
US4604790A (en) * 1985-04-01 1986-08-12 Advanced Micro Devices, Inc. Method of fabricating integrated circuit structure having CMOS and bipolar devices
EP0213425B1 (de) * 1985-08-26 1992-05-06 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik mit einem Substratvorspannungs-Generator und einer Schottky-Diode
JPS6281120A (ja) * 1985-10-03 1987-04-14 Fujitsu Ltd 半導体装置
US4752813A (en) * 1986-08-08 1988-06-21 International Business Machines Corporation Schottky diode and ohmic contact metallurgy
JPH0194659A (ja) * 1987-10-05 1989-04-13 Nec Corp バイポーラ型半導体集積回路装置

Also Published As

Publication number Publication date
EP0545521A2 (en) 1993-06-09
JPH05259438A (ja) 1993-10-08
US5150177A (en) 1992-09-22
EP0545521B1 (en) 2000-07-19
DE69231272D1 (de) 2000-08-24
DE69231272T2 (de) 2001-03-15
EP0545521A3 (en) 1994-08-24

Similar Documents

Publication Publication Date Title
KR100307277B1 (ko) 전자광학집적회로및그제조방법
US3430110A (en) Monolithic integrated circuits with a plurality of isolation zones
US4281448A (en) Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
US4278985A (en) Monolithic integrated circuit structure incorporating Schottky contact diode bridge rectifier
JPS6358380B2 (ko)
JPS6342168A (ja) バイポーラ半導体装置
KR930015107A (ko) 쇼트키 다이오드 구조 및 그 제조방법
US3441815A (en) Semiconductor structures for integrated circuitry and method of making the same
US3449825A (en) Fabrication of semiconductor devices
KR970077615A (ko) 고주파 특성을 가진 GaAs 기판위에 쇼트키 장벽 다이오드를 만드는 방법
IE822570L (en) Semiconductor device and method of manufacturing the same
US3436279A (en) Process of making a transistor with an inverted structure
JPH0360149A (ja) ダイオードより成るｖｄｍｏｓ／論理集積回路
KR940008111A (ko) 역행 n웰 캐소드 쇼트키 트랜지스터 및 이를 제조하는 방법
US3364399A (en) Array of transistors having a layer of soft metal film for dividing
US3659156A (en) Semiconductor device
GB1262544A (en) Metallic contact and interconnection system for semiconductor devices
JPS60170979A (ja) 半導体集積回路の製造方法
US4249192A (en) Monolithic integrated semiconductor diode arrangement
JPH0622998Y2 (ja) 半導体装置
JPH0654794B2 (ja) 半導体集積回路
JPH0110938Y2 (ko)
JPH04365378A (ja) 半導体集積回路
KR930007586Y1 (ko) 타이타늄 실리사이드를 이용한 다층 금속층 구조
US3521134A (en) Semiconductor connection apparatus

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid